V23990-P518-C44-14

V23990-P518-C44-PM

Final data sheet

flow PIM 1+E 1200V/ 25A V23990-P518-C44-01-14 Maximum Ratings / H?chstzul?ssige Werte

Parameter Condition Symbol Datasheet values Unit

max.

Transistor Inverter

Transistor Wechselrichter

Collector-emitter break down voltage V CE1200V Kollektor-Emitter-Sperrspannung

DC collector current T j=175°C T h=80°C,I C27,3A Kollektor-Dauergleichstrom T c=80°C35,9

Repetitive peak collector current tp limited by Tj max I cpuls A Periodischer Kollektorspitzenstrom75

Power dissipation per IGBT T j=175°C T h=80°C P tot66W Verlustleistung pro IGBT T c=80°C100

Gate-emitter peak voltage V GE±20V Gate-Emitter-Spitzenspannung

SC withstand time*Tj 150°C V GE=15V t SC tbd us Kurzschlu?verhalten*V CC=360V

max. Chip temperature T jmax -55…+150°C max. Chiptemperatur

Diode Inverter

Diode Wechselrichter

DC forward current T j=175°C T h=80°C,I F26A Dauergleichstrom T c=80°C34,9

Repetitive peak forward current tp limited by Tj max I FRM A Periodischer Spitzenstrom50

Power dissipation per Diode T j=175°C T h=80°C P tot47W Verlustleistung pro Diode T c=80°C71

max. Chip temperature T jmax -55…+150°C max. Chiptemperatur

Thermal properties

Thermische Eigenschaften

Storage temperature T stg -40…+125°C Lagertemperatur

Operation temperature T op -40…+125°C Betriebstemperatur

Insulation properties

Modulisolation

Insulation voltage t=1min V is4000Vdc Isolationsspannung

Creepage distance min 12,7mm Kriechstrecke

Clearance min 12,7mm Luftstrecke

Additional notes and remarks:* Allowed number of short circuits must be less than 1000 times, and time duration

between short circuits should be more than 1 second!

V23990-P518-C44-PM

Final data sheet

flow PIM 1+E 1200V/ 25A

V23990-P518-C44-01-14

Characteristic values/ Charateristische Werte

Description

Symbol

Conditions Datasheet values

Unit

T(C°)

Other conditions VGE(V)VR(V)

VCE(V)IC(A)IF(A)(Rgon-Rgoff)

VGS(V)VDS(V)

Id(A)

Min Typ Max

Input Rectifier Bridge Gleichrichter

Forward voltage V F Tj=25°C 300,8

1,161,35

V Durchla?pannung

Tj=125°C 1,11Threshold voltage (for power loss calc. only)V to Tj=25°C 300,91V Schleusenspannung

Tj=125°C 0,78Slope resistance (for power loss calc. only)r t Tj=25°C 30

0,008Ohm

Ersatzwiderstand Tj=125°C 0,011

Reverse current I r

Tj=25°C 1500

0,02mA

Sperrstrom

Tj=150°C

Thermal resistance chip to heatsink per chip W?rmewiderstand Chip-Kühlk?rper pro Chip R thJH Thermal grease thickness 50um

1,68

K/W

Thermal resistance chip to case per chip W?rmewiderstand Chip-Gehause pro Chip R thJC

Warmeleitpaste

Dicke 50um ? = 0,61 W/mK

Transistor Inverter

Transistor Wechselrichter Gate emitter threshold voltage V GE(th)Tj=25°C VCE=VGE

0,00145,57V Gate-Schwellenspannung

Tj=150°C Collector-emitter saturation voltage V CE(sat)Tj=25°C 1525

2,072,7V Kollektor-Emitter S?ttigungsspannung Tj=125°C 2,25

Collector-emitter cut-off I CES Tj=25°C 012000,25mA Kollektor-Emitter Reststrom Tj=150°C Gate-emitter leakage current I GES Tj=25°C 20

200

nA Gate-Emitter Reststrom Tj=150°C

Integrated Gate resistor R gint none

Ohm Integrirter Gate Widerstand Turn-on delay time

t d(on)Tj=25°C Rgoff=16 ?ns

Einschaltverz?gerungszeit Tj=125°C Rgon=16 ?±1560025129

Rise time t r Tj=25°C Rgoff=16 ?ns

Anstiegszeit

Tj=125°C Rgon=16 ?±156002513

Turn-off delay time

t d(off)Tj=25°C Rgoff=16 ?ns

Abschaltverz?gerungszeit Tj=125°C Rgon=16 ?±1560025232

Fall time t f Tj=25°C Rgoff=16 ?ns

Fallzeit

Tj=125°C Rgon=16 ?±1560025126

Turn-on energy loss per pulse E on Tj=25°C Rgoff=16 ?mWs

Einschaltverlustenergie pro Puls Tj=125°C Rgon=16 ?±15600251,3

Turn-off energy loss per pulse E off Tj=25°C Rgoff=16 ?mWs

Abschaltverlustenergie pro Puls Tj=125°C Rgon=16 ?±1560025

1,64Input capacitance C ies Tj=25°C f=1MHz 0252,02nF Eingangskapazit?t Output capacitance C oss Tj=25°C f=1MHz 0250,19nF Ausgangskapazit?t

Reverse transfer capacitance C rss Tj=25°C f=1MHz

0,06

nF Rückwirkungskapazit?t Gate charge Q Gate

Tj=25°C

Gate Ladung

Thermal resistance chip to heatsink per chip W?rmewiderstand Chip-Kühlk?rper pro Chip R thJH Thermal grease thickness 50um

1,06K/W Thermal resistance chip to case per chip W?rmewiderstand Chip-Gehause pro Chip

R thJC Warmeleitpaste

Dicke 50um ? = 0,61 W/mK K/W

Coupled thermal resistance inverter diode-transistor

Gekoppelte W?rmewiderstand Wechselrichter Diode-Transistor R thJH tbd K/W Coupled thermal resistance inverter transistor-transistor

Gekoppelte W?rmewiderstand Wechselrichter Transistor-Transistor R thJH

tbd

K/W

Diode Inverter Diode Wechselrichter Diode forward voltage V F Tj=25°C 25

2,192,75V Durchla?spannung

Tj=125°C 1,81Peak reverse recovery current I RM Tj=25°C Rgoff=16 ?A

Rückstromspitze

Tj=125°C Rgon=16 ?±156002589,1

Reverse recovery time t rr Tj=25°C Rgoff=16 ?ns

Sperreverz?gerungszeit Tj=125°C Rgon=16 ?±156002599

Reverse recovered charge Q rr Tj=25°C Rgoff=16 ?uC

Sperrverz?gerungsladung Tj=125°C Rgon=16 ?±15600254,38

Reverse recovered energy Erec

Tj=25°C Rgoff=16 ?mWs

Sperrverz?gerungsenergie

Tj=125°C

Rgon=16 ?±15

600

1,93Thermal resistance chip to heatsink per chip W?rmewiderstand Chip-Kühlk?rper pro Chip R thJH Thermal grease thickness 50um

1,5

K/W Thermal resistance chip to case per chip W?rmewiderstand Chip-Gehause pro Chip

R thJC Warmeleitpaste

Dicke 50um ? = 0,61 W/mK

K/W Coupled thermal resistance inverter transistor-diode

Gekoppelte W?rmewiderstand Wechselrichter Transistor-Diode R thJH K/W Coupled thermal resistance inverter diode-diode

DWN 17-16/18

Output inverter

Figure 1.

Typical output characteristics Figure 2.

Typical output characteristics Output inverter IGBT

Output inverter IGBT

Ic= f(V CE )

V GE parameter:from:7V to 17V

in 1V steps in 1V steps

Figure 3.

Typical transfer characteristics

Figure 4.

Typical diode forward current as Output inverter IGBT

a function of forward voltage

Output inverter FRED

I F =f(V F )parameter: tp = 250 us V CE = 10V parameter: tp = 250 us

Output inverter

Figure 5.

Typical switching energy losses Figure 6.

Typical switching energy losses as a function of collector current as a function of gate resistor Output inverter IGBT

Output inverter IGBT

V CE =600V V CE =600V V GE =±15V V GE =±15V Rgon=16?Ic =25A

Rgoff=16?

Figure 7.

Typical switching times as a

Figure 8.

Typical switching times as a function of collector current function of gate resistor Output inverter IGBT

Output inverter IGBT

t = f (Ic)

t = f (R G )

inductive load, Tj = 125 °C

V CE =600V V CE =600V V GE =±15V V GE =±15V Rgon=16?Ic =25A

Rgoff=16?

Output inverter

Figure 9.

Typical reverse recovery time as a Figure 10.Typical reverse recovery current as a

function of IGBT turn on gate resistor function of IGBT turn on gate resistor Output inverter FRED diode

Output inverter FRED diode

t rr = f (Rgon)

I RRM = f (Rgon)

V R =600V V R =600V I F =25A I F =25A V GE =±15V V GE =±15V

Figure 11.Typical reverse recovery charge as a

Figure 12.Typical rate of fall of forward

function of IGBT turn on gate resistor and reverse recovery current as a

Output inverter FRED diode

function of IGBT turn on gate resistor Q rr = f (Rgon)

Output inverter FRED diode dI0/dt,dIrec/dt = f (Rgon)

Tj =125°C Tj =125°C V R =600V V R =600V I F =25A I F =25A V GE =±15V V GE =±15

Output inverter

Figure 13.IGBT transient thermal impedance

Figure 14.FRED transient thermal impedance

as a function of pulse width

Z th JH = f(tp)

Parameter: D = tp / T RthJH=1,06K/W Parameter: D = tp / T RthJH=1,50K/W

IGBT thermal model values FRED thermal model values R (C/W)

Tau (s)R (C/W)

Tau (s)0,111,9E+000,055,6E+000,403,1E-010,237,9E-010,381,0E-010,751,8E-010,111,3E-020,303,2E-020,031,0E-030,115,6E-030,03

1,4E-04

0,07

5,1E-04

Output inverter

Figure 15.Power dissipation as a

Figure 16.Collector current as a

function of heatsink temperature function of heatsink temperature Output inverter IGBT

Output inverter IGBT

I c = f (Th)

V GE =15V

Figure 17.Power dissipation as a

Figure 18.Forward current as a

function of heatsink temperature function of heatsink temperature Output inverter FRED

Output inverter FRED

P tot = f (Th)

I F = f (Th)

Input rectifier bridge

Figure 1.

Typical diode forward current as Figure 2.

Diode transient thermal impedance a function of forward voltage

as a function of pulse width

Rectifier diode

I F =f(V F )

Z th JH = f(tp)

Parameter: D = tp / T RthJH=1,68K/W

Figure 3.

Power dissipation as a

Figure 4.

Forward current as a

function of heatsink temperature function of heatsink temperature Rectifier diode

Rectifier diode

P tot = f (Th)

I F = f (Th)

parameter: Tj= 150 oC parameter: Tj= 150 oC

Thermistor

Figure 1.Typical NTC characteristic

as afunction of temperature

Switching definitions

General conditions:Tj=125°C Rgon=16?Rgoff=16?Figure 1.Turn-off Switching Waveforms & Figure 2.Turn-on Switching Waveforms & definition of tdoff,t Eoff definition of t don,t Eon

(t Eoff = integrating time for E off)(t Eon=integrating time for E on)

Uge(100%)=15V Uge(100%)=15V

Uc(100%)=600V Uc(100%)=600V

Ic(100%)=24A Ic(100%)=24A

tdoff=0,23us tdon=0,13us

t Eoff=0,37us t Eon=0,37us

Figure 3.Turn-off Switching Waveforms & Figure 4.Turn-on Switching Waveforms & definition of t f definition of t r

Output inverter IGBT Output inverter IGBT

Uc(100%)=600V

Ic(100%)=24A Ic(100%)=24A

t f=0,126us t r=0,013us

Switching definitions

Figure 5.

Turn-off Switching Waveforms & Figure 6.

Turn-on Switching Waveforms & definition of t Eoff

definition of t Eon

Output inverter IGBT

Eoff(100%)=1,64mJ

Eon(100%)=

1,30mJ t Eoff =0,37us t Eon =0,37us

Figure 7.Gate voltage vs Gate charge

Figure 8.

Turn-off Switching Waveforms &

Output inverter IGBT

definition of t rr

Ugeon=15V Ud(100%)=600V Uc(100%)=600V Id(100%)=24A Ic(100%)=24

A I RRM (100%)=

89A Qg=318,6nC

trr=0,10us

Switching definitions

Figure 9.

Turn-on Switching Waveforms & Figure 10.Turn-on Switching Waveforms &

definition of t Qrr

definition of t Erec

(tQrr= integrating time for Qrr)(t Erec = integrating time for E rec )Output inverter FRED

Output inverter FRED

Id(100%)=24A Prec(100%)=14,7kW Qrr(100%)=4,379uC

Erec(100%)=1,93mJ tQint=0,40us tErec=0,40us