2SA1707S-AN;2SC4487S-AN;2SC4487T-AN;中文规格书,Datasheet资料

PNP/NPN Epitaxial Planar Silicon Transistors

( ) : 2SA1707

Specifications

Absolute Maximum Ratings at Ta = 25?C

Electrical Characteristics at Ta = 25?C

Package Dimensions

unit:mm Features

· Adoption of FBET, MBIT processes. ·Large current capacity, wide ASO.

·Low collector-to-emitter saturation voltage. ·Fast switching speed.

e t e m a r a P l o b m y S s

n o i t i d n o C s

g n i t a R t i n U e g a t l o V e s a B -o t -r o t c e l l o C V O B C 06)–(V e g a t l o V r e t t i m E -o t -r o t c e l l o C V O E C 05)–(V e g a t l o V e s a B -o t -r e t t i m E V O B E 6)–(V t n e r r u C r o t c e l l o C I C 3)–(A )e s l u P (t n e r r u C r o t c e l l o C I P C 6)–(A n o i t a p i s s i D r o t c e l l o C P C 1W

e r u t a r e p m e T n o i t c n u J j T 0

51e

r u t a r e p m e T e g a r o t S g

t s T 0

51+o t 55–?C ?C

e t e m a r a P l o b m y S s

n o i t i d n o C s

g n i t a R t i n U n

i m p

y t x a m t n e r r u C f f o t u C r o t c e l l o C I O B C V B C I ,V 04)–(=E 0=1)–(A μt n e r r u C f f o t u C r e t t i m E I O B E V B E I ,V 4)–(=C 0=1)–(A

μn i a G t n e r r u C C D h E F 1V E C I ,V 2)–(=C A m 001)–(=*001*

004h E F 2V E C I ,V 2)–(=C A 3)–(=5

c u

d o r P h t d i w d n a B -n i a G f T

V E C I ,V 01)–(=C A

m 05)–(=0

51z

H M * : 2SA1707/2SC4487 are classified by 100mA h FE as follows :

Continued on next page.

k n a R R S T h E

F 0

02o t 0010

82o t 0410

04o t 002

分销商库存信息:

ONSEMI

2SA1707S-AN2SC4487S-AN2SC4487T-AN