IXTA76N075T

IXTA76N075T
IXTA76N075T

? 2006 IXYS CORPORATION All rights reserved

Symbol Test Conditions

Maximum Ratings

V DSS T J = 25°C to 175°C

75V V DGR T J = 25°C to 175°C; R GS = 1 M Ω75V V GSM Transient

± 20V I D25T C = 25°C

76A I LRMS Lead Current Limit, RMS

75A I DM T C = 25°C, pulse width limited by T JM 210A I AR T C = 25°C 10A E AS T C = 25°C

500mJ dv/dt I S ≤ I DM , di/dt ≤ 100 A/μs, V DD ≤ V DSS 3V/ns T J ≤ 175°C, R G = 10 ΩP D T C = 25°C

176

W T J -55 ... +175

°C T JM 175

°C T stg -55 ... +175

°C T L

1.6 mm (0.062 in.) from case for 10 s 300°C T SOLD Plastic body for 10 seconds 260

°C

M d Mounting torque (TO-220) 1.13 / 10Nm/lb.in.

Weight

TO-2203g TO-263

2.5

g

Symbol Test Conditions

Characteristic Values (T J = 25°C unless otherwise specified) Min. Typ.Max.BV DSS V GS

= 0 V, I D = 250 μA 75V V GS(th)V DS = V GS , I D = 50 μA 2.0

4.0V I GSS V GS = ± 20 V, V DS = 0 V ± 100nA I DSS V DS = V DSS 1

μA V GS = 0 V

T J = 150°C

250

μA R DS(on)

V GS = 10 V, I D = 25 A, Notes 1, 2

9.7

12

m Ω

TrenchMV TM

Power MOSFET

N-Channel Enhancement Mode Avalanche Rated

IXTA76N075T IXTP76N075T

V DSS =75V I D25

=

76A R DS(on)≤

12m Ω

DS99632 (11/06)

TO-263 (IXTA)

TO-220 (IXTP)

G

S

G

D

S

G = Gate D = Drain S = Source

TAB = Drain

(TAB)

(TAB)

Features

Ultra-low On Resistance

Unclamped Inductive Switching (UIS)rated

Low package inductance -easy to drive and to protect

175 °C Operating Temperature Advantages

Easy to mount

Space savings

High power density

Applications

Automotive -Motor Drives -42V Power Bus -ABS Systems

DC/DC Converters and Off-line UPS

Primary Switch for 24V and 48V Systems

High Current Switching Applications

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol Test Conditions Characteristic Values

(T J = 25°C unless otherwise specified)

Min.Typ.Max.

g fs V DS = 10 V; I D = 0.5 I D25, Note 1

30

55S C iss 2580pF C oss V GS = 0 V, V DS = 25 V, f = 1 MHz

390pF C rss 90pF t d(on)Resistive Switching Times 20ns t r V GS = 10 V, V DS = 0.5 V DSS , I D = 10 A 40ns t d(off)R G = 10 Ω (External)

38ns t f 33ns Q g(on)57nC Q gs V GS = 10 V, V DS = 0.5 V DSS , I D = 10 A 13.6nC Q gd 12.4

nC

R thJC 0.85°C/W

R thCH

TO-220

0.50

°C/W

Source-Drain Diode

Symbol Test Conditions

Characteristic Values T J = 25°C unless otherwise specified)Min.Typ.Max.

I S V GS = 0 V

76A I SM Pulse width limited by T JM 240A V SD I F = 25 A, V GS = 0 V, Note 1 1.1

V t rr

I F = 25 A, -di/dt = 100 A/μs 80

ns

V R = 40 V, V GS = 0 V

Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;

2. On through-hole packages, R DS(on) Kelvin test contact location must be 5 mm or less from the package body.

https://www.360docs.net/doc/2218755558.html,limeter Inches Pins:

1 - Gate

2 - Drain

3 - Source

4, TAB - Drain

IXYS MOSFETs and IGBTs are covered by 4,835,5924,931,8445,049,9615,237,4816,162,6656,404,065 B16,683,3446,727,5857,005,734 B2 one or moreof the following U.S. patents:4,850,072

5,017,5085,063,3075,381,0256,259,123 B16,534,3436,710,405B26,759,6927,063,975 B24,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6771478 B2

7,071,537

PRELIMINARY T ECHNICAL I NFORMATION

The product presented herein is under development. The Technical Specifications

offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions,and dimensions without notice.

? 2006 IXYS CORPORATION All rights reserved

IXYS reserves the right to change limits, test conditions, and dimensions.

? 2006 IXYS CORPORATION All rights reserved

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