BD贴片三极管印字

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

BCW61 TRANSISTOR (PNP)

FEATURES

z Low current

z Low voltage

z General Purpose Transistor

MARKING: BCW61A: BA

BCW61B: BB

BCW61C: BC

BCW61D: BD

MAXIMUM RATINGS (T a =25℃ unless otherwise noted)

Symbol Parameter Value Unit V CBO Collector-Base Voltage -32 V

V CEO Collector-Emitter Voltage -32 V

V EBO Emitter-Base Voltage -5 V

I C Collector Current -100 mA

P C Collector Power Dissipation 250 mW

R ΘJA Thermal Resistance From Junction To Ambient 500 ℃/W

T j Junction Temperature 150 ℃

T stg Storage Temperature -55～+150℃

ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter

Symbol Test conditions Min Typ Max

Unit Collector-base breakdown voltage

V (BR)CBO I C =-10μA, I E =0 -32 V Collector-emitter breakdown voltage

V (BR)CEO I C =-1mA, I B =0 -32 V Emitter-base breakdown voltage

V (BR)EBO I E =-10μA, I C =0 -5 V Collector cut-off current

I CBO V CB =-32V, I E =0 -0.02 μA Emitter cut-off current I EBO V EB =-4V, I C =0 -0.02 μA BCW61B 30

BCW61C 40

h FE(1) V CE =-5V, I C =-10μA BCW61D 100 BCW61A 120 220

BCW61B 180 310

BCW61C 250 460 h FE(2) V CE =-5V, I C =-2mA BCW61D 380 630 BCW61A 60

BCW61B 80

BCW61C 100

DC current gain h FE(3) V CE =-1V, I C =-50mA BCW61D 110

I C =-10mA, I B =-0.25mA -60

-250 mV Collector-emitter saturation voltage V CE(sat) I C =-50mA, I B =-1.25mA -120

-550 mV I C =-10mA, I B =-0.25mA -0.6

-0.85 V Base-emitter saturation voltage

V BE(sat) I C =-50mA, I B =-1.25mA -0.68

-1.05 V Base-emitter voltage

V BE V CE =-5V, I C =

-2mA -0.6 -0.75 V Transition frequency

f T V CE =-5V,I C =-10mA, f=100MHz 100 MHz Collector output capacitance

C ob V CB =-10V, I E =0, f=1MHz 4.5 pF Emitter input capacitance C ib V EB =-0.5V, I C =0, f=1MHz 11 pF

https://www.360docs.net/doc/0818822378.html, 【南京南山半导体有限公司 — 长电三极管选型资料】

The bottom gasket

The top gasket

3000×1 PCS 3000×15 PCS Label on the Reel QA Label Seal the box

with the tape Seal the box

with the tape Stamp “EMPTY”

on the empty box

贴片三极管上的印字与真实型号对照手册

贴片三极管上的印字与真实名称的对照表印字器件厂商类型封装器件用途及参数 -28 PDTA114WU Phi N SOT323 pnp dtr -24 PDTC114TU Phi N SOT323 npn dtr R1 10k -23 PDTA114TU Phi N SOT323 pnp dtr R1 10k -20 PDTC114WU Phi N SOT323 npn dtr -6 PMSS3906 Phi N SOT323 2N3906 -4 PMSS3904 Phi N SOT323 2N3904 0 2SC3603 Nec CX SOT173 Npn RF fT 7GHz 1 Gali-1 MC AZ SOT89 DC-8GHz MMIC amp 12dB gain 1 2SC3587 Nec CX - npn RF fT10GHz 1 BA277 Phi I SOD523 VHF Tuner band switch diode 2 BST82 Phi M - n-ch mosfet 80V 175mA 2 MRF5711L Mot X SOT14 3 npn RF MRF571 2 DTCC114T Roh N - 50V 100mA npn sw + 10k base res 2 Gali-2 MC AZ SOT89 DC-8GHz MMIC amp 16dB gain 2 BAT62-02W Sie I SCD80 BAT16 schottky diode 2 2SC3604 Nec CX - npn RF fT8GHz 12dB@2GHz 3 Gali-3 MC AZ SOT89 DC-3GHz MMIC amp 22dB gain 3 DTC143TE Roh N EMT3 npn dtr R1 4k7 50V 100mA 3 DTC143TUA Roh N SC70 npn dtr R1 4k7 50V 100mA 3 DTC143TKA Roh N SC59 npn dtr R1 4k7 50V 100mA 3 BAT60A Sie I SOD323 10V 3A sw schottky 3 BAT62-02W Sie I SCD80 - 4 DTC114TCA Roh N SOT23 npn dtr R1 10k 50V 100mA 4 DTC114TE Roh N EMT3 npn dtr R1 10k 50V 100mA 4 DTC114TUA Roh N SC70 npn dtr R1 10k 50V 100mA 4 DTC114TKA Roh N SC59 npn dtr R1 10k 50V 100mA 4 MRF5211L Mot X SOT143 pnp RF MRF521 4 Gali-4 MC AZ SOT89 DC-4GHz MMIC amp 17. 5 dBm 4 BB664 Sie I SCD80 Varicap 42-2.5pF 5 SSTPAD5 Sil J - PAD-5 5pA leakage diode 5 Gali-4 MC AZ SOT89 DC-4GHz MMIC amp 18 dBm o/p 5 DTC124TE Roh N EMT3 npn dtr R1 22k 50V 100mA 5 DTC124TUA Roh N SC70 npn dtr R1 22k 50V 100mA 5 DTC124TKA Roh N SC59 npn dtr R1 22k 50V 100mA 6 Gali-6 MC AZ SOT89 DC-4GHz MMIC amp 115 dBm o/p 6 DTC144TE Roh N EMT3 npn dtr R1 47k 50V 100mA 6 DTC144TUA Roh N SC70 npn dtr R1 47k 50V 100mA 6 DTC144TKA Roh N SC59 npn dtr R1 47k 50V 100mA 9 DTC115TUA Roh N SC70 npn dtr R2 100k 50V 100mA 9 DTC115TKA Roh N SC59 npn dtr R2 100k 50V 100mA

AZG贴片三极管印字

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTA1505 TRANSISTOR （PNP ） FEATURES · Excellent h FE linearity: · Complementary to KTC3876 MAXIMUM RATINGS (T a =25 unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions M in T yp Max Unit Collector-base breakdown voltage V (BR)CBO I C =-100μA,I E =0 -35 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA,I B =0 -30 V Emitter-base breakdown voltage V (BR)EBO I E =-100μA,I C =0 -5 V Collector cut-off current I CBO V CB =-35V,I E =0 -0.1 μA Emitter cut-off current I EBO V EB =-5V,I C =0 -0.1 μA h FE(1) V CE =-1V,I C =-100mA 70 400 DC current gain h FE(2) V CE =-6V,I C =-400mA 25 Collector-emitter saturation voltage V CE(sat) I C =-100mA,I B =-10mA -0.25V Base-emitter voltage V BE V CE =-1V,I C =-100mA -1 V Transition frequency f T V CE =-6V,I C =-20mA 200 MHz Collector output capacitance C ob V CB =-6V,I E =0,f=1MHz 13 pF CLASSIFICATION OF h FE(1) Rank O Y GR Range 70-140 120-240 200-400 Marking AZO AZY AZG COLLECTOR ℃ A,May,2011 https://www.360docs.net/doc/0818822378.html, 【南京南山半导体有限公司 — 长电贴片三极管选型资料】

贴片三极管封装上的印字,与真实名称的对照表

贴片三极管封装上的印字，与真实名称的对照表印字器件名厂家类型封装器件用途及参数 T2 HSMS-286C HP D SOT323 dual series HSMS-286B T2 HSMS-2862 HP D SOT23 dual series HSMS-286B t23 PDTA114TU Phi N SOT323 pnp dtr R1 10k t24 PDTC114TU Phi N SOT323 npn dtr R1 10k t2A PMBT3906 Phi N SOT23 2N3906 t2A PMST3906 Phi N SOT323 2N3906 t2B PMBT2907 Phi N SOT23 2N2907 t2D PMBTA92 Phi N SOT23 MPSA92 pnp Vce 300V t2D PMSTA92 Phi N SOT323 MPSA92 pnp Vce 300V t2E PMBTA93 Phi N SOT23 MPSA93 pnp Vce 200V t2E PMSTA93 Phi N SOT323 MPSA93 pnp Vce 200V t2F PMBT2907A Phi N SOT23 2N2907A t2F PMBT2907A Phi N SOT323 2N2907A t2G PMBTA56 Phi N SOT23 MPSA56 t2G PMSTA56 Phi N SOT323 MPSA56 t2H PMBTA55 Phi N SOT23 MPSA55 t2H PMSTA55 Phi N SOT323 MPSA55 t2L PMBT5401 Phi N SOT23 2N5401 pnp 150V t2L PMST5401 Phi N SOT323 2N5401 pnp 150V T2p BCX18 Phi N SOT23 BC328 t2T PMBT4403 Phi N SOT23 2N4403 t2T PMST4403 Phi N SOT323 2N4403 T2t BCX18 Phi N SOT23 BC328 t2U PMBTA63 Phi N SOT23 MPSA63 darlington t2V PMBTA* Phi H SOT23 MPSA* darlington t2X PMBT4401 Phi N SOT23 2N4401 t2X PMST4401 Phi N SOT323 2N4401 T3 BSS63 Phi N SOT23 BSS68 T3 HSMS-286E HP A SOT323 ca dual HSMS-286B T3 HSMS-2863 HP A SOT23 ca dual HSMS-286B t31 PDTA143XT Phi N SOT23 pnp dtr4k7+10k t32 PDTC143XT Phi N SOT23 pnp dtr 4k7+10ks T32 2SC4182 Nec N SOT23 npn RF fT @3V hfe 60-105 T33 2SC4182 Nec N SOT23 npn RF fT @3V hfe 85-150 T34 2SC4182 Nec N SOT23 npn RF fT @3V hfe 120-220 T4 BCX17R Phi R SOT23R BC327 T4 HSMS-286F HP B SOT323 cc dual HSMS-286B T4 HSMS-28* HP B SOT23 cc dual HSMS-286B T4 MBD330DW Mot DL SOT363 dual UHF schottky diode T42 2SC3545P Nec N - npn RF fT 2GHz hfe 50-100

印字16贴片三极管

A,Jun,2012 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT1616 TRANSISTOR (NPN) FEATURES z Audio frequency power amplifier z Medium speed switching MARKING:16· MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =10μA, I E =0 60 V Collector-emitter breakdown voltage V (BR)CEO I C =2mA, I B =0 50 V Emitter-base breakdown voltage V (BR)EBO I E =10μA, I C =0 6 V Collector cut-off current I CBO V CB = 60V, I E =0 100 nA Emitter cut-off current I EBO V EB =6V, I C =0 100 nA h FE(1) V CE =2V, I C =100mA 135 600 DC current gain h FE(2) V CE =2V, I C =1A 81 Collector-emitter saturation voltage V CE(sat) I C =1A, I B =50mA 0.3 V Collector-emitter saturation voltage V BE(sat) I C =1A, I B =50mA 1.2 V Base-emitter voltage V BE V CE =2V, I C =50mA 0.6 0.7 V Transition frequency f T V CE =2V,I C =100mA, f=100MHz 100 MHz Collector output capacitance C ob V CB =10V, I E =0, f=1MHz 19 pF CLASSIFICATION OF h FE(1) RANK Y G L RANGE 135~270 200~400 300~600 Symbol Parameter Value Unit V CBO Collector-Base Voltage 60 V V CEO Collector-Emitter Voltage 50 V V EBO Emitter-Base Voltage 6 V I C Collector Current 1 A P C Collector Power Dissipation 750 mW R ΘJA Thermal Resistance From Junction To Ambient 167 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55～+150℃ https://www.360docs.net/doc/0818822378.html, 【南京南山半导体有限公司 — 长电贴片三极管选型资料】

二,三极管,IC印字对型号

贴片3个脚 C001 A06 M073 QFN-6封装 IC表面编码 CCQ 09K E7E0 AR982 SOT-143 61HL SOT-143 B83 4脚 10A10 22A15 F5H3 F5HE 222 SOT-23 MARK为ECIG,封装为SOT-23 BU1H SOT-323 39BBAE AO 4MQU，封装为SOT-23的IC B8SN7 SOT-23封装, 丝印:B8TX4 SOT-23封装, 丝印:W2H SOT-23封装, 丝印:ZTW SOT-23封装, 丝印:L231 SOT-23封装 ,丝印:EA2 SOT-23封装, 丝印:8F SOT-23封装 M762 SCD7 BE30C N611 10 8Z FJKB1 FJJK5 TFT 3H0015 BA7 sot-23封装的，上标是X1YV与他垂直是10，标有A1FV与他垂直是16的是什么管子贴片二极管上写着ZE20J 贴片二极管CCD MZ 贴片二极管第一行03A 第2行F6 5D 贴片二极管ACX K7JA SOT-23

C251A 5V的稳压芯片，贴片封装,印字为8C032 NC SN 36W D.P S3 J7 P03B XP D:P 62Z A7 S3 KW 8C032 J7 27EI WC AFPL AFPL E601 E605 28C26 XB LY AP 2 ABNJ KS5R SOT23封装的丝印28G2G BAs87 BAs88 BAs89 W3W 贴片二极管封装是1206的丝印是T72是什么型号SOT－23的上面标有OOOI 贴片二极管标有16LE4 00BC，封装SOT-23 丝印Txw3F，这个x看不清，像0也像U，用x代替了与二极管上面写着D写或5.5 SOT-89的，上面丝印为：BD S2L 和 DD S3F 2314 贴片三极管印字76ee,8626 贴片三极管标HG18

常用贴片三极管主要参数及丝印

常用贴片三极管主要参数(SOT-23) 序号型号 TYPE 极性 POLA RITY P D (mW) I C (mA) BV CBO (V) BV CEO (V) h FE V CE(sat)I C/I B f TYPE (MHZ) 打标 Marking Min/Max I C mA V CE Volts Max Volts mA 1S9012PNP3005004025120/3505010.6500501502T1 2S9013NPN3005004025120/3505010.650050150J3 3S9014NPN2001005045200/1000150.31005150J6 4S9015PNP2001005045200/1000150.310010150M6 5S9018NPN20050251870/190 1.O50.51001600J8 6S8050NPN3005004025120/3505010.650050150J3Y 7S8550PNP3005004025120/3505010.6500501502TY 8SS8050NPN1001500402585/30010010.58008080Y1 9SS8550PNP1001500402585/30010010.58008080Y2 10C1815NPN20015060500130/400260.251001080HF 11A1015PNP2001505050130/400260.31001080BA 12C945NPN2001506050130/400160.310010150CR 13A733PNP2001506050120/475160.31001050CS 142SC1623NPN200100605090/600160.310010250L4、L5、L6、L7 15M28S NPN20010004020300/1000010010.556002010028S 16M8050NPN2001000402580/30010010.580080150Y11 17M8550PNP2001000402585/30010010.580080150Y21 18MMBT5551NPN30060018016080/25010 5.O0.550 5.O80G1 19MMBT5401PNP300600160150100/20010 5.O0.5500.51002L 20MMBTA42NPN300300300300100/20010100.2202501D 21MMBTA92NPN300300300300100/20010100.2202502D 222SC2412NPN2001506050120/560160.4505180BQ、BR、BS 232SC3356NPN300100201250/30020100.51057000R23、R24、R25 242SC3837NPN30050301856/39010100.52041500CN、CP、CQ、CR 252SC3838NPN30050201156/3905100.51053200AN、AP、AQ、AR 26BC807-16PNP2255005045100/25010010.7500502005A 27BC807-25PNP2255005045160/40010010.7500502005B 28BC807-40PNP2255005045250/60010010.7500502005C 29BC817-16NPN2255005045100/25010010.7500502006A 30BC817-25NPN2255005045160/40010010.7500502006B 31BC817-40NPN2255005045250/60010010.7500502006C 32BC846A NPN2251008065110/220250.610051001A 33BC846B NPN2251008065200/450250.610051001B 34BC847A NPN2251005045110/220250.610051001E 35BC847B NPN2251005045200/450250.610051001F 36BC847C NPN2251005045420/800250.610051001G 37BC848A NPN2251003030110/220250.610051001J 38BC848B NPN2251003030200/450250.610051001K 39BC848C NPN2251003030450/800250.610051001L 40BC858A PNP2251008065125/250250.6510051003A 41BC858B PNP2251008065220/475250.6510051003B 42BC857A PNP2251005045125/250250.6510051003E 43BC857B PNP2251005045220/475250.6510051003F 44BC875C PNP2251005045420/800250.6510051003G

BV4贴片三极管印字

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 TRANSISTOR (PNP) FEATURES z High DC current gain. h FE :200 TYP .(V CE =-1V,I C =-100mA) z Complimentary to 2SD596. MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage -30 V V CEO Collector-Emitter Voltage -25 V V EBO Emitter-Base Voltage -5 V I C Collector Current -Continuous -700 mA P D Total Device Dissipation 200 mW T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (T a =25 unless otherwise specified ) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-100μA,I E =0 -30 V Collector-emitter breakdown voltage V (BR)CEO I C = -1mA, I B =0 -25 V Emitter-base breakdown voltage V (BR)EBO I E = -100μA, I C =0 -5 V Collector cut-off current I CBO V CB =-30 V ,I E =0 -0.1 μA Emitter cut-off current I EBO V EB = -5V , I C =0 -0.1 μA h FE(1)* V CE = -1V,I C = -100mA 110 400 DC current gain h FE(2)* V CE =-1V,I C = -700mA 50 Collector-emitter saturation voltage V CE(sat) * I C =-700 mA, I B = -70mA -0.6 V Base-emitter voltage V BE * V CE =-6V, I C =-10mA -0.6 -0.7 V Transition frequency f T V CE = -6V,I C = -10mA 160 MHz Collector Output Capacitance C ob V CB =-6V,I E =0,f=1MH Z 17 pF * Pulse test : Pulse width ≤350μs,Duty Cycle ≤2%. CLASSIFICATION OF h FE (1) Marking BV1 BV2 BV3 BV4 BV5 Range 110-180 135-220 170-270 200-320 250-400 ℃ A,May,2011

常用二三极管丝印代码型对照表

贴片三极管型号查询直插封装的型号贴片的型号9011 1T 9012 2T 9013 J3 9014 J6 9015 M6 9016 Y6 9018 J8 S8050 J3Y S8550 2TY 8050 Y1 8550 Y2 2SA1015 BA 2SC1815 HF 2SC945 CR MMBT3904 1AM MMBT3906 2A MMBT2222 1P MMBT5401 2L MMBT5551 G1 MMBTA42 1D MMBTA92 2D BC807-16 5A BC807-25 5B BC807-40 5C BC817-16 6A BC817-25 6B BC817-40 6C BC846A 1A BC846B 1B

BC847A 1E BC847B 1F BC847C 1G BC848A 1J BC848B 1K BC848C 1L BC856A 3A BC856B 3B BC857A 3E BC857B 3F BC858A 3J BC858B 3K BC858C 3L 2SA733 CS UN2111 V1 UN2112 V2 UN2113 V3 UN2211 V4 UN2212 V5 UN2213 V6 2SC3356 R23 2SC3838 AD 2N7002702 电源保护IC常销系列: MAX323EPE,MAX708,MAX485,MAX487,MAX488,MAX202CSE,MAX202CPE,MAX1487CPA,MAX1482CS D,MAX1232CSA,MAX809,MAX811,DS1302,DS1307,DS1232,SS8205G,SD8205S,FDS9926A,SD943 5,SD4953,SD4410.... 钽电容常销系列:

常用贴片三极管与直插三极管型号对应

1．直插贴片型号对应直插封装的型号贴片的型号9011 1t 9012 2t 9013 j3 9014 j6 9015 m6 9016 y6 9018 j8 s8050 j3y s8550 2ty 8050 y1 8550 y2 2sa1015 ba 2sc1815 hf 2sc945 cr mmbt3904 1am mmbt3906 2a mmbt2222 1p mmbt5401 2l mmbt5551 g1 mmbta42 1d mmbta92 2d bc807-16 5a bc807-25 5b bc807-40 5c bc817-16 6a bc817-25 6b bc817-40 6c bc846a 1a bc846b 1b bc847a 1e bc847b 1f bc847c 1g bc848a 1j bc848b 1k bc848c 1l bc856a 3a bc856b 3b bc857a 3e bc857b 3f bc858a 3j

bc858b 3k bc858c 3l 2sa733 cs un2111 v1 un2112 v2 un2113 v3 un2211 v4 un2212 v5 un2213 v6 2sc3356 r23 2sc3838 ad 2n7002 702 2．直插贴片及极性、频率直插封装的型号贴片的型号极性Ft VCEO Ic hfe 配对型号9011 1T NPN 150MHz 18V 100mA 28~132 9012 2T PNP 150MHz 25V 500mA 64~144 9013 9013 J3 NPN 9014 J6 NPN 150MHz 18V 100mA 60~400 9015 9015 M6 PNP 9016 Y6 NPN 500MHz 20V 25mA 28~97 9018 J8 NPN 700MHZ 12V 100mA 28~72 S8050 J3Y NPN 100MHz 25V 1.5A 45~300 S8550 S8550 2TY PNP 8050 Y1 NPN 100MHz 25V 1A 85~300 8550 8550 Y2 PNP 2SA1015 BA PNP 2SC1815 HF NPN 80MHz 50V 150mA 70~700 1015 2SC945 CR NPN 250MHz 50V 100mA 200~600 2SA733 CS MMBT3904 1AM NPN 300MHz 60V 100mA 300@10mA 3906 MMBT3906 2A PNP MMBT2222 1P NPN 250MHz 60V 600mA 100@150mA MMBT5401 2L PNP 100MHz 150V 500mA 40~200 5551 MMBT5551 G1 NPN MMBTA42 1D NPN 50MHz 300V 100mA 40@10mA MMBTA92 2D PNP BC807-16 5A PNP BC807-25 5B PNP 80MHz 45V 500mA 250@100mA BC817-25 BC807-40 5C PNP 80MHz 45V 500mA 250@100mA BC817-40 BC817-16 6A NPN BC817-25 6B NPN

贴片三极管参数大全(材料相关)

三极管丝印对照表1

贴片三极管上的印字，与真实名称的对照表1 印字器件厂商类型封装器件用途及参数 -28PDTA114WU Phi N SOT323pnp dtr -24PDTC114TU Phi N SOT323npn dtr R110k -23PDTA114TU Phi N SOT323pnp dtr R110k -20PDTC114WU Phi N SOT323npn dtr -6PMSS3906Phi N SOT3232N3906 -4PMSS3904Phi N SOT3232N3904 02SC3603Nec CX SOT173Npn RF fT7GHz 1Gali-1MC AZ SOT89DC-8GHz MMIC amp12dB gain 12SC3587Nec CX-npn RF fT10GHz 1BA277Phi I SOD523VHF Tuner band switch diode 2BST82Phi M-n-ch mosfet80V175mA 2MRF5711L Mot X SOT143npn RF MRF571 2DTCC114T Roh N-50V100mA npn sw+10k base res 2Gali-2MC AZ SOT89DC-8GHz MMIC amp16dB gain 2BAT62-02W Sie I SCD80BAT16schottky diode 22SC3604Nec CX-npn RF fT8GHz12dB@2GHz 3Gali-3MC AZ SOT89DC-3GHz MMIC amp22dB gain 3DTC143TE Roh N EMT3npn dtr R14k750V100mA 3DTC143TUA Roh N SC70npn dtr R14k750V100mA 3DTC143TKA Roh N SC59npn dtr R14k750V100mA

常用二三极管丝印代码型号对照表

常用二三极管丝印代码型号对照表 Company Document number：WTUT-WT88Y-W8BBGB-BWYTT-19998

BC856B 3B BC857A 3E BC857B 3F BC858A 3J BC858B 3K BC858C 3L 2SA733 CS UN2111 V1 UN2112 V2 UN2113 V3 UN2211 V4 UN2212 V5 UN2213 V6 2SC3356 R23 2SC3838 AD 2N7002702 电源保护IC常销系列: MAX323EPE,MAX708,MAX485,MAX487,MAX488,MAX202CSE,MAX202CPE, MAX1487CPA,MAX1482CSD,MAX1232CSA,MAX809,MAX811,DS1302,DS1307, DS1232,SS8205G,SD8205S,FDS9926A,SD9435,SD4953,SD4410.... 钽电容常销系列: A型体积:1UF16V,,10UF10V,10UF16V,,,,100UF4V B型体积:,10UF16V,10UF20V,22UF10V,22UF16V,,33UF10V,, 47UF10V,,,220UF4V C:1UF50V,10UF25V,10UF35V,22UF16V,33UF16V,47UF16V,68UF16V,100UF10 V, D型体积:10UF35V,22UF25V,33UF25V,47UF25V,100UF16V,,220UF10V E型体积:150UF10V,220UF16V, 二三极管: MMBT3904,MMBT3906,MMBT2907A,MMBT2222A,MMBT8050,MMBT8550,S9 018,S9014,S9013,S9012,S9015,BSS138,BSS84,BAT54CSA,MMBTA92,MMBTA94,

贴片三极管二极管稳压管Mark对照表

Codes / Markings SMD codes 1st character/以第一个字符为基准 01234 56789 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 印字器件厂商类型封装器件用途及参数 0 2SC3603 Nec CX SOT173Npn RF fT 7GHz 005 SSTPAD5 Sil J -PAD-5 5pA leakage diode p01PDTA143ET Phi N SOT23pnp dtr 4k7+4k7 t01PDTA143ET Phi N SOT23pnp dtr 4k7+4k7 01Gali-1MC AZ SOT89DC-8GHz MMIC amp 12dB gain 010 SSTPAD10 Sil J -PAD-10 10pA leakage diode 011 SO2369R SGS R SOT23R2N2369 02 BST82 Phi M -n-ch mosfet 80V 175mA 02 MRF5711L Mot X SOT143npn RF MRF571 02 DTCC114T Roh N -50V 100mA npn sw + 10k base res 02Gali-2MC AZ SOT89DC-8GHz MMIC amp 16dB gain p02PDTC143ET Phi N SOT23npn 4k7+4k7 bias res t02PDTC143ET Phi N SOT23npn 4k7+4k7 bias res 03Gali-3MC AZ SOT89DC-3GHz MMIC amp 22dB gain 03DTC143TE Roh N EMT3npn dtr R1 4k7 50V 100mA 03DTC143TUA Roh N SC70npn dtr R1 4k7 50V 100mA 03DTC143TKA Roh N SC59npn dtr R1 4k7 50V 100mA 04 DTC114TCA Roh N SOT23npn dtr R1 10k 50V 100mA 04 DTC114TE Roh N EMT3npn dtr R1 10k 50V 100mA 04 DTC114TUA Roh N SC70npn dtr R1 10k 50V 100mA 04 DTC114TKA Roh N SC59npn dtr R1 10k 50V 100mA 04 MRF5211L Mot X SOT143pnp RF MRF521 04Gali-4MC AZ SOT89DC-4GHz MMIC amp 17.5 dBm -04PMSS3904Phi N SOT3232N3904 t04PMBS3904Phi N SOT232N3904 05Gali-4MC AZ SOT89DC-4GHz MMIC amp 18 dBm o/p 05 DTC124TE Roh N EMT3npn dtr R1 22k 50V 100mA 05 DTC124TUA Roh N SC70npn dtr R1 22k 50V 100mA 05 DTC124TKA Roh N SC59npn dtr R1 22k 50V 100mA 05F TSDF1205R Tfk WQ -fT12GHz npn 4V 5mA 06Gali-6MC AZ SOT89DC-4GHz MMIC amp 115 dBm o/p 06 DTC144TE Roh N EMT3npn dtr R1 47k 50V 100mA 06 DTC144TUA Roh N SC70npn dtr R1 47k 50V 100mA 06 DTC144TKA Roh N SC59npn dtr R1 47k 50V 100mA