WMS128K8L-85DRCA中文资料

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HI-RELIABILITY PRODUCT

WMS128K8-XXX

s Commercial, Industrial and Military Temperature Range s 5 Volt Power Supply s Low Power CMOS

s 2V Data Retention Devices Available (Low Power Version)s TTL Compatible Inputs and Outputs

128Kx8 MONOLITHIC SRAM, SMD 5962-96691 (pending)

FEATURES

s Access Times 70, 85, 100, 120ns

s Revolutionary, Center Power/Ground Pinout JEDEC Approved

?32 lead Ceramic SOJ (Package 101)s Evolutionary, Corner Power/Ground Pinout JEDEC Approved

?32 pin Ceramic DIP (Package 300)?32 lead Ceramic SOJ (Package 101)?32 lead Ceramic Flat Pack (Package 206)s MIL-STD-883 Compliant Devices Available

EVOLUTIONARY PINOUT

REVOLUTIONARY PINOUT

A 0-16Address Inputs I/O 0-7Data Input/Output CS Chip Select OE Output Enable WE Write Enable V CC +5.0V Power GND

Ground

PIN DESCRIPTION

1234567891011121314151632313029282726252423222120191817NC A16A14A12A7A6A5A4A3A2A1A0I/O0I/O1I/O2GND

V CC A15

NC/CS2*WE A13A8A9A11OE A10CS I/O7I/O6I/O5I/O4I/O3

1234567891011121314151632313029282726252423222120191817A0A1A2A3CS I/O1I/O2V CC GND I/O3I/O4WE A4A5A6A7

A16A15A14A13OE I/O8I/O7GND V CC I/O6I/O5A12A11A10A9A8

32DIP

32CSOJ (DE)

32 FLATPACK (FE)

TOP VIEW

32 CSOJ (DR)

*NC for single chip select devices CS 2 for dual chip select devices

October 2000 Rev. 3

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Parameter Sym Conditions

-70

-85-100

-120

Units Min

Max Min Max

Min

Max Min

Max Input Leakage Current I LI V CC = 5.5, V IN = GND to V CC

1010

μA Output Leakage Current I LO CS = V IH , OE = V IH , V OUT = GND to V CC 10101010μA Operating Supply Current I CC CS = V IL , OE = V IH , f = 5MHz, Vcc = 5.530303030mA Standby Current I SB CS = V IH , OE = V IH , f = 5MHz, Vcc = 5.5 1.0 1.00.60.6mA Output Low Voltage V OL I OL = 2.1mA, Vcc = 4.50.4

0.4

V Output High Voltage

V OH

I OH = -1.0mA, Vcc = 4.5

2.4

2.4 2.4 2.4V

NOTE: DC test conditions: V IH = V CC -0.3V, V IL = 0.3V

RECOMMENDED OPERATING CONDITIONS

Parameter

Symbol Min Max Unit Operating Temperature T A -55+125°C Storage Temperature T STG -65+150°C Signal Voltage Relative to GND V G -0.5

Vcc+0.5V Junction Temperature T J 150°C Supply Voltage

V CC

-0.57.0

Parameter Symbol Min Max Unit Supply Voltage V CC 4.5 5.5V Input High Voltage V IH 2.2V CC + 0.3V Input Low Voltage

V IL

-0.5

+0.8

DC CHARACTERISTICS

(V CC = 5.0V, GND = 0V, T A = -55°C to +125°C)

DATA RETENTION CHARACTERISTICS

(T A = -55°C to +125°C)

CS OE WE Mode Data I/O Power H X X Standby High Z Standby L L H Read Data Out Active L H H Out Disable High Z Active L

Write

Data In

Active

Parameter Symbol

Conditions

-70-85-100-120Units

Min

Typ

Max Min Typ

Max Data Retention Supply Voltage V DR CS ≥ V CC -0.2V 2.0

5.5 2.0

5.5V Data Retention Current

I CCDR1

V CC = 3V

20400

μA

CAPACITANCE (T A = +25°C)

Parameter Symbol Condition Package

Speed (ns)Max Unit Input capacitance

C IN

V IN = 0V, f = 1.0MHz

32 Pin CSOJ, DIP,70 to 12012pF Flat Pack Evolutionary 32 Pin CSOJ Revolutionary

70 to 12020pF Output capicitance

C OUT

V OUT = 0V, f = 1.0MHz

32 Pin CSOJ, DIP,70 to 12012pF Flat Pack Evolutionary 32 Pin CSOJ Revolutionary

70 to 120

This parameter is guaranteed by design but not tested.

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Parameter Symbol

-70

-85

-100

-120

Units

Read Cycle Min Max

Min Max

Read Cycle Time t RC 70

100

120

ns Address Access Time

t AA 70

100

120ns Output Hold from Address Change t OH 3

ns Chip Select Access Time t ACS 7085100120ns Output Enable to Output Valid t OE 35

ns Chip Select to Output in Low Z t CLZ 15555ns Output Enable to Output in Low Z t OLZ 15

ns Chip Disable to Output in High Z t CHZ 125253535ns Output Disable to Output in High Z

t OHZ 1

ns 1. This parameter is guaranteed by design but not tested.

AC CHARACTERISTICS (V CC = 5.0V, T A = -55°C To +125°C)

Parameter Symbol

-70

-85

-100

-120

Units

Write Cycle Min Max

Min Max

Write Cycle Time

t WC 7085100120ns Chip Select to End of Write t CW 607580100ns Address Valid to End of Write t AW 607580100ns Data Valid to End of Write t DW 30354050ns Write Pulse Width t WP 50557080ns Address Setup Time t AS 0000ns Address Hold Time

t AH 5555ns Output Active from End of Write t OW 15

ns Write Enable to Output in High Z t WHZ 125

35ns Data Hold Time

t DH

ns 1. This parameter is guaranteed by design but not tested.

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LEAD FINISH:

Blank = Gold plated leads A =Solder dip leads DEVICE GRADE:M =Military Screened -55°C to +125°C I =Industrial -40°C to +85°C C =Commercial 0°C to +70°C

PACKAGE:

C = 32 Pin Ceramic .600" DIP (Package 300)

DE = 32 Lead Ceramic SOJ (Package 101) Evolutionary DR = 32 Lead Ceramic SOJ (Package 101) Revolutionary FE = 32 Lead Ceramic Flat Pack (Package 206)ACCESS TIME (ns)IMPROVEMENT MARK C = Dual Chip Select Device L = Low Power for 2V Data Retention ORGANIZATION, 128K x 8SRAM MONOLITHIC

WHITE MICROELECTRONICS

ORDERING INFORMATION

Parameter

Symbol Conditions

Units

Min

Max Data Retention Supply Voltage V DR CS ≥ V CC -0.2V 2.0

5.5V Data Retention Current

I CCDR3

V CC = 2V

400

μDATA RETENTION CHARACTERISTICS

(T A = -55°C to +125°C)

LOW POWER VERSION ONLY

W M S 128K 8 X - XXX X X X

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