PSMN038-100K中文资料

PSMN038-100K

N-channel enhancement mode ?eld-effect transistor

Rev. 01 — 16 January 2001

Product speci?cation

c c

1.Description

SiliconMAX?1 products use the latest Philips TrenchMOS?2 technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) package.Product availability:

PSMN038-100K in SOT96-1 (SO8).

2.Features

s Very low on-state resistance s Fast switching

s TrenchMOS? technology.

3.Applications

s DC to DC convertor

s Computer motherboards

s Switch mode power supplies.

4.Pinning information

1.SiliconMAX is a trademark of Royal Philips Electronics.

2.TrenchMOS is a trademark of Royal Philips Electronics.

Table 1:Pinning - SOT96-1, simpli?ed outline and symbol

Pin Description Simpli?ed outline

Symbol

1,2,3source (s)SOT96-1 (SO8)

4gate (g)5,6,7,8

drain (d)

Top view

MBK187

MBB076

5.Quick reference data

Table 2:Quick reference data

Symbol Parameter Conditions Typ Max Unit V DS drain-source voltage (DC)T j=25to150°C?100V

I D drain current (DC)T sp=80°C;Figure2 and3? 6.3A

P tot total power dissipation T sp=80°C;Figure1? 3.5W T j junction temperature?150°C R DSon drain-source on-state resistance V GS=10V; I D=5.2A; T j=25°C3338m?

6.Limiting values

Table 3:Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit V DS drain-source voltage (DC)T j=25to150°C?100V

V GS gate-source voltage (DC)?±20V

I D drain current (DC)T sp=80°C? 6.3A

I DM peak drain current T sp=25°C; pulsed; t p≤10μs?50A

P tot total power dissipation T sp=80°C? 3.5W T stg storage temperature?55+150°C T j operating junction temperature?55+150°C Source-drain diode

I S source (diode forward) current (DC)T sp=80°C? 3.1A

I SM peak source (diode forward) current T sp=25°C; pulsed; t p≤10μs?50A

V GS ≥5V

Fig 1.Normalized total power dissipation as a

function of solder point temperature.

Fig 2.Normalized continuous drain current as a

function of solder point temperature.

T sp =25°C; I DM is single pulse

Fig 3.Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

03aa17

020

100

1200

100

125150175

P der T sp

(o C)

(%)03aa25

100

1200

100

125

150175I der T sp (o C)

(%)

P der P tot

P tot 25C °

()

----------------------100%

×=I der I D

I D 25C °

()

------------------100%

×=03ad97

10-2

10-1

10210-1

102

103

V DS (V)

I D (A)

D.C.

100 ms

10 ms

R DSon = V DS / I D

1 ms

tp = 10 μs 100 μs t p

t p T

δ =

7.Thermal characteristics

7.1Transient thermal impedance

Table 4:Thermal characteristics

Symbol Parameter

Conditions

Value Unit R th(j-sp)

thermal resistance from junction to solder point

mounted on a metal clad substrate;Figure 4

K/W

T sp =25°C

Fig 4.Transient thermal impedance from junction to solder point as a function of pulse duration.

03ad96

10-2

10-1

10210-4

10-3

10-2

10-1

102

t p (s)

Z th(j-sp) (K/W)single pulse

δ = 0.50.20.1

0.050.02

t p

t p T

δ =

8.Characteristics

Table 5:Characteristics

T j=25°C unless otherwise speci?ed

Symbol Parameter Conditions Min Typ Max Unit Static characteristics

V(BR)DSS drain-source breakdown voltage I D=250μA; V GS=0V100130?V

V GS(th)gate-source threshold voltage I D=1mA; V DS=V GS;Figure9

T j=25°C2?4V

T j=150°C 1.2??V

T j=?55°C??6V

I DSS drain-source leakage current V DS=80V; V GS=0V; T j=25°C??1μA

V DS=100V; V GS=0V; T j=150°C??0.5mA I GSS gate-source leakage current V GS=±20V; V DS=0V??100nA R DSon drain-source on-state resistance V GS=10V; I D=5.2A;Figure7 and8

T j=25°C?3338m?

T j=150°C?7688m?Dynamic characteristics

g fs forward transconductance V DS=15V; I D=6.3A;Figure11?20?S

Q g(tot)total gate charge I D=6.3A; V DD=50V; V GS=10V;Figure14?43?nC Q gs gate-source charge? 6.5?nC Q gd gate-drain (Miller) charge?1621.5nC C iss input capacitance V GS=0V; V DS=25V; f=1MHz;Figure12?1740?pF C oss output capacitance?220?pF C rss reverse transfer capacitance?135?pF t d(on)turn-on delay time V DD=50V; I D=1A; V GS=10V;R G=6??1530ns t r rise time?1325ns t d(off)turn-off delay time?5080ns t f fall time?2540ns Source-drain (reverse) diode

V SD source-drain (diode forward) voltage I S=2.3A; V GS=0V;Figure13?0.7 1.1V

t rr reverse recovery time I S=6.3A; dI S/dt=?100A/μs; V GS=0V?85?ns Q r recovery charge?0.3?μC

T j =25°C T j =25°C and 150°C; V DS >I D ×R DSon

Fig 5.Output characteristics: drain current as a

function of drain-source voltage;typical values.Fig 6.Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

T j =25°C

Fig 7.Drain-source on-state resistance as a function

of drain current; typical values.Fig 8.Normalized drain-source on-state resistance

factor as a function of junction temperature.

03ad98

010

500

V DS (V)I D (A) 5 V

4.5 V

7 V

6 V

V GS = 10 V 03ae00

01020

500

V GS (V)I D (A)V DS > I D X R DSon

T j = 150 oC

25 oC

03ad99

0.03

0.04

0.050.060.070.080.090.10

4050

I D (A)R DSon (?)T j = 25 oC

V GS = 6 V

7 V 10 V

4.5 V 5 V

03aa29

0.20.40.60.811.21.41.61.822.22.42.62.83-60

-20

100

140180T j (o C)

a a R DSon

R DSon 25C °

()

---------------------------=

I D =1mA; V DS =V GS T j =25°C; V DS =5V

Fig 9.Gate-source threshold voltage as a function of

junction temperature.

Fig 10.Sub-threshold drain current as a function of

gate-source voltage.

T j =25°C and 150°C; V DS >I D ×R DSon V GS =0V; f =1MHz

Fig 11.Forward transconductance as a function of

drain current; typical values.

Fig 12.Input,output and reverse transfer capacitances

as a function of drain-source voltage; typical values.

03aa32

00.511.522.533.544.55

-60

-20

100

140180

V GS(th)T j (o C)

(V)

max.

typ.min 03aa35

10-6

10-5

10-4

10-3

10-2

10-10

max

typ

min

V GS (V)

I D (A)

03ae01

010

400

4050

I D (A)g fs (S)T j = 25 oC

150 oC

V DS > I D X R DSon

03ae03

102

103

10410-1

102

V DS (V)C iss , C oss , C rss (pF)

C iss

C oss

C rss

T j =25°C and 150°C; V GS =0V I D =6.3A; V DD =20V , 50V and 80V

Fig 13.Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical values.

Fig 14.Gate-source voltage as a function of gate

charge; typical values.

03ae02010

2030

500

0.4

0.8

1.2

V SD (V)I S (A)T j = 25 oC

150 oC

V GS = 0 V

03ae04

Q G (nC)

V GS (V)I D = 6.3 A T j = 25 oC V DD = 20 V 50 V 80 V

9.Package outline

Fig 15.SOT96-1 (SO8).

UNIT A

max.A 1A 2A 3b p c D (1)E (2)(1)e H E L L p Q Z y w v θ

REFERENCES

OUTLINE VERSION EUROPEAN PROJECTION

ISSUE DATE IEC JEDEC EIAJ

mm inches

1.750.250.10

1.451.25

0.250.490.36

0.250.19

5.04.8 4.03.8 1.27

6.25.8

1.05

0.70.6

0.70.38

0.250.10.25DIMENSIONS (inch dimensions are derived from the original mm dimensions)Notes

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

1.00.4

SOT96-1

w M

A 1

A 2

b p

D H E

L p

detail X

E Z e

L v M A

(A )3

pin 1 index

076E03

MS-012

0.069

0.0100.0040.0570.0490.01

0.0190.0140.01000.00750.200.19

0.160.15

0.050

0.2440.2280.028

0.024

0.0280.012

0.01

0.041

0.004

0.0390.0160 2.5 5 mm

scale

SO8: plastic small outline package; 8 leads; body width 3.9 mm

SOT96-1

97-05-2299-12-27

10.Revision history

Table 6:Revision history

Rev Date CPCN Description

0120010116-Product speci?cation; initial version

11.Data sheet status

[1]Please consult the most recently issued data sheet before initiating or completing a design.

12.De?nitions

Short-form speci?cation —The data in a short-form speci?cation is extracted from a full data sheet with the same type number and title.For detailed information see the relevant data sheet or data handbook.

Limiting values de?nition —Limiting values given are in accordance with the Absolute Maximum Rating System(IEC60134).Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speci?cation is not implied.Exposure to limiting values for extended periods may affect device reliability.

Application information —Applications that are described herein for any of these products are for illustrative purposes only.Philips Semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation.13.Disclaimers

Life support —These products are not designed for use in life support appliances,devices,or systems where malfunction of these products can reasonably be expected to result in personal injury.Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes —Philips Semiconductors reserves the right to make changes,without notice,in the products,including circuits,standard cells,and/or software,described or contained herein in order to improve design and/or performance.Philips Semiconductors assumes no responsibility or liability for the use of any of these products,conveys no licence or title under any patent,copyright,or mask work right to these products,and makes no representations or warranties that these products are free from patent,copyright,or mask work right infringement,unless otherwise speci?ed.

Datasheet status Product status De?nition[1]

Objective speci?cation Development This data sheet contains the design target or goal speci?cations for product development. Speci?cation may

change in any manner without notice.

Preliminary speci?cation Quali?cation This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips

Semiconductors reserves the right to make changes at any time without notice in order to improve design and

supply the best possible product.

Product speci?cation Production This data sheet contains ?nal speci?cations. Philips Semiconductors reserves the right to make changes at any

time without notice in order to improve design and supply the best possible product.

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Building BE, P.O.Box218, 5600MD EINDHOVEN,

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? Philips Electronics N.V. 2001.Printed in The Netherlands

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The information presented in this document does not form part of any quotation or contract,is believed to be accurate and reliable and may be changed without notice.No liability will be accepted by the publisher for any consequence of its use.Publication Contents

1Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14Pinning information . . . . . . . . . . . . . . . . . . . . . . 15Quick reference data . . . . . . . . . . . . . . . . . . . . . 26Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . 27Thermal characteristics . . . . . . . . . . . . . . . . . . . 47.1Transient thermal impedance. . . . . . . . . . . . . . 48Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 59Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 910Revision history . . . . . . . . . . . . . . . . . . . . . . . . 1011Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 1112Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1113

Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11