SPB80N06S2L-07中文资料

SPB80N06S2L-07

Opti MOS ? Power-Transistor

Product Summary V DS 55V R DS(on)7m

?I D

80

A

Feature

? N-Channel

? Enhancement mode ? Logic Level

? 175°C operating temperature ? Avalanche rated ? d v /d t rated

P- TO263 -3-2

P- TO220 -3-1

Marking 2N06L072N06L07

Type

Package Ordering Code SPP80N06S2L-07P- TO220 -3-1Q67040-S4285SPB80N06S2L-07

P- TO263 -3-2

Q67040-S4288

Maximum Ratings , at T j = 25 °C, unless otherwise specified Parameter

Symbol Value Unit Continuous drain current 1)

T C =25°C

I D

8080

A

Pulsed drain current

T C =25°C

I D puls 320Avalanche energy, single pulse

I D =80 A , V DD =25V, R GS =25?

E AS 450mJ

Repetitive avalanche energy, limited by T jmax 2)E AR 21Reverse diode d v /d t

I S =80A, V DS =44V, d i /d t =200A/μs, T jmax =175°C

d v /d t 6kV/μs Gat

e source voltage V GS ±20V Power dissipation

T C =25°C

P tot 210W Operating and storage temperature T j , T stg

-55... +175°C IEC climatic category; DIN IEC 68-1

55/175/56

SPB80N06S2L-07 Thermal Characteristics

Parameter Symbol Values Unit

min.typ.max. Characteristics

Thermal resistance, junction - case R thJC -0.460.7K/W Thermal resistance, junction - ambient, leaded R thJA--62

SMD version, device on PCB: @ min. footprint

@ 6 cm2 cooling area 3)R thJA

-

-

-

-

62

40

Electrical Characteristics, at T j = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min.typ.max. Static Characteristics

Drain-source breakdown voltage

V GS=0V, I D=1mA

V(BR)DSS55--V

Gate threshold voltage, V GS = V DS

I D=150μA

V GS(th) 1.2 1.62

Zero gate voltage drain current V DS=55V, V GS=0V, T j=25°C

V DS=55V, V GS=0V, T j=125°C I DSS

-

-

0.01

1

1

100

μA

Gate-source leakage current

V GS=20V, V DS=0V

I GSS-1100nA Drain-source on-state resistance

V GS=4.5V, I D=60A

R DS(on)-7.110m?Drain-source on-state resistance

V GS=10V, I D=60A

R DS(on)- 5.67

1Current limited by bondwire ; with an R

thJC = 0.7K/W the chip is able to carry I D= 121A at 25°C, for detailed information see app.-note ANPS071E available at https://www.360docs.net/doc/4211851604.html,/optimos

2Defined by design. Not subject to production test.

3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain connection. PCB is vertical without blown air.

SPB80N06S2L-07

Electrical Characteristics

Parameter Symbol Conditions Values Unit

min.typ.max. Dynamic Characteristics

Transconductance g fs V DS≥2*I D*R DS(on)max,

I D=80A

52104-S

Input capacitance C iss V GS=0V, V DS=25V,

f=1MHz -31604210pF

Output capacitance C oss-740990 Reverse transfer capacitance C rss-210310

Turn-on delay time t d(on)V DD=30V, V GS=10V,

I D=80A,

R G=2?-1827ns

Rise time t r-3552

Turn-off delay time t d(off)-2842

Fall time t f-3147

Gate Charge Characteristics

Gate to source charge Q gs V DD=44V, I D=80A-1114nC Gate to drain charge Q gd-3248 Gate charge total Q g V DD=44V, I D=80A,

V GS=0 to 10V

-95130 Gate plateau voltage V(plateau)V DD=44V, I D=80A- 3.5-V Reverse Diode

Inverse diode continuous

forward current

I S T C=25°C--80A

Inv. diode direct current, pulsed I SM--320 Inverse diode forward voltage V SD V GS=0V, I F=80A-0.9 1.3V

Reverse recovery time t rr V R=30V, I F=l S,

d i F/d t=100A/μs -5975ns

Reverse recovery charge Q rr-80100nC

SPB80N06S2L-07

1 Power dissipation

P tot = f (T C)

parameter: V GS≥ 4 V

SPP80N06S2L-07

P

t

o

t

2 Drain current

I D

= f (T C)

parameter: V GS≥ 10 V

I

D

4 Max. transient thermal impedance

Z thJC = f (t p)

parameter : D = t p/T

10

10

10

10

10

10

1

10

K/W

SPP80N06S2L-07

Z

t

h

J

C

3 Safe operating area

I D = f ( V DS )

parameter : D = 0 , T C = 25 °C

3 SPP80N06S2L-07

I

D

SPB80N06S2L-07

5 Typ. output characteristic

I D = f (V DS); T j=25°C

parameter: t p = 80 μs

I

D

6 Typ. drain-source on resistance

R DS(on) = f (I D)

parameter: V GS

m?

SPP80N06S2L-07

R

D

S

(

o

n

)

7 Typ. transfer characteristics

I D= f ( V GS ); V DS≥ 2 x I D x R DS(on)max

parameter: t p = 80 μs

I

D

8 Typ. forward transconductance

g fs = f(I D); T j=25°C

parameter: g fs

S

g

f

s

SPB80N06S2L-07

9 Drain-source on-state resistance R DS(on) = f (T j )

parameter : I D = 60 A, V

= 10 V

m ?

26

R D

S (o n

)

10 Typ. gate threshold voltage V GS(th) = f (T j )parameter: V GS = V DS

V

V G S (t h )

11 Typ. capacitances C = f (V DS )

parameter: V GS =0V, f =1 MHz

10 10 10 pF

C

12 Forward character. of reverse diode I F = f (V SD )

parameter: T j , t p = 80 μs

10 10 10 3 10 A

SPP80N06S2L-07

I F

SPB80N06S2L-07

13 Typ. avalanche energy

E AS = f (T j)

par.: I D = 80 A , V DD = 25 V, R GS = 25 ?

mJ

E

A

S

14 Typ. gate charge

V GS= f (Q Gate)

parameter: I D = 80 A pulsed

V

SPP80N06S2L-07

V

G

S

15 Drain-source breakdown voltage

V(BR)DSS = f (T j)

parameter: I D=10 mA

SPP80N06S2L-07

V

(

B

R

)

D

S

S

SPB80N06S2L-07 Published by

Infineon Technologies AG,

Bereichs Kommunikation

St.-Martin-Strasse 53,

D-81541 München

? Infineon Technologies AG 1999

All Rights Reserved.

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,

regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings

Due to technical requirements components may contain dangerous substances.

For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express

written approval of Infineon Technologies, if a failure of such components can reasonably be expected to

cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device

or system Life support devices or systems are intended to be implanted in the human body, or to support

and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health

of the user or other persons may be endangered.

Further information

Please notice that the part number is B SPP80N06S2L-07 and B SPB80N06S2L-07, for simplicity the device is referred

to by the term SPP80N06S2L-07 and SPB80N06S2L-07 throughout this documentation.

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