SPB80N06S2L-07中文资料
SPB80N06S2L-07
Opti MOS ? Power-Transistor
Product Summary V DS 55V R DS(on)7m
?I D
80
A
Feature
? N-Channel
? Enhancement mode ? Logic Level
? 175°C operating temperature ? Avalanche rated ? d v /d t rated
P- TO263 -3-2
P- TO220 -3-1
Marking 2N06L072N06L07
Type
Package Ordering Code SPP80N06S2L-07P- TO220 -3-1Q67040-S4285SPB80N06S2L-07
P- TO263 -3-2
Q67040-S4288
Maximum Ratings , at T j = 25 °C, unless otherwise specified Parameter
Symbol Value Unit Continuous drain current 1)
T C =25°C
I D
8080
A
Pulsed drain current
T C =25°C
I D puls 320Avalanche energy, single pulse
I D =80 A , V DD =25V, R GS =25?
E AS 450mJ
Repetitive avalanche energy, limited by T jmax 2)E AR 21Reverse diode d v /d t
I S =80A, V DS =44V, d i /d t =200A/μs, T jmax =175°C
d v /d t 6kV/μs Gat
e source voltage V GS ±20V Power dissipation
T C =25°C
P tot 210W Operating and storage temperature T j , T stg
-55... +175°C IEC climatic category; DIN IEC 68-1
55/175/56
SPB80N06S2L-07 Thermal Characteristics
Parameter Symbol Values Unit
min.typ.max. Characteristics
Thermal resistance, junction - case R thJC -0.460.7K/W Thermal resistance, junction - ambient, leaded R thJA--62
SMD version, device on PCB: @ min. footprint
@ 6 cm2 cooling area 3)R thJA
-
-
-
-
62
40
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min.typ.max. Static Characteristics
Drain-source breakdown voltage
V GS=0V, I D=1mA
V(BR)DSS55--V
Gate threshold voltage, V GS = V DS
I D=150μA
V GS(th) 1.2 1.62
Zero gate voltage drain current V DS=55V, V GS=0V, T j=25°C
V DS=55V, V GS=0V, T j=125°C I DSS
-
-
0.01
1
1
100
μA
Gate-source leakage current
V GS=20V, V DS=0V
I GSS-1100nA Drain-source on-state resistance
V GS=4.5V, I D=60A
R DS(on)-7.110m?Drain-source on-state resistance
V GS=10V, I D=60A
R DS(on)- 5.67
1Current limited by bondwire ; with an R
thJC = 0.7K/W the chip is able to carry I D= 121A at 25°C, for detailed information see app.-note ANPS071E available at https://www.360docs.net/doc/4211851604.html,/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain connection. PCB is vertical without blown air.
SPB80N06S2L-07
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min.typ.max. Dynamic Characteristics
Transconductance g fs V DS≥2*I D*R DS(on)max,
I D=80A
52104-S
Input capacitance C iss V GS=0V, V DS=25V,
f=1MHz -31604210pF
Output capacitance C oss-740990 Reverse transfer capacitance C rss-210310
Turn-on delay time t d(on)V DD=30V, V GS=10V,
I D=80A,
R G=2?-1827ns
Rise time t r-3552
Turn-off delay time t d(off)-2842
Fall time t f-3147
Gate Charge Characteristics
Gate to source charge Q gs V DD=44V, I D=80A-1114nC Gate to drain charge Q gd-3248 Gate charge total Q g V DD=44V, I D=80A,
V GS=0 to 10V
-95130 Gate plateau voltage V(plateau)V DD=44V, I D=80A- 3.5-V Reverse Diode
Inverse diode continuous
forward current
I S T C=25°C--80A
Inv. diode direct current, pulsed I SM--320 Inverse diode forward voltage V SD V GS=0V, I F=80A-0.9 1.3V
Reverse recovery time t rr V R=30V, I F=l S,
d i F/d t=100A/μs -5975ns
Reverse recovery charge Q rr-80100nC
SPB80N06S2L-07
1 Power dissipation
P tot = f (T C)
parameter: V GS≥ 4 V
SPP80N06S2L-07
P
t
o
t
2 Drain current
I D
= f (T C)
parameter: V GS≥ 10 V
I
D
4 Max. transient thermal impedance
Z thJC = f (t p)
parameter : D = t p/T
10
10
10
10
10
10
1
10
K/W
SPP80N06S2L-07
Z
t
h
J
C
3 Safe operating area
I D = f ( V DS )
parameter : D = 0 , T C = 25 °C
3 SPP80N06S2L-07
I
D
SPB80N06S2L-07
5 Typ. output characteristic
I D = f (V DS); T j=25°C
parameter: t p = 80 μs
I
D
6 Typ. drain-source on resistance
R DS(on) = f (I D)
parameter: V GS
m?
SPP80N06S2L-07
R
D
S
(
o
n
)
7 Typ. transfer characteristics
I D= f ( V GS ); V DS≥ 2 x I D x R DS(on)max
parameter: t p = 80 μs
I
D
8 Typ. forward transconductance
g fs = f(I D); T j=25°C
parameter: g fs
S
g
f
s
SPB80N06S2L-07
9 Drain-source on-state resistance R DS(on) = f (T j )
parameter : I D = 60 A, V
= 10 V
m ?
26
R D
S (o n
)
10 Typ. gate threshold voltage V GS(th) = f (T j )parameter: V GS = V DS
V
V G S (t h )
11 Typ. capacitances C = f (V DS )
parameter: V GS =0V, f =1 MHz
10 10 10 pF
C
12 Forward character. of reverse diode I F = f (V SD )
parameter: T j , t p = 80 μs
10 10 10 3 10 A
SPP80N06S2L-07
I F
SPB80N06S2L-07
13 Typ. avalanche energy
E AS = f (T j)
par.: I D = 80 A , V DD = 25 V, R GS = 25 ?
mJ
E
A
S
14 Typ. gate charge
V GS= f (Q Gate)
parameter: I D = 80 A pulsed
V
SPP80N06S2L-07
V
G
S
15 Drain-source breakdown voltage
V(BR)DSS = f (T j)
parameter: I D=10 mA
SPP80N06S2L-07
V
(
B
R
)
D
S
S
SPB80N06S2L-07 Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
? Infineon Technologies AG 1999
All Rights Reserved.
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Further information
Please notice that the part number is B SPP80N06S2L-07 and B SPB80N06S2L-07, for simplicity the device is referred
to by the term SPP80N06S2L-07 and SPB80N06S2L-07 throughout this documentation.