50N06中文资料

UNISONIC TECHNOLOGIES CO., LTD

50N06

MOSFET

50 Amps, 60 Volts

N-CHANNEL POWER MOSFET

DESCRIPTION

The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt.

It is mainly suitable electronic ballast, and low power switching mode power appliances.

FEATURES

* R DS(ON) = 23m ?@V GS = 10 V

* Ultra low gate charge ( typical 30 nC )

* Low reverse transfer Capacitance ( C RSS = typical 80 pF ) * Fast switching capability

* 100% avalanche energy specified * Improved dv/dt capability

SYMBOL

1.Gate

TO-220

TO-220F

*Pb-free plating product number: 50N06L

ORDERING INFORMATION

Order Number Pin Assignment

Normal

Lead Free Plating Package 1 2 3 Packing

50N06-TA3-T 50N06L-x-TA3-T TO-220 G D S Tube 50N06-TF3-T 50N06L-x-TF3-T TO-220F G D S Tube

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL RATINGS UNIT

Drain-Source Voltage V DSS 60 V Gate to Source Voltage V GSS ±20 V

T C = 25 50 A

Continuous Drain Current T C = 100 I D

35 A

Drain Current Pulsed (Note 1) I DM 200 A Single Pulsed Avalanche Energy (Note 2) E AS 480 mJ Repetitive Avalanche Energy (Note 1) E AR 13 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 7 V/ns

Total Power Dissipation (T C = 25 ) 130 W

Derating Factor above 25

P D

0.9 W/ Operation Junction Temperature T J -55 ~ +150 Storage Temperature T STG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER SYMBOL MIN TYP MAX UNIT

Thermal Resistance, Junction-to-Case θJC 1.15 °C/W Thermal Resistance, Case-to-Sink θCS 0.5 °C/W Thermal Resistance, Junction-to-Ambient θJA 62.5 °C/W

ELECTRICAL CHARACTERISTICS T C = 25 unless otherwise specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Off Characteristics

Drain-Source Breakdown Voltage BV DSS V GS = 0 V, I D = 250 μA 60 V Breakdown Voltage Temperature Coefficient BV DSS /△T J I D = 250 μA,

Referenced to 25

0.07 V/

V DS = 60 V, V GS = 0 V μA

Drain-Source Leakage Current I DSS

V DS = 48 V, T C = 125

1 μA Gate-Source Leakage Current V GS = 20V, V DS = 0 V 100 nA

Gate-Source Leakage Reverse I GSS

V GS = -20V, V DS = 0 V -100 nA On Characteristics Gate Threshold Voltage V GS(TH) V DS = V GS , I D = 250 μA 2.0 4.0 V Static Drain-Source On-State

Resistance

R DS(ON) V GS = 10 V, I D = 25 A 18 23 m ?

Dynamic Characteristics Input Capacitance C ISS 900 1220 pF

Output Capacitance C OSS 430 550 pF

Reverse Transfer Capacitance C RSS

V GS = 0 V, V DS = 25 V

f = 1MHz

80 100 pF Dynamic Characteristics Turn-On Delay Time t D(ON) 40 60 ns

Rise Time t R 100 200 ns Turn-Off Delay Time t D(OFF) 90 180 ns

Fall Time t F V DD = 30V, I D =25 A, R G = 50? (Note 4, 5) 80 160 ns Total Gate Charge Q G 30 40 nC

Gate-Source Charge Q GS 9.6 nC

Gate-Drain Charge (Miller Charge) Q GD V DS = 48V, V GS = 10 V

I D = 50A, (Note 4, 5)

10 nC

2. L=5.6mH, I AS=50A, V DD=25V, R G=0?, Starting T J=25

3. I SD≤50A, di/dt≤300A/μs, V DD≤BV DSS, Starting T J=25

4. Pulse Test: Pulse Width≤300μs,Duty Cycle≤2%

5. Essentially independent of operating temperature.

TEST CIRCUITS AND WAVEFORMS

V DD

V GS (Driver)

I SD (D.U.T.)

Body Diode

Forward Voltage Drop

V DS

(D.U.T.)

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

Fig. 1B Peak Diode Recovery dv/dt Waveforms

TEST CIRCUITS AND WAVEFORMS (Cont.)

R L

V DS

90%

10%

V GS

Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms

Fig. 3A Gate Charge Test Circuit

Fig. 3B Gate Charge Waveform

10V

V DD

I AS

Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

TYPICAL CHARACTERISTICS

1010101010Drain -Source Voltage , V DS (V)

D r a i n C u r r e n t , I D (A )

On-State Characteristics

101010Gate-Source Voltage , V GS (V)

D r a i n C u r r e n t , I D (A )

Transfer Characteristics

0D r a i n -S o u r c e O n -R e s i s t a n c e , R D S (O N ) (m Ω)

Drain Current , I D (A)

4080200

100140On-Resistance Variation vs . Drain Current

102

10100

0.2Source-Drain Voltage , V SD (V)

R e v e r s e D r a i n C u r r e n t , I S D (A )

On State Current vs. Allowable Case

Temperature

1.6

0.40.60.8 1.0 1.2 1.4

2060120160180

Drain -Source Voltage, V DC (V)

C a p a c i t a n c e (p F )

Capacitance Characteristics

1020G a t e -t o -S o u r c e V o l t a g e , V G S (V )

Total Gate Charge , Q G (nC)

81012Gate Charge Characteristics

4015253035

TYPICAL CHARACTERISTICS(Cont.)

-100D r a i n -S o u r c e B r e a k d o w n V o l t a g e , B V D S S (N o r m a l i z e d )

Junction Temperature , T J (℃)

-50

200

100

150Breakdown Voltage Variation vs . Junction

, -5050100150On-Resistance Variation vs . 0Junction Temperature , T J (℃)

1010

Drain-Source Voltage , V DS (V)

D r a i n C u r r e n t , I D ,(A )

Maximum Safe Operating

1010D r a i n C u r r e n t , I D (A )

Case Temperature, T C (℃)

7510050Maximum Drain Current vs . Case Temperature 0

125502510203040101010

10Square Wave Pulse Duration , t 1 (sec)

T h e r m a l R e s p o n s e , Z θJ C (t )

101010

10101010101Transient Thermal