HI1396Y中文资料

HI1396Y中文资料
HI1396Y中文资料

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.S E M I C O N D U C T O R

HI1396Y

8-Bit, 125 MSPS Flash A/D Converter

Description

The HI1396Y is an 8-bit ultra high speed ?ash analog-to-dig-ital converter IC capable of digitizing analog signals at the maximum rate of 125MSPS. The digital I/O levels of the con-verter are compatible with ECL 100K/10KH/10K.

The HI1396Y is available for Commercial and Industrial applications and is supplied in die form.

Ordering Information

PART NUMBER TEMPERATURE

PACKAGE

HI1396Y

+25o C

Die

?All performance parameters are for packaged devices when supplied by Harris.

Features

?Differential Linearity Error . . . .±0.5 LSB (Typ) or Less ?Integral Linearity Error . . . . . . . .±0.5 LSB (Typ) or Less ?Built-In Integral Linearity Compensation Circuit ?Ultra High Speed Operation with Maximum Conversion Rate of 125 MSPS (Min)

?Low Input Capacitance . . . . . . . . . . . . . . . . .18pF (Typ)?Wide Analog Input Bandwidth 200MHz (Min. for Full-Scale Input)

?Single Power Supply. . . . . . . . . . . . . . . . . . . . . . . .-5.2V ?Low Power Consumption . . . . . . . . . . . . .870mW (Typ)?Low Error Rate

?Operable at 50% Clock Duty Cycle ?

Capable of Driving 50? Loads

Applications

?Video Digitizing ?Communication Systems ?HDTV (High De?nition TV)?Radar Systems

?Direct RF Down-Conversion ?Digital Oscilloscopes

April 1995

File Number

3954

Die Metallization Layer

PIN PIN 661

HI1396Y

Functional Block Diagram

255

254

R/2

R

R

R3

193

R

191

R

192

R

129

R

128

R

127

R

126

R

R2

V RM

V IN

V RB CLOCK DRIVER

65

R

63

R

64

R

2

R

1

V IN

R

R/2V RT

R1

COMPARATOR

MINV

ENCODE LOGIC

LINV

OUTPUT

D7 (MSB)

D6

D5

D4D3

D2D1D0 (LSB)

CLK CLK

Speci?cations HI1396Y Absolute Maximum Ratings T A = +25o C

Supply Voltage (AV EE, DV EE). . . . . . . . . . . . . . . . . . . . . . . . . . . .-7V Analog Input Voltage (V IN) . . . . . . . . . . . . . . . . . . . . .-2.7V to +0.5V Reference Input Voltage

V RT, V RB, V RM. . . . . . . . . . . . . . . . . . . . . . . . . . . . .-2.7V to +0.5V |V RT-V RB|. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2.5V Digital Input Voltage

CLK,CLK, MINV, LINV. . . . . . . . . . . . . . . . . . . . . . .-4V to +0.5V |CLK-CLK| . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2.7V V RM Pin Input Current (I VRM) . . . . . . . . . . . . . . . . . . .-3mA to +3mA Digital Output Current (ID0 to ID7) . . . . . . . . . . . . . . .-30mA to 0mA Storage Temperature Range (T STG). . . . . . . . . . . .-65o C to +150o C Maximum Junction Temperature

HI1396YJP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+150o C

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speci?cation is not implied.

Operating Conditions (Note 1)

Supply Voltage

AV EE, DV EE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-5.5V to -4.95V AV EE - DV EE . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.05V to 0.05V AGND - DGND . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.05V to 0.05V Reference Input Voltage

V RT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.1V to 0.1V V RB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-2.2V to -1.8V Analog Input Voltage, V IN . . . . . . . . . . . . . . . . . . . . . . . .V RB to V RT Pulse Width of Clock

TPW1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.0ns Min. TPW0. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.0ns Min.

Electrical Speci?cations T A = +25o C, AV EE = DV EE = -5.2V, V RT = 0V, V RB = -2V

PARAMETER TEST CONDITIONS MIN MAX UNIT Differential Linearity Error (DNL)-0.50.5LSB Integral Linearity Error (INL)-0.50.5LSB Resolution8-Bits Input Bias Current, L IN V IN = -1.0V0300μA Analog Input Resistance, R IN V IN = -1.0V60500k?Resister-String Current, I REF-22-16mA Reference Voltage, V RM-1.02-0.98V Digital Input Current HI, I IH Hi = -0.8V050μA Digital Input Current LO, I IL Lo = -1.6V-5050μA CLK Open Voltage, V OPN CLK = Open-1.4-1.2V Leakage (1) D0 to D7, V LEAK I = -10μA-0.8-0.4V Leakage (2) D0 to D7,

VIN, LINV, MINV, CLK,CLK, I LEAK

V = 0.3V-1.0 1.0μA Digital Output Voltage HI, V OH220? to -5.2V-1.095-0.6V Digital Output Voltage LO, V OL220? to -5.2V-2-1.64V Supply Current, I EE-220-105mA

Timing Diagram

FIGURE 1.

Pad Descriptions

PAD NUMBER SYMBOL I/O STANDARD VOLTAGE LEVEL

EQUIVALENT CIRCUIT DESCRIPTION

50, 53,55, 58AGND

-

0V

Analog GND. Used as GND for in-put buffers and latches of compara-tors. Isolated from DGND.

47, 48,60, 61AV EE

--5.2V

Analog V EE -5.2V (Typ.). Internally connected to DV EE (Resistance: 4?to 6?). Bypass with 0.1μF to AGND.39CLK I ECL

CLK Input

38

CLK

Input complementary to CLK. When left open pulled down to -1.3V. De-vice is operable without CLK input,but use of complementary inputs of CLK and CLK is recommended to obtain stable high speed operation.

9, 11,27, 29DGND -0V Digital GND.

8, 30

DV EE

-

-5.2V

Digital V EE . Internally connected to AV EE (resistance:4? to 6?). By-pass with 0.1μF to DGND

N

N + 1

N + 2

N + 1N

N - 120%

80%

T R

T OD

T F

T PW1

T PW0

20%

80%ANALOG IN CLK CLK

DIGITAL OUT

DV EE

CLK CLK

DGND1

R

R R

R

R R

12D0O ECL LSB of data outputs. External pull-

down resistor is required.

13D1Data outputs. External pull-down re-

sistors are required.

15D2

16D3

21D4

24D5

25D6

26D7MSB of data outputs. External pull-

down resistor is required.

1LINV I ECL Input for D0 (LSB) to D6 output po-

larity inversion (see A/D Output

Code Table). Pulled low when left

open.

35MINV I ECL Input for D7 (MSB) output polarity

inversion (see A/D Output Code Ta-

ble). Pulled low when left open.

51, 52, 56, 57V IN I V RT to V RB Analog input pads. These two pads

must be connected externally, since

they are not internally connected.

PAD

NUMBER SYMBOL I/O STANDARD

VOLTAGE

LEVEL EQUIVALENT CIRCUIT DESCRIPTION

DV EE

DGND2

DI

R

R

R

R

-1.3V

DV EE

DGND1

LINV

OR

MINV

V IN

V IN

AV EE

AGND

46

V RB

I

-2V

Reference voltage (bottom). Typi-cally -2V. Bypass with a 0.1μF and 10μF to AGND.

54V RM I V RB /2Reference voltage mid point. Can be used as a pad for integral linear-ity compensation. Reference volt-age (top) typically 0V. When a voltage different from AGND is ap-plied to this pad, bypass with a 0.1μF and 10μF to AGND.

62

V RT

I

0V

2 - 7, 10,14, 17 - 20,22, 23, 28,31 - 34, 36,37, 40 - 45,49, 59,6

3 - 66

NC --

Unused pads. No internal connec-tions have been made to these pads. Connecting them to AGND or DGND is recommended.

A/D OUTPUT CODE TABLE

V IN (Note 1)

STEP

MINV 1, LINV 1

0, 1

1, 0

0, 0

D7

D0

D7

D0

D7

D0

D7

D0

0V

000 ? ? ? ? ? 00100 ? ? ? ? ? 00011 ? ? ? ? ? 11111 ? ? ? ? ? 110000 ? ? ? ? ? 00100 ? ? ? ? ? 00011 ? ? ? ? ? 11111 ? ? ? ? ? 111000 ? ? ? ? ? 01

100 ? ? ? ? ? 01

011 ? ? ? ? ? 10

111 ? ? ? ? ? 10

???

?????????-1V 127011 ? ? ? ? ? 11111 ? ? ? ? ? 11000 ? ? ? ? ? 00100 ? ? ? ? ? 00128

100 ? ? ? ? ? 00

000 ? ? ? ? ? 00

111 ? ? ? ? ? 11

011 ? ? ? ? ? 11

???

?????????254111 ? ? ? ? ? 10011 ? ? ? ? ? 10100 ? ? ? ? ? 01000 ? ? ? ? ? 01255

111 ? ? ? ? ? 11011 ? ? ? ? ? 11100 ? ? ? ? ? 00000 ? ? ? ? ? 00-2V 111 ? ? ? ? ? 11

011 ? ? ? ? ? 11

100 ? ? ? ? ? 00

000 ? ? ? ? ? 00

NOTE:

1.V RT = 0V, V RB = -2V.

PAD NUMBER

SYMBOL I/O STANDARD VOLTAGE LEVEL

EQUIVALENT CIRCUIT

DESCRIPTION

R

R

R

V RT

R/2

R1

COMPARATOR 1COMPARATOR 2COMPARATOR 127

R

COMPARATOR 128R2

V RM

R

COMPARATOR 129R

COMPARATOR 130R

COMPARATOR 255

R/2

V RB

R3

Pad Coordinates PAD COORDINATE 1

PAD NO.

PAD

NAME X [μm]Y[μm]

1LINV2198.404490.40 22008.004490.40 31817.604490.40 41627.204490.40 51436.804490.40 61246.404490.40 71056.004490.40 8DV EE865.604490.40 9DGND675.204490.40 10388.804490.40 11DGND209.604311.20 12D0209.603730.40 13D1209.603540.00 14209.603349.60 15D2209.603159.20 16D3209.602968.80 17209.602778.40 18209.602629.60 19209.602458.40 20209.602301.60 21D4209.602111.20 22209.601920.80

453545.60215.20

46V RB3736.00215.20

47AV EE3926.40215.20

48AV EE4075.20215.20

494377.60215.20

50AGND4377.601292.00

51V IN4377.601570.40

52V IN4377.601720.80

53AGND4377.601999.20

54V RM4377.602352.80

55AGND4377.602698.40

56V IN4377.602984.80

57V IN4377.603135.20

58AGND4377.603413.60

594377.604490.40

60AV EE4075.204490.40

61AV EE3926.404490.40

62V RT3736.004490.40

633545.604490.40

643164.804490.40

652728.004490.40

662579.204490.40

PAD

NO.

PAD

NAME X [μm]Y[μm] 23209.601730.40

24D5209.601540.00

25D6209.601349.60

26D7209.601159.20

27DGND209.60588.00

28209.60362.40

29DGND484.80215.20

30DV EE675.20215.20

31865.60215.20

321056.00215.20

331246.40215.20

341436.80215.20

35MINV1627.20215.20

361817.60215.20

372008.00215.20

38CLK2198.40215.20

39CLK2388.80215.20

402579.20215.20

412728.00215.20

422974.40215.20

433164.80215.20

443355.20215.20

PAD

NO.

PAD

NAME X [μm]Y[μm]

Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or speci?cations at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries. Sales Of?ce Headquarters

For general information regarding Harris Semiconductor and its products, call1-800-4-HARRIS

UNITED STATES

Harris Semiconductor

P. O. Box 883, Mail Stop 53-210 Melbourne, FL32902

TEL: 1-800-442-7747

(407) 729-4984

FAX: (407) 729-5321EUROPE

Harris Semiconductor

Mercure Center

100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2-724-2111

ASIA

Harris Semiconductor PTE Ltd.

No. 1 Tannery Road

Cencon 1, #09-01

Singapore 1334

TEL: (65) 748-4200

FAX: (65) 748-0400 S E M I C O N D U C T O R

Pad Coordinates(Continued) PAD COORDINATE 2

PAD NO.

PAD

NAME X [μm]Y[μm]

1LINV2158.404450.40 21968.004450.40 31777.604450.40 41587.204450.40 51396.804450.40 61206.404450.40 71016.004450.40 8DV EE825.604450.40 9DGND635.204450.40 10348.804450.40 11DGND169.605271.20 12D0169.603690.40 13D1169.603500.00 14169.603309.60 15D2169.603119.20 16D3169.602928.80 17169.602738.40 18169.602589.60 19169.602418.40 20169.602261.60 21D4169.602071.20 22169.601880.80

453505.60175.20

46V RB3696.00175.20

47AV EE3886.40175.20

48AV EE4035.20175.20

494337.60175.20

50AGND4337.601252.00

51V IN4337.601530.40

52V IN4337.601680.80

53AGND4337.601959.20

54V RM4337.602312.80

55AGND4337.602658.40

56V IN4337.602944.80

57V IN4337.603095.20

58AGND4337.603373.60

594337.604450.40

60AV EE4035.204450.40

61AV EE3886.404450.40

62V RT3696.004450.40

633505.604450.40

643124.804450.40

652688.004450.40

662539.204450.40

PAD

NO.

PAD

NAME X [μm]Y[μm] 23169.601690.40

24D5169.601500.00

25D6169.601309.60

26D7169.601119.20

27DGND169.60548.00

28169.60322.40

29DGND444.80175.20

30DV EE635.20175.20

31825.60175.20

321016.00175.20

331206.40175.20

341396.80175.20

35MINV1587.20175.20

361777.60175.20

371968.00175.20

38CLK2158.40175.20

39CLK2348.80175.20

402539.20175.20

412688.00175.20

422934.40175.20

433124.80175.20

443315.20175.20

PAD

NO.

PAD

NAME X [μm]Y[μm]

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