英飞凌IGBT功耗计算
Infineon IGBT 模块功耗计算 V7.5c 东方科技
module selection for 3-phase inverter applications
ECM-340
选定模块输入参数直流电压 V dc 960V 输出频率 f 050Hz 开关频率 f s 600Hz
调制系数 m 0.8功率因数 φ0.9输出电流 I RMS
170
A
热参数最大结温 T j
125
°C 最大环境温度 T a
40°C 每桥臂散热器热阻 R th
0.15K/W
结到壳热阻 R jc
IGBT:0.085DIODE:0.13 K/W 壳到散热器热阻 R ch IGBT:
0.033DIODE:
0.051 K/W 每桥臂热阻 R arm R jc =0.051 R ch =0.020 K/W 模块热阻 R moudle
R jc =
0.026
R ch =
0.010
K/W
芯片损耗(170A )
IGBT Diode 导通损耗P cond
112W 26W 开关损耗P SW 32W 13W 总损耗
144
W
39
W
P RCC'EE'=11W
Per Arm P 总=183.3W
P 总=366.6W
P RCC'EE'损耗通过接线端子散发出去,极端条件下也会进入基板。
温度(170A )
Diode 最大结温 T j 77°C D T j
最小结温 T j 75°C 1
K
壳温 T c
71°C 散热器温度 T hs
69
°C
最大电流 Tj <= 125°C 312A
温度(311.7A )
Diode 最大结温 T j 125°C D T j
最小结温 T j 122°C 3
K
壳温 T c
114°C 散热器温度 T hs
110
°C
损耗 vs. 电流I RMS I peak P IGBT
P diode P RCC'EE'Tj_diode [A][A][W][W][W][°C]2130121146426025141496490401815285120582235710615076264611381951083276817024014439107721230019849168927639029366281113394804048542136424600
577114
65176
FF300R17KE3 >>Diode
62mm HB
average losses for sinusoidal output current at 600 Hz
switching frequency
losses and corresponding junction temperature ripple
for the diode at Irms =170A
case-to-heatsink and heatsink-to-ambient for Ta = 40°C
and a given heatsink
temperature distribution across diode junction-to-case,0100
200
300
400
500
600
700
800
50
100
150
200
250
300
350
400
450
W
A RMS
损耗(IGBT) / W
损耗(diode) / W 每桥臂损耗(IGBT + diode) / W max. losses (IGBT)
@ Tcase=80°C
max. losses (diode) @ Tcase=80°C
40
50
60
708090100
110
120130
1401500
21
42
64
85
106
138
170
212
276
339
424
℃
A RMS
T j-c T c-hs T hs-a
.
7172
73
74
75
76
77
020
40
60
80
100
120
140
0.000
0.005
0.010
0.015
0.020
℃
W
s
损耗p(t)平均损耗温度波动
Infineon 计算程序,https://www.360docs.net/doc/4d7399853.html,/iposim 内部资料 结构室整理2013-8-28