V23990-K249-A-14
Parameter Condition Symbol Values Unit
max.
Input Rectifier Bridge
Gleichrichter
Repetitive peak reverse voltage V RRM1600V Periodische Rückw. Spitzensperrspannung
Forward current per diode DC current T
h =80°C;I
FAV
58A
Dauergrenzstrom Tc=80°C80
Surge forward current t p=10ms T j=25°C I FSM700A Sto?strom Grenzwert
I2t-value t
p
=10ms T j=25°C I2t2450A2s Grenzlastintegral
Power dissipation per Diode T j=150°C T h=80°C P tot62W Verlustleistung pro Diode T c=80°C93
Transistor Inverter
Transistor Wechselrichter
Collector-emitter break down voltage V CE1200V Kollektor-Emitter-Sperrspannung
DC collector current T j=150°C T h=80°C,I C45A Kollektor-Dauergleichstrom T c=80°C59
Repetitive peak collector current t p=1ms T h=80°C I cpuls90A Periodischer Kollektorspitzenstrom
Power dissipation per IGBT T j=150°C T h=80°C P tot82W Verlustleistung pro IGBT T c=80°C125
Gate-emitter peak voltage V GE±20V Gate-Emitter-Spitzenspannung
SC withstand time Tj 125°C V GE=15V t SC10us Kurzschlu?verhalten V CC=900V
Diode Inverter
Diode Wechselrichter
DC forward current T j=150°C T h=80°C,I F40A Dauergleichstrom T c=80°C54
Repetitive peak forward current t p=1ms T h=80°C I FRM79A Periodischer Spitzenstrom
Power dissipation per Diode T j=150°C T h=80°C P tot57W Verlustleistung pro Diode T c=80°C86
Parameter Condition Symbol Values Unit
max.
Transistor BRC
Transistor BRC
Collector-emitter break down voltage V CE1200V Kollektor-Emitter-Sperrspannung
DC collector current T j=150°C T h=80°C I C56A Kollektor-Dauergleichstrom T j=150°C T c=80°C64
Repetitive peak collector current t p=1ms T h=80°C I cpuls111A Periodischer Kollektorspitzenstrom
Power dissipation per IGBT T j=150°C T h=80°C P tot109W Verlustleistung pro IGBT T c=80°C165
Gate-emitter peak voltage V GE±20V Gate-Emitter-Spitzenspannung
SC withstand time Tj 125°C VGE=15V t SC10us Kurzschlu?verhalten VCE=900 V
Diode BRC
Diode BRC
DC forward current T j=150°C T h=80°C I F44A Dauergleichstrom T j=150°C T c=80°C55
Repetitive peak forward current t p=1ms T h=80°C I FRM87A Periodischer Spitzenstrom
Power dissipation per Diode T j=150°C T h=80°C P tot65W Verlustleistung pro Diode T c=80°C99
Thermal properties
Thermische Eigenschaften
150°C max. Chip temperature T
jmax
max. Chiptemperatur
Storage temperature T
-40…+125°C
stg
Lagertemperatur
-40…+125°C Operation temperature T
op
Betriebstemperatur
Insulation properties
Modulisolation
4000Vdc Insulation voltage t=1min V
is
Isolationsspannung
Creepage distance min 12,7mm Kriechstrecke
Clearance min 12,7mm Luftstrecke
T(C°)Other conditions V GE(V)V R(V)
V CE(V)
I C(A)
IF(A)
(Rgon-Rgoff)V GS(V)V DS(V)I d(A)Min Typ Max
Input Rectifier Bridge
Gleichrichter
Forward voltage V F Tj=25°C350,81,021,35V Durchla?pannung Tj=125°C0,94
Threshold voltage (for power loss calc. only)V to Tj=25°C0,88V Schleusenspannung Tj=125°C350,75
Slope resistance (for power loss calc. only)r t Tj=25°C0,004Ohm Ersatzwiderstand Tj=125°C350,006
Reverse current I r Tj=25°C150000,1mA Sperrstrom Tj=140±10°C150002
Thermal resistance chip to heatsink per chip
W?rmewiderstand Chip-Kühlk?rper pro Chip R
thJH Thermal grease
thickness 50um 1,14K/W
Thermal resistance chip to case per chip
W?rmewiderstand Chip-Gehause pro Chip R
thJC Warmeleitpaste
Dicke 50um
? = 0,61 W/mK0,75K/W
Transistor Inverter
Transistor Wechselrichter
Gate emitter threshold voltage V GE(th)Tj=25°C VCE=VGE0,00255,86,5V Gate-Schwellenspannung Tj=125°C
Collector-emitter saturation voltage V CE(sat)Tj=25°C15501,351,662,15V Kollektor-Emitter S?ttigungsspannung Tj=125°C15501,87
Collector-emitter cut-off current incl. Diode I CES Tj=25°C0122400,005mA Kollektor-Emitter Reststrom Tj=125°C
Gate-emitter leakage current I GES Tj=25°C2500300nA Gate-Emitter Reststrom Tj=125°C
Integrated Gate resistor R gint4Ohm Integrirter Gate Widerstand
Turn-on delay time t d(on)Tj=25°C Rgoff=18 Ohm ns Einschaltverz?gerungszeit Tj=125°C Rgon= 18 Ohm±156005066
Rise time t r Tj=25°C Rgoff=18 Ohm ns Anstiegszeit Tj=125°C Rgon= 18 Ohm±156005023
Turn-off delay time t d(off)Tj=25°C Rgoff=18 Ohm ns Abschaltverz?gerungszeit Tj=125°C Rgon= 18 Ohm±1560050492
Fall time t f Tj=25°C Rgoff=18 Ohm ns Fallzeit Tj=125°C Rgon= 18 Ohm±1560050205
Turn-on energy loss per pulse E on Tj=25°C Rgoff=18 Ohm mWs Einschaltverlustenergie pro Puls Tj=125°C Rgon= 18 Ohm±15600505,48
Turn-off energy loss per pulse E off Tj=25°C Rgoff=18 Ohm mWs Abschaltverlustenergie pro Puls Tj=125°C Rgon= 18 Ohm±15600505,47
Input capacitance C ies Tj=25°C f=1MHz0253,7nF Eingangskapazit?t Tj=125°C
Output capacitance C oss Tj=25°C f=1MHz0250,8nF Ausgangskapazit?t Tj=125°C
Reverse transfer capacitance C rss Tj=25°C f=1MHz0250,7nF Rückwirkungskapazit?t Tj=125°C
Gate charge Q Gate Tj=25°C VCE=600V±15360nC Gate Ladung Tj=125°C ICpulse=50A
Thermal resistance chip to heatsink per chip
W?rmewiderstand Chip-Kühlk?rper pro Chip R
thJH Thermal grease
thickness 50um 0,85K/W
Thermal resistance chip to case per chip
W?rmewiderstand Chip-Gehause pro Chip R
thJC Warmeleitpaste
Dicke 50um
? = 0,61 W/mK0,56K/W
Diode Inverter
Diode Wechselrichter
Diode forward voltage V F Tj=25°C501,31,571,9V Durchla?spannung Tj=125°C501,56
Peak reverse recovery current I RM Tj=25°C Rgon= 18 Ohm60050$ Rückstromspitze Tj=125°C diF/dt = 2554 A/us06005095
Reverse recovery time t rr Tj=25°C Rgon= 18 Ohm60050ns Sperreverz?gerungszeit Tj=125°C diF/dt = 2554 A/us060050455
Reverse recovered charge Q rr Tj=25°C Rgon= 18 Ohm60050uC Sperrverz?gerungsladung Tj=125°C diF/dt = 2554 A/us06005012,5
Reverse recovered energy Erec Tj=25°C Rgon= 18 Ohm60050mWs Sperrverz?gerungsenergie Tj=125°C diF/dt = 2554 A/us0600505,17
Thermal resistance chip to heatsink per chip
W?rmewiderstand Chip-Kühlk?rper pro Chip R
thJH Thermal grease
thickness 50um 1,23K/W
Thermal resistance chip to case per chip
W?rmewiderstand Chip-Gehause pro Chip R
thJC Warmeleitpaste
Dicke 50um
? = 0,61 W/mK0,81K/W
T(C°)Other conditions V GE(V)V R(V)
V CE(V)
I C(A)
IF(A)
(Rgon-Rgoff)V GS(V)V DS(V)I d(A)Min Typ Max
Transistor BRC
Transistor BRC
Gate emitter threshold voltage V GE(th)Tj=25°C VCE=VGE0,00255,86,5V Gate-Schwellenspannung Tj=125°C
Collector-emitter saturation voltage V CE(sat)Tj=25°C15501,351,62,15V Kollektor-Emitter S?ttigungsspannung Tj=125°C15501,79
Collector-emitter cut-off I CES Tj=25°C0122400,05mA Kollektor-Emitter Reststrom Tj=125°C
Gate-emitter leakage current I GES Tj=25°C2500300nA Gate-Emitter Reststrom Tj=125°C
Integrated Gate resistor R gint4Ohm Integrirter Gate Widerstand
Turn-on delay time t d(on)Tj=25°C Rgon= 18 Ohm ns Einschaltverz?gerungszeit Tj=125°C Rgoff= 18 Ohm±156005070,5
Rise time t r Tj=25°C Rgon= 18 Ohm ns Anstiegszeit Tj=125°C Rgoff= 18 Ohm±156005024
Turn-off delay time t d(off)Tj=25°C Rgon= 18 Ohm ns Abschaltverz?gerungszeit Tj=125°C Rgoff= 18 Ohm±1560050486
Fall time t f Tj=25°C Rgon= 18 Ohm ns Fallzeit Tj=125°C Rgoff= 18 Ohm±1560050194
Turn-on energy loss per pulse E
on
Tj=25°C Rgon= 18 Ohm mWs Einschaltverlustenergie pro Puls Tj=125°C Rgoff= 18 Ohm±15600505,61
Turn-off energy loss per pulse E
off
Tj=25°C Rgon= 18 Ohm mWs Abschaltverlustenergie pro Puls Tj=125°C Rgoff= 18 Ohm±15600505,28
Input capacitance C
iss
Tj=25°C f=1MHz0253,7nF Eingangskapazit?t Tj=125°C
Output capacitance C oss Tj=25°C f=1MHz0250,8nF Ausgangskapazit?t Tj=125°C
Reverse transfer capacitance C ies Tj=25°C f=1MHz0250,7nF Rückwirkungskapazit?t Tj=125°C
Gate charge Q gate Tj=25°C VCE=600V±15360nC Gate Ladung Tj=125°C Icpulse=50A
Thermal resistance chip to heatsink per chip
W?rmewiderstand Chip-Kühlk?rper pro Chip R
thJH Thermal grease
thickness 50um 0,64K/W
Thermal resistance chip to case per chip
W?rmewiderstand Chip-Gehause pro Chip R
thJC Warmeleitpaste
Dicke 50um
? = 0,61 W/mK0,43K/W
Diode BRC
Diode BRC
Diode forward voltage V
F
Tj=25°C501,31,521,9V Durchla?spannung Tj=125°C501,55
Reverse current I r Tj=25°C1224050uA Sperrstrom Tj=125°C
Reverse recovery time t
rr
Tj=25°C Rgon= 18 Ohm ns Sperreverz?gerungszeit Tj=125°C diF/dt = 2036 A/us060050467,4
Reverse recovered charge Q
rr
Tj=25°C Rgon= 18 Ohm uC Sperrverz?gerungsladung Tj=125°C diF/dt = 2036 A/us06005011,22
Reverse recovery energy E rec Tj=25°C Rgon= 18 Ohm mWs Sperrverz?gerungsenergie Tj=125°C diF/dt = 2036 A/us0600504,56
Thermal resistance chip to heatsink per chip
W?rmewiderstand Chip-Kühlk?rper pro Chip R
thJH Thermal grease
thickness 50um 1,08K/W
Thermal resistance chip to case per chip
W?rmewiderstand Chip-Gehause pro Chip R
thJC Warmeleitpaste
Dicke 50um
? = 0,61 W/mK0,71K/W
PTC-Thermistor
PTC-Widerstand
Nominal resistance R25Tj=25°C tolerance = 3%0,9711,03kOhm Nominaler Widerstand R100Tj=100°C tolerance = 2%1,6371,671,703kOhm Typical temperature coefficient?Tj=25°C0,76%/K Tipischer Temperaturkoeffizient Tj=125°C
Recommended measuring current Tj=25°C13
Empfohlener Messstrom Tj=125°C
Measured values Tj=25°C I m = 1mA0,931,03 Gemessene Werte I m= 3mA2,843,4mA V
I m V PTC
Figure 1.Typical output characteristics
Figure 2.Typical output characteristics
Output inverter IGBT Output inverter IGBT
parameter: tp = 250 us Tj = 25 °C
parameter: tp = 250 us Tj = 125 °C
V GE parameter:from:7V to 17V
V GE parameter:from:7V to 17V
in 1V steps in 1V steps
Figure 3.Typical transfer characteristics
Figure 4.Typical diode forward current as
Output inverter IGBT
a function of forward voltage
Output inverter FRED
I F =f(V F )parameter: tp = 250 us V CE = 10V parameter: tp = 250 us
Figure 5.Typical switching energy losses
Figure 6.Typical switching energy losses
as a function of collector current as a function of gate resistor Output inverter IGBT
Output inverter IGBT
inductive load, Tj = 125 °C
inductive load, Tj = 125 °C
V CE =600V V CE =600V V GE =±15V V GE =±15V Rgon=18?Ic =50A
Rgoff=18?
Figure 7.Typical switching times as a
Figure 8.Typical switching times as a
function of collector current
function of gate resistor Output inverter IGBT
Output inverter IGBT
t = f (Ic)
t = f (R G )
inductive load, Tj = 125 °C
inductive load, Tj = 125 °C
V CE =600V V CE =600V V GE =±15V V GE =±15V Rgon=18?Ic =50A
Rgoff=18?
Figure 9.Typical reverse recovery time as a
Figure 10.Typical reverse recovery current as a
function of IGBT turn on gate resistor function of IGBT turn on gate resistor Output inverter FRED diode
Output inverter FRED diode
t rr = f (Rgon)
I RRM = f (Rgon)
Tj =125°C Tj =125°C V R =600V V R =600V I F =50A I F =50A V GE =±15V V GE =±15V
Figure 11.Typical reverse recovery charge as a
Figure 12.Typical rate of fall of forward
function of IGBT turn on gate resistor and reverse recovery current as a Output inverter FRED diode
function of IGBT turn on gate resistor Q rr = f (Rgon)
Output inverter FRED diode dI0/dt,dIrec/dt = f (Rgon)
Tj =
125°C Tj =125°C V R =600V V R =600V I F =50A I F =50A V GE =±15V V GE =±15V
Figure 13.IGBT transient thermal impedance
Figure 14.FRED transient thermal impedance
as a function of pulse width
as a function of pulse width
Z th JH = f(tp)
Z th JH = f(tp)
Parameter: D = tp / T RthJH=0,85K/W Parameter: D = tp / T RthJH=1,23K/W
IGBT thermal model values FRED thermal model values R (C/W)
Tau (s)R (C/W)
Tau (s)0,062,6E+010,043,0E+010,111,8E+000,111,9E+000,443,2E-010,443,1E-010,188,5E-020,438,7E-020,069,5E-030,151,3E-020,036,6E-040,071,3E-030,051,2E-040,042,0E-040,00
0,0E+00
0,06
1,4E-04
Figure 15.Power dissipation as a
Figure 16.Collector current as a
function of heatsink temperature function of heatsink temperature Output inverter IGBT Output inverter IGBT
P tot = f (Th)
I c = f (Th)
parameter: Tj = 150°C
V GE =15V
Figure 17.Power dissipation as a
Figure 18.Forward current as a
function of heatsink temperature
function of heatsink temperature Output inverter FRED Output inverter FRED
P tot = f (Th)
I F = f (Th)
parameter: Tj = 150°C parameter: Tj = 150°C
Figure 19.Typical output characteristics
Figure 20.Typical output characteristics
Brake IGBT Brake IGBT
Ic= f(V CE )
Ic= f(V CE )
parameter: tp = 250 us Tj = 25 °C
parameter: tp = 250 us
Tj = 125 °C
V GE parameter:from:
7V to 17V
V GE parameter:from:
7V to 17V
in 1V steps
in 1V steps
Figure 21.Typical transfer characteristics
Figure 22.Typical diode forward current as
Brake IGBT
a function of forward voltage
Ic= f(V GE )
Brake FRED
I F =f(V F )
parameter: tp = 250 us V CE = 10V parameter: tp = 250 us
Figure 23.Typical switching energy losses
Figure 24.Typical switching energy losses
as a function of collector current as a function of gate resistor Brake IGBT
Brake IGBT
E = f (Ic)
E = f (R G )
V CE =600V V CE =600V V GE =±15V V GE =±15V Rgon = 18?Ic =50A
Rgoff = 18?
Figure 25.Typical switching times as a
Figure 26.Typical switching times as a
function of collector current
function of gate resistor Brake IGBT
Brake IGBT
t = f (Ic)
t = f (R G )
inductive load, Tj = 125 °C
inductive load, Tj = 125 °C
V CE =600V V CE =600V V GE =±15V V GE =±15V Rgon =18?Ic =50A
Rgoff =18?
Figure 27.IGBT transient thermal impedance
Figure 28.FRED transient thermal impedance
as a function of pulse width
as a function of pulse width
Z th JH = f(tp)
Z th JH = f(tp)
Parameter: D = tp / T RthJH=0,64K/W Parameter: D = tp / T RthJH=1,08K/W
Figure 29.Power dissipation as a
Figure 30.Collector current as a
function of heatsink temperature function of heatsink temperature Brake IGBT
Brake IGBT
P tot = f (Th)
I c = f (Th)
parameter: Tj = 150°C
parameter: Tj = 150°C
V GE =15V
parameter: Tj = 150°C parameter: Tj = 150°C
Input rectifier bridge
Figure 33.Typical diode forward current as
Figure 34.Diode transient thermal impedance
a function of forward voltage
as a function of pulse width
Rectifier diode
I F =f(V F )
Z th JH = f(tp)
parameter: tp = 250 us Parameter: D = tp / T RthJH=1,14K/W
Figure 35.Power dissipation as a
Figure 36.Forward current as a
function of heatsink temperature function of heatsink temperature Rectifier diode
Rectifier diode
P tot = f (Th)
I F = f (Th)
parameter: Tj = 150°C parameter: Tj = 150°C
Thermistor
Figure 37.Typical PTC characteristic
as afunction of temperature
R T = f (T)