BUK7675-100A中文资料
BUK7575-100A;BUK7675-100A
TrenchMOS? standard level FET
Rev. 01 — 24 October 2000
Product speci?cation
c
c
1.Description
N-channel enhancement mode ?eld-effect power transistor in a plastic package using TrenchMOS? technology, featuring very low on-state resistance.Product availability:
BUK7575-100A in SOT78 (TO-220AB)BUK7675-100A in SOT404(D 2-P AK).
2.Features
s TrenchMOS? technology s Q101 compliant s 175°C rated
s
Standard level compatible.
3.Applications
s Automotive and general purpose power switching:
x 12V , 24V and 42V loads x Motors, lamps and solenoids.
4.Pinning information
Table 1:Pinning - SOT78 and SOT404, simpli?ed outline and symbol Pin Description Simpli?ed outline Symbol
1gate (g)
SOT78 (TO-220AB)SOT404 (D 2-PAK)
2drain (d)3source (s)
mb
mounting base;
connected to drain (d)
MBK106
12mb
3
13
2
MBK116
mb
s
d
g
MBB076
5.Quick reference data
6.Limiting values
Table 2:Quick reference data
Symbol Parameter
Conditions
Typ Max Unit V DS drain-source voltage (DC)?100V I D drain current (DC)T mb =25°C; V GS =10V ?23A P tot total power dissipation T mb =25°C
?99W T j junction temperature
?
175
°C
R DSon
drain-source on-state resistance
V GS =10V; I D =13A T j =25°C ?75m ?T j =175°C
?
187
m ?
Table 3:Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions
Min Max Unit V DS drain-source voltage (DC)?100V V DGR drain-gate voltage (DC) R GS =20k ??100V V GS gate-source voltage (DC)?±20V I D
drain current (DC)
T mb =25°C; V GS =10V;Figure 2and 3
?23A T mb =100°C; V GS =10V;Figure 2
?16.2A I DM peak drain current T mb =25°C; pulsed; t p ≤10μs;Figure 3
?92A P tot total power dissipation T mb =25°C;Figure 1?99W T stg storage temperature
?55+175°C T j operating junction temperature ?55+175°C Source-drain diode
I DR reverse drain current (DC)T mb =25°C
?23A I DRM pulsed reverse drain current T mb =25°C; pulsed; t p ≤10μs ?92A Avalanche ruggedness
W DSS
non-repetitive avalanche energy
unclamped inductive load; I D =14A;V DS ≤100V; V GS =10V; R GS =50?;starting T mb =25°C
?
100
mJ
V GS ≥4.5V
Fig 1.Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.Normalized continuous drain current as a
function of mounting base temperature.
T mb =25°C; I DM single pulse.
Fig 3.Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03na19
020
40
60
80
100
1200
25
50
75
100
125
150175200P der (%)
T mb (o C)
03aa24
020
40
60
80
100
1200
25
50
75
100
125
150175200I der (%)T mb
(o C)
P der P tot
P tot 25C °
()
----------------------100%
×=I der I D
I D 25C °
()
------------------100%
×=03nb34
110
100
10001
10
100
1000
V DS (V)
I D (A)
D.C.
100 ms
10 ms R DSon = V DS / I D
1 ms t p = 10 us 100 us
t p
t p T
P
t
T
δ =
7.Thermal characteristics
7.1Transient thermal impedance
Table 4:Thermal characteristics Symbol Parameter
Conditions
Value Unit R th(j-a)
thermal resistance from junction to ambient
vertical in still air; SOT78 package 60K/W mounted on printed circuit board;minimum footprint; SOT404package
50
K/W
R th(j-mb)
thermal resistance from junction to mounting base
Figure 4
1.5K/W
Fig 4.Transient thermal impedance from junction to mounting base as a function of pulse duration.
03nb35
Single Shot
0.20.1
0.050.02
0.01
0.1
1
1010-610-510-410-310-210-1
1
t p (s)
Z th(j-mb) (K/W)
δ = 0.5
t p
t p T
P
t
T
δ =
8.Characteristics
Table 5:Characteristics
T j=25°C unless otherwise speci?ed
Symbol Parameter Conditions Min Typ Max Unit Static characteristics
V(BR)DSS drain-source breakdown
voltage I D=0.25mA; V GS=0V
T j=25°C100??V T j=?55°C89??V
V GS(th)gate-source threshold voltage I D=1mA; V DS=V GS;
Figure9
T j=25°C234V
T j=175°C1??V
T j=?55°C?? 4.4V I DSS drain-source leakage current V DS=100V; V GS=0V
T j=25°C?0.0510μA
T j=175°C??500μA I GSS gate-source leakage current V GS=±20V; V DS=0V?2100nA
R DSon drain-source on-state
resistance V GS=10V; I D=13A;
Figure7and8
T j=25°C?6475m?T j=175°C??187m?
Dynamic characteristics
C iss input capacitance V GS=0V; V DS=25V;
f=1MHz;Figure12?9071210pF
C oss output capacitance?127150pF C rss reverse transfer capacitance?78110pF
t d(on)turn-on delay time V DD=30V; R L=2.2?;
V GS=10V; R G=5.6?;?8?ns
t r rise time?39?ns t d(off)turn-off delay time?26?ns t f fall time?24?ns L d internal drain inductance from drain lead 6mm from
package to centre of die
? 4.5?nH
from contact screw on
mounting base to centre of
die SOT78
? 3.5?nH
from upper edge of drain
mounting base to centre of
die SOT404
? 2.5?nH
L s internal source inductance from source lead to source
bond pad
?7.5?nH
Source-drain diode
V SD source-drain (diode forward)voltage
I S =25A; V GS =0V;Figure 15
?0.85 1.2V t rr reverse recovery time I S =13A;dI S /dt =?100A/μs V GS =?10V; V DS =30V
?64?ns Q r
recovered charge
?
120
?
nC
Table 5:Characteristics …continued T j =25°C unless otherwise speci?ed Symbol Parameter
Conditions Min Typ Max Unit T j =25°C; t p =300μs T j =25°C; I D =10A
Fig 5.Output characteristics: drain current as a
function of drain-source voltage;typical values.Fig 6.Drain-source on-state resistance as a function
of gate-source voltage; typical values.
T j =25°C
Fig 7.Drain-source on-state resistance as a function
of drain current; typical values.Fig 8.Normalized drain-source on-state resistance
factor as a function of junction temperature.
03nb31
010
20
30
40
50
600
2
4
6
8
10
V DS (V)
I D (A) 4.5
5.5
6.5
7.5
2010
9
8
V GS (V) =03nb30
50
55
6065
70758085
905
10
15
20
V GS (V)
R DSon (m ?)
03nb32
40
60
80
100
1200
10
20
30
4050
I D (A)
R DSon (m ?)6
6.578
10
V GS (V)=5.5
03aa29
0.20.40.60.811.21.41.61.822.22.42.62.83-60
-20
20
60
100
140180T j (o C)
a a R DSon
R DSon 25C °()
---------------------------=
I D =1mA; V DS =V GS T j =25°C; V DS =V GS
Fig 9.Gate-source threshold voltage as a function of
junction temperature.
Fig 10.Sub-threshold drain current as a function of
gate-source voltage.
T j =25°C; V DS =25V V GS =0V; f =1MHz
Fig 11.Forward transconductance as a function of
drain current; typical values.
Fig 12.Input,output and reverse transfer capacitances
as a function of drain-source voltage; typical values.
03aa32
00.511.522.533.544.55
-60
-20
20
60
100
140180
V GS(th)T j (o C)
(V)
max.
typ.min 03aa35
10-6
10-5
10-4
10-3
10-2
10-10
1
2
3
45
max
typ
min
V GS (V)
I D (A)
03nb28
05
1015
200
10
20
3040
I D
(A)g fs (S)03nb33
0200
400600
80010001200
140016001800
20000.01
0.1
1
10
100
V DS (V)
C (pF)
Ciss
Coss Crss
V DS =25V T j =25°C; I D =25A
Fig 13.Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14.Gate-source voltage as a function of turn-on
gate charge; typical values.
V GS =0V
Fig 15.Reverse diode current as a function of reverse diode voltage; typical values.
03nb29
0510********
350
2
4
68
V GS
(V)I D (A)
T j = 175 O
C
T j = 25 O
C
03nb27
123
456789
1001020
30
Q G (nC)
V GS (V)V DS = 80 V
V DS = 14 V
03nb26
0510152025303540450.0
0.2
0.4
0.60.8
1.0 1.2V SD (V)
I S (A)
T j = 175O
C
T j = 25O
C
9.Package outline
REFERENCES
OUTLINE VERSION EUROPEAN PROJECTION
ISSUE DATE IEC
JEDEC EIAJ SOT78
SC-46
3-lead TO-220AB
D
D 1
q
P
L
123
L 2(1)
b 1
e e
b
0510 mm
scale
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
DIMENSIONS (mm are the original dimensions)A E A 1
c
Note
1. Terminals in this zone are not tinned.
Q
L 1
UNIT A 1b 1D 1e P mm
2.54
q Q A b D c L 2(1)
max.3.0
3.83.6
15.013.5
3.302.79
3.02.7
2.62.2
0.70.4
15.815.2
0.90.7
1.31.0
4.54.1
1.391.27
6.45.9
10.39.7
L 1E L 99-09-1300-09-07
mounting base
UNIT A REFERENCES
OUTLINE VERSION EUROPEAN PROJECTION
ISSUE DATE IEC
JEDEC
EIAJ
mm
A 1D 1D max.E e L p H D Q c 2.54
2.602.20
15.4014.80
2.902.10
11
1.601.20
10.309.70
4.504.10
1.401.27
0.850.60
0.640.46
b DIMENSIONS (mm are the original dimensions) SOT404
0 2.5 5 mm
scale
Plastic single-ended surface mounted package (Philips version of D 2-PAK); 3 leads (one lead cropped)
SOT404
e e
E
b
D 1
H D
D
Q
L p
c A 1
A
13
2
mounting base
98-12-1499-06-25
10.Soldering
Dimensions in mm.
Fig 18.Re?ow soldering footprint for SOT404.
handbook, full pagewidth
MSD057
solder lands solder resist occupied area solder paste
10.50
7.40
7.501.50
1.70
10.60 1.201.301.55
5.08
10.850.30
2.15
8.35
2.254.60
0.20
3.00
4.85
7.95
8.158.075
8.275
5.40
1.50
11.Revision history
Table 6:Revision history
Rev Date CPCN Description
0120001024-Product speci?cation; initial version
12.Data sheet status
[1]Please consult the most recently issued data sheet before initiating or completing a design.
13.De?nitions
Short-form speci?cation —The data in a short-form speci?cation is extracted from a full data sheet with the same type number and title.For detailed information see the relevant data sheet or data handbook.
Limiting values de?nition —Limiting values given are in accordance with the Absolute Maximum Rating System(IEC60134).Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speci?cation is not implied.Exposure to limiting values for extended periods may affect device reliability.
Application information —Applications that are described herein for any of these products are for illustrative purposes only.Philips Semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation.14.Disclaimers
Life support —These products are not designed for use in life support appliances,devices,or systems where malfunction of these products can reasonably be expected to result in personal injury.Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes —Philips Semiconductors reserves the right to make changes,without notice,in the products,including circuits,standard cells,and/or software,described or contained herein in order to improve design and/or performance.Philips Semiconductors assumes no responsibility or liability for the use of any of these products,conveys no licence or title under any patent,copyright,or mask work right to these products,and makes no representations or warranties that these products are free from patent,copyright,or mask work right infringement,unless otherwise speci?ed.
Datasheet status Product status De?nition[1]
Objective speci?cation Development This data sheet contains the design target or goal speci?cations for product development. Speci?cation may
change in any manner without notice.
Preliminary speci?cation Quali?cation This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
Product speci?cation Production This data sheet contains ?nal speci?cations. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
Philips Semiconductors - a worldwide company
Argentina: see South America
Australia: Tel.+61297048141,Fax.+61297048139 Austria: Tel. +43160101, Fax.+431601011210
Belarus: Tel. +37517 220 0733, Fax.+37517 220 0773 Belgium: see The Netherlands
Brazil:see South America
Bulgaria: Tel. +359268 9211, Fax.+359268 9102
Canada: Tel. +18002347381
China/Hong Kong: Tel. +852 2 3197888, Fax.+8522 3197700 Colombia: see South America
Czech Republic: see Austria
Denmark: Tel. +453 2882636, Fax.+453 1570044
Finland: Tel. +3589615800, Fax.+358961580920
France: Tel. +33140996161, Fax.+33140996427 Germany: Tel. +4940235360, Fax.+49402353 6300 Hungary: see Austria
India: Tel. +91224938541, Fax.+91224938722
Indonesia: see Singapore
Ireland: Tel. +35317640000, Fax.+35317640200
Israel: Tel. +97236450444, Fax.+97236491007
Italy: Tel. +390392036838,Fax +390392036800
Japan: Tel. +81337405130, Fax.+81337405057
Korea: Tel. +8227091412, Fax.+8227091415
Malaysia: Tel. +60 37505214, Fax.+6037574880
Mexico: Tel. +9-58002347381
Middle East: see Italy Netherlands: Tel. +31402782785, Fax.+31402788399
New Zealand: Tel. +6498494160, Fax.+6498497811 Norway: Tel. +4722748000, Fax.+4722748341 Philippines: Tel. +6328166380, Fax.+6328173474 Poland: Tel. +48225710000, Fax.+48225710001 Portugal: see Spain
Romania: see Italy
Russia: Tel. +70957556918, Fax.+70957556919 Singapore: Tel. +653502538, Fax.+652516500
Slovakia: see Austria
Slovenia: see Italy
South Africa: Tel. +27114715401, Fax.+27114715398 South America: Tel. +55118212333, Fax.+55118291849 Spain: Tel. +3433016312, Fax.+3433014107
Sweden: Tel. +4686322000, Fax.+4686322745 Switzerland: Tel. +4114882686, Fax.+4114817730 Taiwan: Tel. +886221342451, Fax.+886221342874 Thailand: Tel. +6623617910, Fax.+6623983447
Turkey: Tel. +902165221500, Fax.+902165221813 Ukraine: Tel. +380442642776, Fax.+380442680461
United Kingdom: Tel. +442087305000, Fax.+442087548421 United States: Tel. +18002347381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: Tel. +381113341299, Fax.+381113342553
For all other countries apply to: Philips Semiconductors, Marketing Communications,
Building BE, P.O.Box218, 5600MD EINDHOVEN,
The Netherlands,Fax.+31402724825Internet:https://www.360docs.net/doc/5515042653.html, (SCA70)
? Philips Electronics N.V. 2000.Printed in The Netherlands
All rights are reserved.Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
Contents
1Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14Pinning information . . . . . . . . . . . . . . . . . . . . . . 15Quick reference data . . . . . . . . . . . . . . . . . . . . . 26Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . 27Thermal characteristics . . . . . . . . . . . . . . . . . . . 47.1Transient thermal impedance. . . . . . . . . . . . . . 48Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 59Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 910Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1111Revision history . . . . . . . . . . . . . . . . . . . . . . . . 1212Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 1313Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1314
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13