SPW20N60C3

Cool MOS? Power Transistor

V DS @ T jmax 650V

R DS(on)0.19?I D

20.7

Feature

? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme d v /d t rated ? High peak current capability ? Improved transconductance

P-TO247

Type

Package Ordering Code SPW20N60C3

P-TO247Q67040-S4406Marking 20N60C3

Maximum Ratings Parameter

Symbol Value

Unit

Continuous drain current T C = 25 °C T C = 100 °C

I D

20.713.1

Pulsed drain current, t p limited by T jmax I D puls 62.1Avalanche energy, single pulse I D = 10 A, V DD = 50 V

E AS

690mJ

Avalanche energy, repetitive t AR limited by T jmax 1)I D = 20 A, V DD = 50 V

E AR 1Avalanche current, repetitive t AR limited by T jmax I AR 20A Reverse diode d v /d t I S =20.7A, V DS =480V, T j =125°C

d v /d t

6V/ns Gate source voltage static

V GS ±20V Gate source voltage AC (f >1Hz)V GS ±30

Power dissipation, T C = 25°C P tot 208W Operating and storage temperature

T j , T stg

-55... +150

°C

Maximum Ratings

Parameter Symbol Value Unit Drain Source voltage slope

V DS = 480 V, I D = 20.7 A, T j = 125 °C

d v/d t50V/ns

Thermal Characteristics

Parameter Symbol Values Unit

min.typ.max. Thermal resistance, junction - case R thJC --0.6K/W Thermal resistance, junction - ambient, leaded R thJA--62 Soldering temperature,

1.6 mm (0.063 in.) from case for 10s

T sold --260°C

Electrical Characteristics, at T j=25°C unless otherwise specified

Parameter Symbol Conditions Values Unit

min.typ.max.

Drain-source breakdown voltage V(BR)DSS V GS=0V, I D=0.25mA600--V Drain-Source avalanche

breakdown voltage

V(BR)DS V GS=0V, I D=20A-700-

Gate threshold voltage V GS(th)I D=1000μΑ, V GS=V DS 2.13 3.9

Zero gate voltage drain current I DSS V DS=600V, V GS=0V,

T j=25°C, T j=150°C -

0.5

250

μA

Gate-source leakage current I GSS V GS=30V, V DS=0V--100nA Drain-source on-state resistance R DS(on)V GS=10V, I D=13.1A,

T j=25°C T j=150°C -

0.16

0.43

0.19

Gate input resistance R G f=1MHz, open Drain-0.54-

Electrical Characteristics , at T j = 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min.typ.max. Transconductance g fs V DS≥2*I D*R DS(on)max,

I D=13.1A

-17.5-S

Input capacitance C iss V GS=0V, V DS=25V,

f=1MHz -2400-pF

Output capacitance C oss-780-Reverse transfer capacitance C rss-50-

Effective output capacitance,2) energy related C o(er)V GS=0V,

V DS=0V to 480V

-83-pF

Effective output capacitance,3)

time related

C o(tr)-160-

Turn-on delay time t d(on)V DD=380V, V GS=0/13V,

I D=20.7A, R G=3.6?,

T j=125

-10-ns

Rise time t r V DD=380V, V GS=0/13V,

I D=20.7A, R G=3.6?-5-

Turn-off delay time t d(off)-67100

Fall time t f- 4.512

Gate Charge Characteristics

Gate to source charge Q gs V DD=480V, I D=20.7A-11-nC Gate to drain charge Q gd-33-

Gate charge total Q g V DD=480V, I D=20.7A,

V GS=0 to 10V

-87114

Gate plateau voltage V(plateau)V DD=480V, I D=20.7A- 5.5-V

1Repetitve avalanche causes additional power losses that can be calculated as P

AV=E AR*f.

o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 3C

o(tr)

is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.

Electrical Characteristics, at T j = 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min.typ.max. Inverse diode continuous

forward current

I S T C=25°C--20.7A

Inverse diode direct current,

pulsed

I SM--62.1 Inverse diode forward voltage V SD V GS=0V, I F=I S-1 1.2V

Reverse recovery time t rr V R=480V, I F=I S ,

d i F/d t=100A/μs -500800ns

Reverse recovery charge Q rr-11-μC Peak reverse recovery current I rrm-70-A Peak rate of fall of reverse

recovery current

di rr/dt-1400-A/μs

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit

typ.typ.

Thermal resistance

R th10.00769K/W R th20.015

R th30.029

R th40.114

R th50.136

R th60.059Thermal capacitance

C th10.0003763Ws/K C th20.001411

C th30.001931

C th40.005297

C th50.012

C th60.091

1 Power dissipation P tot = f (T C)

2 Safe operating area

I D = f ( V DS )

parameter : D = 0 , T

C=25°C

3 Transient thermal impedance

Z thJC = f

(t p)

parameter: D = t p/T

K/W

4 Typ. output characteristic

I D = f (V DS); T j=25°C

parameter: t

p = 10 μs, V GS

5 Typ. output characteristic

I D = f (V DS); T j=150°C parameter: t p = 10 μs, V GS

6 Typ. drain-source on resistance

R DS(on)=f(I D)

parameter: T j=150°C, V GS

(

)

7 Drain-source on-state resistance

R DS(on) = f (T j)

parameter : I D = 13.1 A, V GS = 10 V

SPW20N60C3

(

)

8 Typ. transfer characteristics

I D= f ( V GS ); V DS≥ 2 x I D x R DS(on)max

parameter: t p = 10 μs

9 Typ. gate charge V GS= f (Q Gate) parameter: I

= 20.7 A pulsed

10 Forward characteristics of body diode

I F = f (V SD)

parameter: T

, t p = 10 μs

11 Typ. drain current slope

d i/d t = f(R G), inductiv

e load, T j = 125°C

par.: V DS=380V, V GS=0/+13V, I D=20.7A

A/μs

12 Typ. switching time

t = f (R G), inductive load, T j=125°C

par.: V DS=380V, V GS=0/+13V, I D=20.7 A

13 Typ. switching time

t = f (I D ), inductive load, T j =125°C par.: V DS =380V, V GS =0/+13V, R G =3.6?

14 Typ. drain source voltage slope d v /d t = f(R G ), inductive load, T j = 125°C

par.: V DS =380V, V

GS =0/+13V, I D =20.7A

V/ns

d v /d t

15 Typ. switching losses E = f (I D ), inductive load, T j =125°C par.: V

DS =380V, V GS =0/+13V, R G =3.6?

mWs

16 Typ. switching losses E = f (R G ), inductive load, T j =125°C par.: V DS =380V, V

GS =0/+13V, I D =20.7A

mWs

17 Avalanche SOA I AR = f (t AR )par.: T j ≤ 150 °C

I A R

18 Avalanche energy E AS = f (T j )

par.: I D = 10 A, V DD = 50 V

E 19 Drain-source breakdown voltage V (BR)DSS = f (

T j )

SPW20N60C3

V (B R )D S S

20 Avalanche power losses P AR = f (f )

parameter: E AR =1mJ

P A R

21 Typ. capacitances

C = f (V DS)

parameter: V GS=0V, f=1 MHz

22 Typ. C oss stored energy

E oss=f(V DS)

E Definition of diodes switching characteristics

P-TO-247-3-1

General tolerance unless otherwise specified: Leadframe parts: ±0.05

Package parts: ±0.12

Published by

Infineon Technologies AG,

Bereichs Kommunikation

St.-Martin-Strasse 53,

D-81541 München

? Infineon Technologies AG 1999

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