IXTA76N075T
? 2006 IXYS CORPORATION All rights reserved
Symbol Test Conditions
Maximum Ratings
V DSS T J = 25°C to 175°C
75V V DGR T J = 25°C to 175°C; R GS = 1 M Ω75V V GSM Transient
± 20V I D25T C = 25°C
76A I LRMS Lead Current Limit, RMS
75A I DM T C = 25°C, pulse width limited by T JM 210A I AR T C = 25°C 10A E AS T C = 25°C
500mJ dv/dt I S ≤ I DM , di/dt ≤ 100 A/μs, V DD ≤ V DSS 3V/ns T J ≤ 175°C, R G = 10 ΩP D T C = 25°C
176
W T J -55 ... +175
°C T JM 175
°C T stg -55 ... +175
°C T L
1.6 mm (0.062 in.) from case for 10 s 300°C T SOLD Plastic body for 10 seconds 260
°C
M d Mounting torque (TO-220) 1.13 / 10Nm/lb.in.
Weight
TO-2203g TO-263
2.5
g
Symbol Test Conditions
Characteristic Values (T J = 25°C unless otherwise specified) Min. Typ.Max.BV DSS V GS
= 0 V, I D = 250 μA 75V V GS(th)V DS = V GS , I D = 50 μA 2.0
4.0V I GSS V GS = ± 20 V, V DS = 0 V ± 100nA I DSS V DS = V DSS 1
μA V GS = 0 V
T J = 150°C
250
μA R DS(on)
V GS = 10 V, I D = 25 A, Notes 1, 2
9.7
12
m Ω
TrenchMV TM
Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA76N075T IXTP76N075T
V DSS =75V I D25
=
76A R DS(on)≤
12m Ω
DS99632 (11/06)
TO-263 (IXTA)
TO-220 (IXTP)
G
S
G
D
S
G = Gate D = Drain S = Source
TAB = Drain
(TAB)
(TAB)
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)rated
Low package inductance -easy to drive and to protect
175 °C Operating Temperature Advantages
Easy to mount
Space savings
High power density
Applications
Automotive -Motor Drives -42V Power Bus -ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V Systems
High Current Switching Applications
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic Values
(T J = 25°C unless otherwise specified)
Min.Typ.Max.
g fs V DS = 10 V; I D = 0.5 I D25, Note 1
30
55S C iss 2580pF C oss V GS = 0 V, V DS = 25 V, f = 1 MHz
390pF C rss 90pF t d(on)Resistive Switching Times 20ns t r V GS = 10 V, V DS = 0.5 V DSS , I D = 10 A 40ns t d(off)R G = 10 Ω (External)
38ns t f 33ns Q g(on)57nC Q gs V GS = 10 V, V DS = 0.5 V DSS , I D = 10 A 13.6nC Q gd 12.4
nC
R thJC 0.85°C/W
R thCH
TO-220
0.50
°C/W
Source-Drain Diode
Symbol Test Conditions
Characteristic Values T J = 25°C unless otherwise specified)Min.Typ.Max.
I S V GS = 0 V
76A I SM Pulse width limited by T JM 240A V SD I F = 25 A, V GS = 0 V, Note 1 1.1
V t rr
I F = 25 A, -di/dt = 100 A/μs 80
ns
V R = 40 V, V GS = 0 V
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;
2. On through-hole packages, R DS(on) Kelvin test contact location must be 5 mm or less from the package body.
https://www.360docs.net/doc/2218755558.html,limeter Inches Pins:
1 - Gate
2 - Drain
3 - Source
4, TAB - Drain
IXYS MOSFETs and IGBTs are covered by 4,835,5924,931,8445,049,9615,237,4816,162,6656,404,065 B16,683,3446,727,5857,005,734 B2 one or moreof the following U.S. patents:4,850,072
5,017,5085,063,3075,381,0256,259,123 B16,534,3436,710,405B26,759,6927,063,975 B24,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6771478 B2
7,071,537
PRELIMINARY T ECHNICAL I NFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions,and dimensions without notice.
? 2006 IXYS CORPORATION All rights reserved
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2006 IXYS CORPORATION All rights reserved