CM800HA-28H中文资料
Single IGBTMOD?H-Series Module
800 Amperes/1400 Volts
CM800HA-28H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram Dimensions
Inches Millimeters A 5.12130.0B 4.33±0.01110.0±0.25
C 1.840
46.75
D 1.73±0.04/0.0244.0±1.0/0.5
E 1.46±0.04/0.0237.0±1.0/0.5
F 1.4236.0
G 1.2531.8
H 1.1830.0J 1.1028.0K
1.08
27.5
Description:
Powerex IGBTMOD? Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,offering simplified system assembly and thermal management.Features:
□Low Drive Power □Low V CE(sat)
□Discrete Super-Fast Recovery (135ns) Free-Wheel Diode □High Frequency Operation (20-25kHz)
□Ysolated Baseplate for Easy Heat Sinking Applications:
□AC Motor Control □Motion/Servo Control □UPS
□Welding Power Supplies □Laser Power Supplies
Ordering Information:
Example: Select the complete part module number you desire from the table below -i.e.
CM800HA-28H is a 1400V (V CES ),800 Ampere Single IGBTMOD?Power Module.
Type Current Rating V CES Amperes
Volts (x 50)
CM
800
28
Dimensions
Inches Millimeters L 0.7920.0M 0.7719.5N 0.7519.0P 0.6115.6Q 0.5113.0R 0.359.0S M8 Metric M8T 0.26 Dia.Dia. 6.5U
M4 Metric
M4
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM800HA-28H
Single IGBTMOD? H-Series Module
800 Amperes/1400 Volts
Absolute Maximum Ratings, T j = 25 °C unless otherwise specified
Ratings Symbol CM800HA-28H Units Junction Temperature T j–40 to +150°C Storage Temperature T stg–40 to +125°C Collector-Emitter Voltage (G-E SHORT)V CES1400Volts Gate-Emitter Voltage V GES±20Volts Collector Current I C800Amperes Peak Collector Current I CM1600*Amperes Diode Forward Current I F800Amperes Diode Forward Surge Current I FM1600*Amperes Power Dissipation P d4800Watts Max. Mounting Torque M8 Terminal Screws–95in-lb Max. Mounting Torque M6 Mounting Screws–26in-lb Max. Mounting Torque M4 G-E Terminal Screws–13in-lb Module Weight (T ypical)–1600Grams V Isolation V RMS2500Volts * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, T j = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min.Typ.Max.Units Collector-Cutoff Current I CES V CE = V CES, V GE = 0V–– 5.0mA Gate Leakage Current I GES V GE = V GES, V CE = 0V––0.5μA Gate-Emitter Threshold Voltage V GE(th)I C = 80mA, V CE = 10V 4.5 6.07.5Volts Collector-Emitter Saturation Voltage V CE(sat)I C = 800A, V GE = 15V– 2.7 3.6Volts
I C = 800A, V GE = 15V, T j = 150°C– 2.4–Volts Total Gate Charge Q G V CC = 600V, I C = 800A, V GS = 15V–4590–nC Diode Forward Voltage V FM I E = 800A, V GS = 0V–– 3.5Volts * Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T j = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min.Typ.Max.Units
ies
oes GE CE
res
Resistive Turn-on Delay Time t d(on)––500ns Load r CC C
Switching d(off)GE1GE2G
Times f
Diode Reverse Recovery Time t rr I E = 800A, di E/dt = –1600A/μs––250ns Diode Reverse Recovery Charge Q rr I E = 800A, di E/dt = –1600A/μs– 6.3–μC
Thermal and Mechanical Characteristics, T j = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min.Typ.Max.Units Thermal Resistance, Junction to Case R th(j-c)Per IGBT––0.026°C/W Thermal Resistance, Junction to Case R th(j-c)Per FWDi––0.058°C/W Contact Thermal Resistance R th(c-f)Per Module, Thermal Grease Applied––0.018°C/W
CM800HA-28H
Single IGBTMOD? H-Series Module 800 Amperes/1400 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 V CE , (VOLTS) I C , (A M P E R E S )
OUTPUT CHARACTERISTICS
(TYPICAL)1600
0246810
1200
800
400
V GE , (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
048121620
V GE , (VOLTS)
V C E (s a t ), (V O L T S )
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)10
048121620
8
6
4
2
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
I E , (A M P E R E S )
COLLECTOR CURRENT I C , (AMPERES)
S W I T C H I N G T I M E , (n s )
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V CE
(TYPICAL)
104
103
102
101
EMITTER CURRENT, I E , (AMPERES) R E V E R S E R E C O V E R Y T I M E , t r r , (n s )
10101
103102104
1010GATE CHARGE, Q G , (nC)
01500300045007500
6000I C , (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
0400800
12001600
CM800HA-28H
Single IGBTMOD? H-Series Module 800 Amperes/1400 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272TIME, (s)
N O R M A L I Z E D T R A N S I E N T T H E R M A L I M P E D A N C E , Z t h (j -c )
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
101
100
10-110-210-3
Z t h = R t h ? (N O R M A L I Z E D V A L U E )
-1-2-3TIME, (s)
N O R M A L I Z E D T R A N S I E N T T H E R M A L I M P E D A N C E , Z t h (j -c )
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
101
100
10-110-210-3
Z t h = R t h ? (N O R M A L I Z E D V A L U E )
-1
-2
-3