VS5V0BB1ES_Datasheet_Rev1.2
VS5V0BB1ES
Diode
Bi Directional ESD Protection Diode
VS5V0BB1ES
●Description
●Features
The VS5V0BB1ES is designed to protect sensitive 1)Ultra small Silicon package.
electronics devices from the damage of ESD.
2)Bi directional ESD protection of one line It is birectional TVS, therefore it protects the electronics 3)ESD protection level ±8kV from positive and negative surge voltage.
(IEC61000-4-2 Contact)
It may be used to meet ESD immunity requirements of IEC61000-4-2, LEVEL 4(Air ±15kV, Contact ±8kV).
The VS5V0BB1ES is in a silicon package.●Applications
Its size is 0.6 X 0.3 X 0.28mm.
?Cellular handsets and accessories Ultra small package gives the the designer ?Portable electronics the flexibillity and the possibility of ?Data lines
high density circuit design.
?Audio and Video equipment
The VS5V0BB1ES is used in portable devises,such as cellular phone, degital camera, audio and video equipment.
●Outline dimensions（Unit : mm）●Circuit Diagram
Rev1.2
0.6±0.01
0.30±0.01
VS5V0BB1ES
Diode
●Absolute maximum ratings （Ta=25℃）
●Electical Characteristics（Ta=25℃,Rating of per diode）
Rev1.2
●Characteristics
110
1
234
5
C a p a c i t a n c e B e t w e e n T e r m i n a l s :C t (p F )
Reverse Voltage: VR(V) VR-Ct Characteristics
f=1MHz
20
40
60
80
100
120
25
50
75100
125
150
% o f R a t e d P o w e r o r I p p
Ta (℃)
Power Derating Curve
05
10
15
0.5
1
1.5
2
2.5
3
C l a m p i n g V o l t a g e V C L (V )
Peak Pulse Current : Ipp(A)
Clamping Voltage vs Peak Pulse Current
110
100
0.01
0.1
1
10
R e v e r s e S u r g e M a x i m u m P o w e r : P R S M (W )
pulse time:t (ms)
PRSM-t Characteristics
Non-repective Square wave pulse Mounted on grass epoxy board
tp=8/20us
‐20020406080100120140-100
100
200
300
400
E S D C l a m p i n g V o l t a g e V C L (V )
Time(ns)
ESD Clamping Voltage
(IEC61000-4-2 +8kV Contact )
‐20
020406080100120140-20
20
4060
80
100
E S D C l a m p i n g V o l t a g e V C L (V )
Time(ns)
ESD Clamping Voltage
(IEC61000-4-2 +8kV Contact )
●Application information
The device is designed for the protection of one bidirectional data or signal line from surge pulses and ESD damage. The device is bidirectional and may be used on lines where the signal polarity is positive and negative.
line to be protected Circuit board layout and protection device placement
The following guidelines are recommended:
?Place the device as close to the input terminal or connector as possible.
?Minimize the path length between the device and the protected line.
?Minimize the length of the transient return path to ground.
?Use ground planes whenever possible.
?Minimize all Printed-Circuit Board conductive loops including power and ground loops.GND
● Outline
unit(mm)
● Refferencial Land Pattern
Y
X
C
● Marking Code
There is dot on the package which tells production year,
week and its product manufacture.
「BB」is the sign which shows VS5V0BB1ES.
● Ordering information
T15R15,000pcs/reel
● Taping Information
8/20us Pulse waveform
ESD pulse waveform(IEC61000-4-2)Diagram of ESD test
Spec of IEC61000-4-2
0204060801001200
10
20
30
I p p (%)t(us)
30ns
100%
30ns I@60ns Ipeak
0.7～1.0ns
C=150pF
R=330Ω
X10
ATTENUATOR
Oscilloscope
ESD TESTER
50ΩCable
VS5V0BB1ES
50Ω
Procedure to obtain ESD Clampimg Voltage
1.Set up ESD Tester at IEC61000-4-2 condition.(C=150pF, R=330Ω)
2.Mount a sample on the high frequency test board with the SMA connector.
3.Connect the SMA connector to the oscilloscope by 50?cable.
Then, add the 10X-attenuator between test board and the cable to protect the oscilloscope.
4.Discharge ESD in contact discharge mode at any voltage.(normally 8kV Max.)
Sample