HI1396Y中文资料
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.S E M I C O N D U C T O R
HI1396Y
8-Bit, 125 MSPS Flash A/D Converter
Description
The HI1396Y is an 8-bit ultra high speed ?ash analog-to-dig-ital converter IC capable of digitizing analog signals at the maximum rate of 125MSPS. The digital I/O levels of the con-verter are compatible with ECL 100K/10KH/10K.
The HI1396Y is available for Commercial and Industrial applications and is supplied in die form.
Ordering Information
PART NUMBER TEMPERATURE
PACKAGE
HI1396Y
+25o C
Die
?All performance parameters are for packaged devices when supplied by Harris.
Features
?Differential Linearity Error . . . .±0.5 LSB (Typ) or Less ?Integral Linearity Error . . . . . . . .±0.5 LSB (Typ) or Less ?Built-In Integral Linearity Compensation Circuit ?Ultra High Speed Operation with Maximum Conversion Rate of 125 MSPS (Min)
?Low Input Capacitance . . . . . . . . . . . . . . . . .18pF (Typ)?Wide Analog Input Bandwidth 200MHz (Min. for Full-Scale Input)
?Single Power Supply. . . . . . . . . . . . . . . . . . . . . . . .-5.2V ?Low Power Consumption . . . . . . . . . . . . .870mW (Typ)?Low Error Rate
?Operable at 50% Clock Duty Cycle ?
Capable of Driving 50? Loads
Applications
?Video Digitizing ?Communication Systems ?HDTV (High De?nition TV)?Radar Systems
?Direct RF Down-Conversion ?Digital Oscilloscopes
April 1995
File Number
3954
Die Metallization Layer
PIN PIN 661
HI1396Y
Functional Block Diagram
255
254
R/2
R
R
R3
193
R
191
R
192
R
129
R
128
R
127
R
126
R
R2
V RM
V IN
V RB CLOCK DRIVER
65
R
63
R
64
R
2
R
1
V IN
R
R/2V RT
R1
COMPARATOR
MINV
ENCODE LOGIC
LINV
OUTPUT
D7 (MSB)
D6
D5
D4D3
D2D1D0 (LSB)
CLK CLK
Speci?cations HI1396Y Absolute Maximum Ratings T A = +25o C
Supply Voltage (AV EE, DV EE). . . . . . . . . . . . . . . . . . . . . . . . . . . .-7V Analog Input Voltage (V IN) . . . . . . . . . . . . . . . . . . . . .-2.7V to +0.5V Reference Input Voltage
V RT, V RB, V RM. . . . . . . . . . . . . . . . . . . . . . . . . . . . .-2.7V to +0.5V |V RT-V RB|. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2.5V Digital Input Voltage
CLK,CLK, MINV, LINV. . . . . . . . . . . . . . . . . . . . . . .-4V to +0.5V |CLK-CLK| . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2.7V V RM Pin Input Current (I VRM) . . . . . . . . . . . . . . . . . . .-3mA to +3mA Digital Output Current (ID0 to ID7) . . . . . . . . . . . . . . .-30mA to 0mA Storage Temperature Range (T STG). . . . . . . . . . . .-65o C to +150o C Maximum Junction Temperature
HI1396YJP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+150o C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speci?cation is not implied.
Operating Conditions (Note 1)
Supply Voltage
AV EE, DV EE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-5.5V to -4.95V AV EE - DV EE . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.05V to 0.05V AGND - DGND . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.05V to 0.05V Reference Input Voltage
V RT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.1V to 0.1V V RB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-2.2V to -1.8V Analog Input Voltage, V IN . . . . . . . . . . . . . . . . . . . . . . . .V RB to V RT Pulse Width of Clock
TPW1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.0ns Min. TPW0. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.0ns Min.
Electrical Speci?cations T A = +25o C, AV EE = DV EE = -5.2V, V RT = 0V, V RB = -2V
PARAMETER TEST CONDITIONS MIN MAX UNIT Differential Linearity Error (DNL)-0.50.5LSB Integral Linearity Error (INL)-0.50.5LSB Resolution8-Bits Input Bias Current, L IN V IN = -1.0V0300μA Analog Input Resistance, R IN V IN = -1.0V60500k?Resister-String Current, I REF-22-16mA Reference Voltage, V RM-1.02-0.98V Digital Input Current HI, I IH Hi = -0.8V050μA Digital Input Current LO, I IL Lo = -1.6V-5050μA CLK Open Voltage, V OPN CLK = Open-1.4-1.2V Leakage (1) D0 to D7, V LEAK I = -10μA-0.8-0.4V Leakage (2) D0 to D7,
VIN, LINV, MINV, CLK,CLK, I LEAK
V = 0.3V-1.0 1.0μA Digital Output Voltage HI, V OH220? to -5.2V-1.095-0.6V Digital Output Voltage LO, V OL220? to -5.2V-2-1.64V Supply Current, I EE-220-105mA
Timing Diagram
FIGURE 1.
Pad Descriptions
PAD NUMBER SYMBOL I/O STANDARD VOLTAGE LEVEL
EQUIVALENT CIRCUIT DESCRIPTION
50, 53,55, 58AGND
-
0V
Analog GND. Used as GND for in-put buffers and latches of compara-tors. Isolated from DGND.
47, 48,60, 61AV EE
--5.2V
Analog V EE -5.2V (Typ.). Internally connected to DV EE (Resistance: 4?to 6?). Bypass with 0.1μF to AGND.39CLK I ECL
CLK Input
38
CLK
Input complementary to CLK. When left open pulled down to -1.3V. De-vice is operable without CLK input,but use of complementary inputs of CLK and CLK is recommended to obtain stable high speed operation.
9, 11,27, 29DGND -0V Digital GND.
8, 30
DV EE
-
-5.2V
Digital V EE . Internally connected to AV EE (resistance:4? to 6?). By-pass with 0.1μF to DGND
N
N + 1
N + 2
N + 1N
N - 120%
80%
T R
T OD
T F
T PW1
T PW0
20%
80%ANALOG IN CLK CLK
DIGITAL OUT
DV EE
CLK CLK
DGND1
R
R R
R
R R
12D0O ECL LSB of data outputs. External pull-
down resistor is required.
13D1Data outputs. External pull-down re-
sistors are required.
15D2
16D3
21D4
24D5
25D6
26D7MSB of data outputs. External pull-
down resistor is required.
1LINV I ECL Input for D0 (LSB) to D6 output po-
larity inversion (see A/D Output
Code Table). Pulled low when left
open.
35MINV I ECL Input for D7 (MSB) output polarity
inversion (see A/D Output Code Ta-
ble). Pulled low when left open.
51, 52, 56, 57V IN I V RT to V RB Analog input pads. These two pads
must be connected externally, since
they are not internally connected.
PAD
NUMBER SYMBOL I/O STANDARD
VOLTAGE
LEVEL EQUIVALENT CIRCUIT DESCRIPTION
DV EE
DGND2
DI
R
R
R
R
-1.3V
DV EE
DGND1
LINV
OR
MINV
V IN
V IN
AV EE
AGND
46
V RB
I
-2V
Reference voltage (bottom). Typi-cally -2V. Bypass with a 0.1μF and 10μF to AGND.
54V RM I V RB /2Reference voltage mid point. Can be used as a pad for integral linear-ity compensation. Reference volt-age (top) typically 0V. When a voltage different from AGND is ap-plied to this pad, bypass with a 0.1μF and 10μF to AGND.
62
V RT
I
0V
2 - 7, 10,14, 17 - 20,22, 23, 28,31 - 34, 36,37, 40 - 45,49, 59,6
3 - 66
NC --
Unused pads. No internal connec-tions have been made to these pads. Connecting them to AGND or DGND is recommended.
A/D OUTPUT CODE TABLE
V IN (Note 1)
STEP
MINV 1, LINV 1
0, 1
1, 0
0, 0
D7
D0
D7
D0
D7
D0
D7
D0
0V
000 ? ? ? ? ? 00100 ? ? ? ? ? 00011 ? ? ? ? ? 11111 ? ? ? ? ? 110000 ? ? ? ? ? 00100 ? ? ? ? ? 00011 ? ? ? ? ? 11111 ? ? ? ? ? 111000 ? ? ? ? ? 01
100 ? ? ? ? ? 01
011 ? ? ? ? ? 10
111 ? ? ? ? ? 10
???
?????????-1V 127011 ? ? ? ? ? 11111 ? ? ? ? ? 11000 ? ? ? ? ? 00100 ? ? ? ? ? 00128
100 ? ? ? ? ? 00
000 ? ? ? ? ? 00
111 ? ? ? ? ? 11
011 ? ? ? ? ? 11
???
?????????254111 ? ? ? ? ? 10011 ? ? ? ? ? 10100 ? ? ? ? ? 01000 ? ? ? ? ? 01255
111 ? ? ? ? ? 11011 ? ? ? ? ? 11100 ? ? ? ? ? 00000 ? ? ? ? ? 00-2V 111 ? ? ? ? ? 11
011 ? ? ? ? ? 11
100 ? ? ? ? ? 00
000 ? ? ? ? ? 00
NOTE:
1.V RT = 0V, V RB = -2V.
PAD NUMBER
SYMBOL I/O STANDARD VOLTAGE LEVEL
EQUIVALENT CIRCUIT
DESCRIPTION
R
R
R
V RT
R/2
R1
COMPARATOR 1COMPARATOR 2COMPARATOR 127
R
COMPARATOR 128R2
V RM
R
COMPARATOR 129R
COMPARATOR 130R
COMPARATOR 255
R/2
V RB
R3
Pad Coordinates PAD COORDINATE 1
PAD NO.
PAD
NAME X [μm]Y[μm]
1LINV2198.404490.40 22008.004490.40 31817.604490.40 41627.204490.40 51436.804490.40 61246.404490.40 71056.004490.40 8DV EE865.604490.40 9DGND675.204490.40 10388.804490.40 11DGND209.604311.20 12D0209.603730.40 13D1209.603540.00 14209.603349.60 15D2209.603159.20 16D3209.602968.80 17209.602778.40 18209.602629.60 19209.602458.40 20209.602301.60 21D4209.602111.20 22209.601920.80
453545.60215.20
46V RB3736.00215.20
47AV EE3926.40215.20
48AV EE4075.20215.20
494377.60215.20
50AGND4377.601292.00
51V IN4377.601570.40
52V IN4377.601720.80
53AGND4377.601999.20
54V RM4377.602352.80
55AGND4377.602698.40
56V IN4377.602984.80
57V IN4377.603135.20
58AGND4377.603413.60
594377.604490.40
60AV EE4075.204490.40
61AV EE3926.404490.40
62V RT3736.004490.40
633545.604490.40
643164.804490.40
652728.004490.40
662579.204490.40
PAD
NO.
PAD
NAME X [μm]Y[μm] 23209.601730.40
24D5209.601540.00
25D6209.601349.60
26D7209.601159.20
27DGND209.60588.00
28209.60362.40
29DGND484.80215.20
30DV EE675.20215.20
31865.60215.20
321056.00215.20
331246.40215.20
341436.80215.20
35MINV1627.20215.20
361817.60215.20
372008.00215.20
38CLK2198.40215.20
39CLK2388.80215.20
402579.20215.20
412728.00215.20
422974.40215.20
433164.80215.20
443355.20215.20
PAD
NO.
PAD
NAME X [μm]Y[μm]
Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or speci?cations at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries. Sales Of?ce Headquarters
For general information regarding Harris Semiconductor and its products, call1-800-4-HARRIS
UNITED STATES
Harris Semiconductor
P. O. Box 883, Mail Stop 53-210 Melbourne, FL32902
TEL: 1-800-442-7747
(407) 729-4984
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Mercure Center
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TEL: (32) 2-724-2111
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Cencon 1, #09-01
Singapore 1334
TEL: (65) 748-4200
FAX: (65) 748-0400 S E M I C O N D U C T O R
Pad Coordinates(Continued) PAD COORDINATE 2
PAD NO.
PAD
NAME X [μm]Y[μm]
1LINV2158.404450.40 21968.004450.40 31777.604450.40 41587.204450.40 51396.804450.40 61206.404450.40 71016.004450.40 8DV EE825.604450.40 9DGND635.204450.40 10348.804450.40 11DGND169.605271.20 12D0169.603690.40 13D1169.603500.00 14169.603309.60 15D2169.603119.20 16D3169.602928.80 17169.602738.40 18169.602589.60 19169.602418.40 20169.602261.60 21D4169.602071.20 22169.601880.80
453505.60175.20
46V RB3696.00175.20
47AV EE3886.40175.20
48AV EE4035.20175.20
494337.60175.20
50AGND4337.601252.00
51V IN4337.601530.40
52V IN4337.601680.80
53AGND4337.601959.20
54V RM4337.602312.80
55AGND4337.602658.40
56V IN4337.602944.80
57V IN4337.603095.20
58AGND4337.603373.60
594337.604450.40
60AV EE4035.204450.40
61AV EE3886.404450.40
62V RT3696.004450.40
633505.604450.40
643124.804450.40
652688.004450.40
662539.204450.40
PAD
NO.
PAD
NAME X [μm]Y[μm] 23169.601690.40
24D5169.601500.00
25D6169.601309.60
26D7169.601119.20
27DGND169.60548.00
28169.60322.40
29DGND444.80175.20
30DV EE635.20175.20
31825.60175.20
321016.00175.20
331206.40175.20
341396.80175.20
35MINV1587.20175.20
361777.60175.20
371968.00175.20
38CLK2158.40175.20
39CLK2348.80175.20
402539.20175.20
412688.00175.20
422934.40175.20
433124.80175.20
443315.20175.20
PAD
NO.
PAD
NAME X [μm]Y[μm]