DN2540N3P014中文资料
Features
High input impedance Low input capacitance Fast switching speeds Low on-resistance
Free from secondary breakdown Low input and output leakage
Applications
Normally-on switches Solid state relays Converters Linear ampli? ers
Constant current sources Power supply circuits Telecom
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General Description
The Supertex DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DM OS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coef? cient inherent in M OS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DM OS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
N-Channel Depletion-Mode
Vertical DMOS FETs
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.* Distance of 1.6mm from case for 10 seconds.
Pin Con? gurations
TO-243AA (SOT-89) (N8)
TO-220 (N5)
TO-92 (N3)
GATE
SOURCE DRAIN
DRAIN
GATE
SOURCE
DRAIN
GATE
SOURCE DRAIN
DRAIN
Thermal Characteristics
Notes:
? I D (continuous) is limited by max rated T j .
? Mounted on FR5 board, 25mm x 25mm x 1.57mm.
Product Marking
TO-243AA (SOT-89) (N8)
TO-220 (N5)
TO-92 (N3)
Electrical Characteristics (T
= 25O C unless otherwise speci? ed)
L = Lot Number YY = Year Sealed WW = Week Sealed
= “Green” Packaging
YY = Year Sealed WW = Week Sealed
= “Green” Packaging
= “Green” Packaging
1. All D.C. parameters 100% tested at 25O C unless otherwise stated. (Pulse test: 300μs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
OUTPUT INPUT
OUTPUT
0V
V DD
0V
-10V
Switching Waveforms and Test Circuit
Electrical Characteristics(cont.)
Typical Performance Curves
Output Characteristics
0.5
0.4
0.3
0.2
0.1
Saturation Characteristics
V GS = 1.0V 0.5V 0V
-0.5V
-1.0V
1
1000
100
10
1
0.1
0.01
0.001
0.001
10
0.01
0.1
1
0.5
0.4
0.3
0.2
0.1
0I D )
s e r e p m a ( G S F )
s n e m e i s ( V DS (volts)I D )
s e r e p m a ( t p (seconds)
Typical Performance Curves (cont.)
BV DSS Variation with Temperature
V B S S D d
e z i l a m r o N 1.1
1.05
1.0
0.950.9
V DS (Volts)I D )
s e r e p m a ( 0.40
0.32
0.240.16
0.08
0)
s d a r a f o c i P ( C 200
150
100
50
00
10
20
30
40
On-Resistance vs. Drain Current
Q C (Nanocoulombs)
0.4
0.8
1.2
1.6
2.0
3-Lead TO-92 Package Outline (N3)
Drawings not to scale.
3-Lead TO-220 (Power Package) Package Outline (N5)
JEDEC Registration TO-220, Variation AB, Issue K, April 2002.
Drawings not to scale.
(The package drawing(s) in this data sheet may not re? ect the most current speci? cations. For the latest package outline information go to https://www.360docs.net/doc/251330657.html,/packaging.html .)
3-Lead TO-243AA (SOT-89) Package Outline (N8)
4.60x2.60mm body (max.), 1.60mm height (max), 1.50mm pitch
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.Drawings not to scale
.