NTHD5903T1中文资料

NTHD5903T1

Power MOSFET

Dual P-Channel ChipFET E

2.1 Amps, 20 Volts

Features

?Low R DS(on) for Higher Efficiency ?Logic Level Gate Drive

?Miniature ChipFET Surface Mount Package Saves Board Space

Applications

?Power Management in Portable and Battery–Powered Products; i.e.,

Cellular and Cordless Telephones and PCMCIA Cards

MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

Device Package Shipping ORDERING INFORMATION

NTHD5903T1

ChipFET

3000/T ape & Reel

https://www.360docs.net/doc/883327590.html,

THERMAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS(T = 25°C unless otherwise noted)

3.Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.

4.Guaranteed by design, not subject to production testing.

I D , D R A I N C U R R E N T (A M P S )

1

3

2

0R D S (o n ), D R A I N –T O –S O U R C E R E S I S T A N C E (W )

–50

–25

25

50

125

100

Figure 5. On–Resistance Variation with

Temperature T J , JUNCTION TEMPERATURE (°C)4

75

150

R D S (o n ), D R A I N –T O –S O U R C E R E S I S T A N C E (N O R M A L I Z E D )

4

8

20

16Figure 6. Drain–to–Source Leakage Current

vs. Voltage

–V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)

12

C , C A P A C I T A N C E (p F )

)10

1

10

1100

R G , GATE RESISTANCE (OHMS)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

t , T I M E (n s )

100

0.80 1.2V SD , SOURCE–TO–DRAIN VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage vs. Current

1

0.60.40.22

1

0.1

0.01

101010–4

–3

–2

–1101

10

100

600

Square Wave Pulse Duration (sec)

N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c e

Figure 11. Normalized Thermal Transient Impedance, Junction–to–Ambient

Notes

Notes

PACKAGE DIMENSIONS

ChipFET

CASE 1206A–03

ISSUE D

ChipFET is a trademark of Vishay Siliconix.

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