BUK7675-100A中文资料

BUK7575-100A;BUK7675-100A

TrenchMOS? standard level FET

Rev. 01 — 24 October 2000

Product speci?cation

c

c

1.Description

N-channel enhancement mode ?eld-effect power transistor in a plastic package using TrenchMOS? technology, featuring very low on-state resistance.Product availability:

BUK7575-100A in SOT78 (TO-220AB)BUK7675-100A in SOT404(D 2-P AK).

2.Features

s TrenchMOS? technology s Q101 compliant s 175°C rated

s

Standard level compatible.

3.Applications

s Automotive and general purpose power switching:

x 12V , 24V and 42V loads x Motors, lamps and solenoids.

4.Pinning information

Table 1:Pinning - SOT78 and SOT404, simpli?ed outline and symbol Pin Description Simpli?ed outline Symbol

1gate (g)

SOT78 (TO-220AB)SOT404 (D 2-PAK)

2drain (d)3source (s)

mb

mounting base;

connected to drain (d)

MBK106

12mb

3

13

2

MBK116

mb

s

d

g

MBB076

5.Quick reference data

6.Limiting values

Table 2:Quick reference data

Symbol Parameter

Conditions

Typ Max Unit V DS drain-source voltage (DC)?100V I D drain current (DC)T mb =25°C; V GS =10V ?23A P tot total power dissipation T mb =25°C

?99W T j junction temperature

?

175

°C

R DSon

drain-source on-state resistance

V GS =10V; I D =13A T j =25°C ?75m ?T j =175°C

?

187

m ?

Table 3:Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions

Min Max Unit V DS drain-source voltage (DC)?100V V DGR drain-gate voltage (DC) R GS =20k ??100V V GS gate-source voltage (DC)?±20V I D

drain current (DC)

T mb =25°C; V GS =10V;Figure 2and 3

?23A T mb =100°C; V GS =10V;Figure 2

?16.2A I DM peak drain current T mb =25°C; pulsed; t p ≤10μs;Figure 3

?92A P tot total power dissipation T mb =25°C;Figure 1?99W T stg storage temperature

?55+175°C T j operating junction temperature ?55+175°C Source-drain diode

I DR reverse drain current (DC)T mb =25°C

?23A I DRM pulsed reverse drain current T mb =25°C; pulsed; t p ≤10μs ?92A Avalanche ruggedness

W DSS

non-repetitive avalanche energy

unclamped inductive load; I D =14A;V DS ≤100V; V GS =10V; R GS =50?;starting T mb =25°C

?

100

mJ

V GS ≥4.5V

Fig 1.Normalized total power dissipation as a

function of mounting base temperature.

Fig 2.Normalized continuous drain current as a

function of mounting base temperature.

T mb =25°C; I DM single pulse.

Fig 3.Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

03na19

020

40

60

80

100

1200

25

50

75

100

125

150175200P der (%)

T mb (o C)

03aa24

020

40

60

80

100

1200

25

50

75

100

125

150175200I der (%)T mb

(o C)

P der P tot

P tot 25C °

()

----------------------100%

×=I der I D

I D 25C °

()

------------------100%

×=03nb34

110

100

10001

10

100

1000

V DS (V)

I D (A)

D.C.

100 ms

10 ms R DSon = V DS / I D

1 ms t p = 10 us 100 us

t p

t p T

P

t

T

δ =

7.Thermal characteristics

7.1Transient thermal impedance

Table 4:Thermal characteristics Symbol Parameter

Conditions

Value Unit R th(j-a)

thermal resistance from junction to ambient

vertical in still air; SOT78 package 60K/W mounted on printed circuit board;minimum footprint; SOT404package

50

K/W

R th(j-mb)

thermal resistance from junction to mounting base

Figure 4

1.5K/W

Fig 4.Transient thermal impedance from junction to mounting base as a function of pulse duration.

03nb35

Single Shot

0.20.1

0.050.02

0.01

0.1

1

1010-610-510-410-310-210-1

1

t p (s)

Z th(j-mb) (K/W)

δ = 0.5

t p

t p T

P

t

T

δ =

8.Characteristics

Table 5:Characteristics

T j=25°C unless otherwise speci?ed

Symbol Parameter Conditions Min Typ Max Unit Static characteristics

V(BR)DSS drain-source breakdown

voltage I D=0.25mA; V GS=0V

T j=25°C100??V T j=?55°C89??V

V GS(th)gate-source threshold voltage I D=1mA; V DS=V GS;

Figure9

T j=25°C234V

T j=175°C1??V

T j=?55°C?? 4.4V I DSS drain-source leakage current V DS=100V; V GS=0V

T j=25°C?0.0510μA

T j=175°C??500μA I GSS gate-source leakage current V GS=±20V; V DS=0V?2100nA

R DSon drain-source on-state

resistance V GS=10V; I D=13A;

Figure7and8

T j=25°C?6475m?T j=175°C??187m?

Dynamic characteristics

C iss input capacitance V GS=0V; V DS=25V;

f=1MHz;Figure12?9071210pF

C oss output capacitance?127150pF C rss reverse transfer capacitance?78110pF

t d(on)turn-on delay time V DD=30V; R L=2.2?;

V GS=10V; R G=5.6?;?8?ns

t r rise time?39?ns t d(off)turn-off delay time?26?ns t f fall time?24?ns L d internal drain inductance from drain lead 6mm from

package to centre of die

? 4.5?nH

from contact screw on

mounting base to centre of

die SOT78

? 3.5?nH

from upper edge of drain

mounting base to centre of

die SOT404

? 2.5?nH

L s internal source inductance from source lead to source

bond pad

?7.5?nH

Source-drain diode

V SD source-drain (diode forward)voltage

I S =25A; V GS =0V;Figure 15

?0.85 1.2V t rr reverse recovery time I S =13A;dI S /dt =?100A/μs V GS =?10V; V DS =30V

?64?ns Q r

recovered charge

?

120

?

nC

Table 5:Characteristics …continued T j =25°C unless otherwise speci?ed Symbol Parameter

Conditions Min Typ Max Unit T j =25°C; t p =300μs T j =25°C; I D =10A

Fig 5.Output characteristics: drain current as a

function of drain-source voltage;typical values.Fig 6.Drain-source on-state resistance as a function

of gate-source voltage; typical values.

T j =25°C

Fig 7.Drain-source on-state resistance as a function

of drain current; typical values.Fig 8.Normalized drain-source on-state resistance

factor as a function of junction temperature.

03nb31

010

20

30

40

50

600

2

4

6

8

10

V DS (V)

I D (A) 4.5

5.5

6.5

7.5

2010

9

8

V GS (V) =03nb30

50

55

6065

70758085

905

10

15

20

V GS (V)

R DSon (m ?)

03nb32

40

60

80

100

1200

10

20

30

4050

I D (A)

R DSon (m ?)6

6.578

10

V GS (V)=5.5

03aa29

0.20.40.60.811.21.41.61.822.22.42.62.83-60

-20

20

60

100

140180T j (o C)

a a R DSon

R DSon 25C °()

---------------------------=

I D =1mA; V DS =V GS T j =25°C; V DS =V GS

Fig 9.Gate-source threshold voltage as a function of

junction temperature.

Fig 10.Sub-threshold drain current as a function of

gate-source voltage.

T j =25°C; V DS =25V V GS =0V; f =1MHz

Fig 11.Forward transconductance as a function of

drain current; typical values.

Fig 12.Input,output and reverse transfer capacitances

as a function of drain-source voltage; typical values.

03aa32

00.511.522.533.544.55

-60

-20

20

60

100

140180

V GS(th)T j (o C)

(V)

max.

typ.min 03aa35

10-6

10-5

10-4

10-3

10-2

10-10

1

2

3

45

max

typ

min

V GS (V)

I D (A)

03nb28

05

1015

200

10

20

3040

I D

(A)g fs (S)03nb33

0200

400600

80010001200

140016001800

20000.01

0.1

1

10

100

V DS (V)

C (pF)

Ciss

Coss Crss

V DS =25V T j =25°C; I D =25A

Fig 13.Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Fig 14.Gate-source voltage as a function of turn-on

gate charge; typical values.

V GS =0V

Fig 15.Reverse diode current as a function of reverse diode voltage; typical values.

03nb29

0510********

350

2

4

68

V GS

(V)I D (A)

T j = 175 O

C

T j = 25 O

C

03nb27

123

456789

1001020

30

Q G (nC)

V GS (V)V DS = 80 V

V DS = 14 V

03nb26

0510152025303540450.0

0.2

0.4

0.60.8

1.0 1.2V SD (V)

I S (A)

T j = 175O

C

T j = 25O

C

9.Package outline

REFERENCES

OUTLINE VERSION EUROPEAN PROJECTION

ISSUE DATE IEC

JEDEC EIAJ SOT78

SC-46

3-lead TO-220AB

D

D 1

q

P

L

123

L 2(1)

b 1

e e

b

0510 mm

scale

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

SOT78

DIMENSIONS (mm are the original dimensions)A E A 1

c

Note

1. Terminals in this zone are not tinned.

Q

L 1

UNIT A 1b 1D 1e P mm

2.54

q Q A b D c L 2(1)

max.3.0

3.83.6

15.013.5

3.302.79

3.02.7

2.62.2

0.70.4

15.815.2

0.90.7

1.31.0

4.54.1

1.391.27

6.45.9

10.39.7

L 1E L 99-09-1300-09-07

mounting base

UNIT A REFERENCES

OUTLINE VERSION EUROPEAN PROJECTION

ISSUE DATE IEC

JEDEC

EIAJ

mm

A 1D 1D max.E e L p H D Q c 2.54

2.602.20

15.4014.80

2.902.10

11

1.601.20

10.309.70

4.504.10

1.401.27

0.850.60

0.640.46

b DIMENSIONS (mm are the original dimensions) SOT404

0 2.5 5 mm

scale

Plastic single-ended surface mounted package (Philips version of D 2-PAK); 3 leads (one lead cropped)

SOT404

e e

E

b

D 1

H D

D

Q

L p

c A 1

A

13

2

mounting base

98-12-1499-06-25

10.Soldering

Dimensions in mm.

Fig 18.Re?ow soldering footprint for SOT404.

handbook, full pagewidth

MSD057

solder lands solder resist occupied area solder paste

10.50

7.40

7.501.50

1.70

10.60 1.201.301.55

5.08

10.850.30

2.15

8.35

2.254.60

0.20

3.00

4.85

7.95

8.158.075

8.275

5.40

1.50

11.Revision history

Table 6:Revision history

Rev Date CPCN Description

0120001024-Product speci?cation; initial version

12.Data sheet status

[1]Please consult the most recently issued data sheet before initiating or completing a design.

13.De?nitions

Short-form speci?cation —The data in a short-form speci?cation is extracted from a full data sheet with the same type number and title.For detailed information see the relevant data sheet or data handbook.

Limiting values de?nition —Limiting values given are in accordance with the Absolute Maximum Rating System(IEC60134).Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speci?cation is not implied.Exposure to limiting values for extended periods may affect device reliability.

Application information —Applications that are described herein for any of these products are for illustrative purposes only.Philips Semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation.14.Disclaimers

Life support —These products are not designed for use in life support appliances,devices,or systems where malfunction of these products can reasonably be expected to result in personal injury.Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes —Philips Semiconductors reserves the right to make changes,without notice,in the products,including circuits,standard cells,and/or software,described or contained herein in order to improve design and/or performance.Philips Semiconductors assumes no responsibility or liability for the use of any of these products,conveys no licence or title under any patent,copyright,or mask work right to these products,and makes no representations or warranties that these products are free from patent,copyright,or mask work right infringement,unless otherwise speci?ed.

Datasheet status Product status De?nition[1]

Objective speci?cation Development This data sheet contains the design target or goal speci?cations for product development. Speci?cation may

change in any manner without notice.

Preliminary speci?cation Quali?cation This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips

Semiconductors reserves the right to make changes at any time without notice in order to improve design and

supply the best possible product.

Product speci?cation Production This data sheet contains ?nal speci?cations. Philips Semiconductors reserves the right to make changes at any

time without notice in order to improve design and supply the best possible product.

Philips Semiconductors - a worldwide company

Argentina: see South America

Australia: Tel.+61297048141,Fax.+61297048139 Austria: Tel. +43160101, Fax.+431601011210

Belarus: Tel. +37517 220 0733, Fax.+37517 220 0773 Belgium: see The Netherlands

Brazil:see South America

Bulgaria: Tel. +359268 9211, Fax.+359268 9102

Canada: Tel. +18002347381

China/Hong Kong: Tel. +852 2 3197888, Fax.+8522 3197700 Colombia: see South America

Czech Republic: see Austria

Denmark: Tel. +453 2882636, Fax.+453 1570044

Finland: Tel. +3589615800, Fax.+358961580920

France: Tel. +33140996161, Fax.+33140996427 Germany: Tel. +4940235360, Fax.+49402353 6300 Hungary: see Austria

India: Tel. +91224938541, Fax.+91224938722

Indonesia: see Singapore

Ireland: Tel. +35317640000, Fax.+35317640200

Israel: Tel. +97236450444, Fax.+97236491007

Italy: Tel. +390392036838,Fax +390392036800

Japan: Tel. +81337405130, Fax.+81337405057

Korea: Tel. +8227091412, Fax.+8227091415

Malaysia: Tel. +60 37505214, Fax.+6037574880

Mexico: Tel. +9-58002347381

Middle East: see Italy Netherlands: Tel. +31402782785, Fax.+31402788399

New Zealand: Tel. +6498494160, Fax.+6498497811 Norway: Tel. +4722748000, Fax.+4722748341 Philippines: Tel. +6328166380, Fax.+6328173474 Poland: Tel. +48225710000, Fax.+48225710001 Portugal: see Spain

Romania: see Italy

Russia: Tel. +70957556918, Fax.+70957556919 Singapore: Tel. +653502538, Fax.+652516500

Slovakia: see Austria

Slovenia: see Italy

South Africa: Tel. +27114715401, Fax.+27114715398 South America: Tel. +55118212333, Fax.+55118291849 Spain: Tel. +3433016312, Fax.+3433014107

Sweden: Tel. +4686322000, Fax.+4686322745 Switzerland: Tel. +4114882686, Fax.+4114817730 Taiwan: Tel. +886221342451, Fax.+886221342874 Thailand: Tel. +6623617910, Fax.+6623983447

Turkey: Tel. +902165221500, Fax.+902165221813 Ukraine: Tel. +380442642776, Fax.+380442680461

United Kingdom: Tel. +442087305000, Fax.+442087548421 United States: Tel. +18002347381

Uruguay: see South America

Vietnam: see Singapore

Yugoslavia: Tel. +381113341299, Fax.+381113342553

For all other countries apply to: Philips Semiconductors, Marketing Communications,

Building BE, P.O.Box218, 5600MD EINDHOVEN,

The Netherlands,Fax.+31402724825Internet:https://www.360docs.net/doc/5515042653.html, (SCA70)

? Philips Electronics N.V. 2000.Printed in The Netherlands

All rights are reserved.Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

Contents

1Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14Pinning information . . . . . . . . . . . . . . . . . . . . . . 15Quick reference data . . . . . . . . . . . . . . . . . . . . . 26Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . 27Thermal characteristics . . . . . . . . . . . . . . . . . . . 47.1Transient thermal impedance. . . . . . . . . . . . . . 48Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 59Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 910Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1111Revision history . . . . . . . . . . . . . . . . . . . . . . . . 1212Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 1313Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1314

Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

相关主题
相关文档
最新文档