STE110NA20中文资料

STE110NA20

N -CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

PRELIMINARY DATA

s TYPICAL R DS(on)=0.015?

s HIGH CURRENT POWER MODULE s AVALANCHE RUGGED TECHNOLOGY

VERY LARGE SOA -LARGE PEAK POWER CAPABILITY

s EASY TO MOUNT

SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS

s EXTREMELY LOW Rth (Junction to case)s

VERY LOW INTERNAL PARASITIC INDUCTANCE

ISOLATED PACKAGE UL RECOGNIZED

APPLICATIONS s SMPS &UPS s MOTOR CONTROL s WELDING EQUIPMENT s OUTPUT STAGE FOR PWM,ULTRASONIC CIRCUITS

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter

Value Unit V DS Drain-source Voltage (V GS =0)200V V DGR Drain-gate Voltage (R GS =20k ?)200V V GS Gate-source Voltage

±30V I D Drain Current (continuous)at T c =25o C 110A I D Drain Current (continuous)at T c =100o

C 73A I DM (?)Drain Current (pulsed)

440A P to t Total Dissipation at T c =25o

C 450W Derating Factor 3.6W/o

T st g Storage Temperature

-55to 150

o C T j Max.Operating Junction Temperature 150o C

V ISO

Insulation Withhstand Voltage (AC-RMS)

2500

(?)Pulse width limited by safe operating area

TYPE V DSS R DS(on)I D STE110NA20

200V

<0.019?

110A

March 1996ISOTOP

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THERMAL DATA

R t hj-ca se R thc-h Thermal Resistance Junction-case Max

Thermal Resistance Case-heatsink With Conductive

Grease Applied Max

0.27

0.05

o C/W

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I AR Avalanche Current,Repetitive or Not-Repetitive

(pulse width limited by T j max,δ <1%)

55A

E AS Single Pulse Avalanche Energy

(starting T j=25o C,I D=I AR,V DD=50V)

500mJ

E AR Repetitive Avalanche Energy

(pulse width limited by T j max,δ <1%)

175mJ

I AR Avalanche Current,Repetitive or Not-Repetitive

(T c=100o C,pulse width limited by T j max,δ <1%)

32.5A

ELECTRICAL CHARACTERISTICS(T case=25o C unless otherwise specified)

OFF

Symbol Parameter Test Conditions Min.Typ.Max.Unit V(BR)DSS Drain-source

Breakdown Voltage

I D=1mA V GS=0200V

I DSS Zero Gate Voltage

Drain Current(V GS=0)V DS=Max Rating

V DS=Max Rating x0.8T c=125o C

400

200

μA

I GSS Gate-body Leakage

Current(V DS=0)

V GS=±30V±400nA ON(?)

Symbol Parameter Test Conditions Min.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS=V GS I D=1mA 2.253 3.75V

R DS(on)Static Drain-source On

Resistance V GS=10V I D=55A

V GS=10V I D=55A T c=100o C

0.0150.019?

I D(o n)On State Drain Current V DS>I D(on)x R DS(on)max

V GS=10V

110A DYNAMIC

Symbol Parameter Test Conditions Min.Typ.Max.Unit

g fs(?)Forward

Transconductance

V DS=15V I D=55A38S

C iss C oss C rss Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

V DS=25V f=1MHz V GS=012.9

2870

980

STE110NA20 2/8

ELECTRICAL CHARACTERISTICS(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min.Typ.Max.Unit

t d(on) t r Turn-on Time

Rise Time

V DD=100V I D=55A

R G=4.7 ?V GS=10V

(see test circuit,figure3)

100

125

(di/dt)on Turn-on Current Slope V DD=160V I D=110A

R G=47 ?V GS=10V

(see test circuit,figure5)

290A/μs

Q g Q gs Q gd Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V DD=160V I D=110A V GS=10V470

226

600nC

SWITCHING OFF

Symbol Parameter Test Conditions Min.Typ.Max.Unit

t r(Vof f) t f

t c Off-voltage Rise Time

Fall Time

Cross-over Time

V DD=160V I D=110A

R G=4.7 ?V GS=10V

(see test circuit,figure5)

115

160

150

100

210

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min.Typ.Max.Unit

I SD I SDM(?)Source-drain Current

Source-drain Current

(pulsed)

110

440

V SD(?)Forward On Voltage I SD=110A V GS=0 1.6V

t rr Q rr I RRM Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

I SD=110A di/dt=100A/μs

V R=50V T j=150o C

(see test circuit,figure5)

625

μC

(?)Pulsed:Pulse duration=300μs,duty cycle1.5%

(?)Pulse width limited by safe operating area

Safe Operating Area Thermal Impedance

STE110NA20

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Derating Curve

Transfer Characteristics

Static Drain-source On Resistance Output Characteristics Transconductance

Gate Charge vs Gate-source Voltage

STE110NA20 4/8

Capacitance Variations

Normalized On Resistance vs Temperature Turn-off Drain-source Voltage Slope Normalized Gate Threshold Voltage vs Temperature

Turn-on Current Slope

Cross-over Time

STE110NA20

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Switching Safe Operating Area

Source-drain Diode Forward Characteristics Fig.1:Unclamped Inductive Load Test Circuit Accidental Overload Area

Fig.2:Unclamped Inductive Waveform

STE110NA20 6/8

Fig.3:Switching Times Test Circuits For Resistive Load

Fig.5:Test Circuit For Inductive Load Switching And DIode Recovery Times Fig.4:Gate Charge test Circuit

STE110NA20

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STE110NA20

Information furnished is believed to be accurate and reliable.However,SGS-THOMSON Microelectronics assumes no responsabilit y for the consequences of use of such information nor for any infringemen t of patents or other rights of third parties which may results from its use.No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectr onics.Specifications mention ed in this publication are subject to change without notice.This publication supersede s and replaces all information previously supplied.

SGS-THOMSON Microelectr onics products are not auth orized for use as critical compon ents in life support devices or systems without expre ss written approval of SGS-THOMSON Microelectonics.

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