RB500V-40中文资料

Diodes

Schottky barrier diode

RB500V-40

!Applications

Low current rectification

!Features

1) Small surface mounting type. (UMD2)2) Low I R . (I R =70nA Typ.)3) High reliability .

!Construction

Silicon epitaxial planar

!External dimensions (Units : mm)

!Absolute maximum ratings (T a = 25°C)

Parameter

Symbol Limits Unit Peak reverse voltage V RM V DC reverse voltage V R V Mean rectifying current I O 0.1A Peak forward surge current ?1A

125°C Storage temperature

°C

4540Junction temperature I FSM ?40~+125

Tj Tstg

? 60Hz for 1

!Electrical characteristics (T a = 25°C)

Note) ESD sensitive product handling required.

Parameter

Symbol Min.Typ.Max.Unit Conditions

Forward voltage V F ?0.45V I F =10mA Reverse current

I R ?1μA V R =10V

Capacitance between terminals

6.0

V R =10V, f =1MHz

C T

Diodes

!Electrical characteristic curves (T a = 25°C)

F O R W A R D C U R R E N T : I F (m A )

FORWARD VOLTAGE : V F (V)

Fig. 1 Forward characteristics

R E V E R S E C U R R E N T : R (μA )

REVERSE VOLTAGE : V R (V)Fig. 2 Reverse characteristics

1100

5101520253035

C A P A C I T A N C E B E T W E E N T E R M I N A L S : C T (p F )

REVERSE VOLTAGE : V R (V)

Fig. 3 Capacitance between

terminals characteristics

020406080100255075100125

I o C U R R E N T (%)

AMBIENT TEMPERATURE : Ta (°C )

Fig. 4 Derating curve

(mounting on glass epoxy PCBs)