60V50A扬效应管N沟道MOS资料

AP50N06 D

1

Absolute Maximum Ratings (T A =25°C unless otherwise noted)

Symbol Parameter Maximum Unit

V DSS Drain-to-Source Voltage 60 V

V GSS Gate-to-Source Voltage

±20 V

I D Continuous Drain Current

T C =25°C 60 A

T C =100°C 50 A

I DP Pulsed Drain Current T C =25°C 250 A IAS Avalanche Current 15 EAS Avalanche energy L =0.5mH 120 mJ

PD Maximum Power Dissipation T C =

25°C 62 W

T C =100°C 25

T J, T STG Junction & Storage Temperature Range -55~150 °C

Thermal Characteristics

Symbol Parameter

Typical Unit

R θjc Thermal Resistance-Junction to Case 2 ℃/W R θja Thermal Resistance-Junction to Ambient 75

? FEATURES

● 60V/50A

RDS(ON)= 18m ?@ VGS=10V ● Lead free and Green Device Available

? Application

● Load Switch

?PIN DESCRIPTION

６０Ｖ５０Ａ扬效应管Ｎ沟道ＭＯＳ

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Electrical Characteristics(TA=25°C unless otherwise noted)

Symbol Parameter

Test

Conditions Min.

Typ

Max.Unit Static Characteristics

BV DSS Drain-Source Breakdown Voltage V GS=0V,I D

=250uA 60 — — V V GS(th) Gate

Threshold

Voltage V DS=V GS,I D

=250uA 2 3 4 V

I DSS Zero Gate Voltage Drain Current V DS=48V,V GS

=0V — — 1

uA T J

=85°C— — 30

I D(ON)On Status Drain Current V DS=10V, V GS

=10V 50 A I GSS Gate Leakage Current V GS=±20V, V DS

=0V — — ±100nA

R DS(on)1 Drain-Source

On-Resistance V GS=10V, I D

=20A 15

18

m? —

Diode Characteristics

V SD1Diode Forward Voltage I SD=50A,V GS

=0V —

0.8

1.1

V

I S Diode Continuous Forward Current 50 A

t rr Reverse

Recovery

Time I F=20A,

dI/dt=100A/us — 28 ns

Q rr Reverse Recovery Charge — 24 nC Dynamic Characteristics2

R G Gate

Resistance V GS=0V, V DS=0V,

Frequency=1MHz

— 1.4 — ?

C iss Input

Capacitance

V GS=0V, V DS=20V

Frequency=1MHz — 2068

pF

C oss Output

Capacitance — 200 C rss Reverse

Transfer

Capacitance — 150

t d(on) Turn-On

Delay

Time

V DD=20V, R L=20?

I D=1A, V GS=10V

R G=6?— 14

ns

t r Turn-On

Rise

Time — 13 t d(off) Turn-Off

Delay

Time — 20 t f Turn-Off

Fall

Time — 7.2 Gate Charge Characteristics2

Q g Total Gate Charge

V DS=20V,V GS=10V

I D=20A — 51

nC

Q gs Gate-to-Source

Charge — 11 Q gd Gate-to-Drain

Charge — 17 Note: 1: Pulse test; pulse width ≦ 300ns, duty cycle ≦ 2%.

2: Guaranteed by design, not subject to production testing.

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2

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Typical Operating Characteristics

3

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Typical Operating Characteristics

4

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Typical Operating Characteristics

5

6

Package Information

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