IXGQ28N120B;IXGQ28N120BD1;中文规格书,Datasheet资料

IXGQ28N120B;IXGQ28N120BD1;中文规格书,Datasheet资料
IXGQ28N120B;IXGQ28N120BD1;中文规格书,Datasheet资料

? 2003 IXYS All rights reserved

G = Gate

C = Collector E = Emitter TAB = Collector

Symbol Test Conditions Maximum Ratings

V CES T J = 25°C to 150°C

1200V V CGR T J = 25°C to 150°C; R GE = 1 M ?1200V V GES Continuous ±20V V GEM Transient ±30V I C25T C = 25°C 50A I C110T C = 110°C 28A I CM

T C = 25°C, 1 ms

150A SSOA V GE = 15 V, T J = 125°C, R G = 10 ? I CM = 60A (RBSOA)Clamped inductive load @0.8 V CES

P C T C = 25°C

250

W T J -55 ... +150

°C T JM 150

°C T stg -55 ... +150

°C

M d

Mounting torque 1.13/10

Nm/lb.in.

Maximum lead temperature for soldering 300

°C

1.6 mm (0.062 in.) from case for 10 s Weight

6 g

Symbol

Test Conditions

Characteristic Values

(T J = 25°C, unless otherwise specified)

min.typ.max.

V GE(th)I C = 250 μA, V CE = V GE

2.5

5.0V I CES V CE = V CES T J = 25°C 28N120B 25μA V GE = 0 V

28N120BD1

50μA I GES V CE = 0 V, V GE = ±20 V ±100

nA V CE(sat)

I C = 28A, V GE = 15 V 2.9 3.5

V

Note 2

T=125°C

2.8

Features

z International standard package

z

IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers z

MOS Gate turn-on -drive simplicity

z

Fast Recovery Expitaxial Diode (FRED)-soft recovery with low I RM

Advantages

z

Saves space (two devices in one package)

z

Easy to mount with 1 screw (isolated mounting screw hole)z

Reduces assembly time and cost

DS99135(12/03)

High Voltage IGBT with Diode

IXGQ 28N120B IXGQ 28N120BD1

V CES =1200V I C25

=50A V CE(sat)

= 3.5V t fi(typ)

=160ns

D1

TO-3P (IXGQ)

G

C

E

(TAB)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more 4,850,0724,931,8445,034,796 5,063,3075,237,4815,381,025 6,404,065B16,162,6656,534,3436,583,505 of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

6,259,123B16,306,728B16,683,344

Notes: 1.Switching times may increase for V CE (Clamp) > 0.8 ? V CES ,higher T J or increased R G .

2.Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %

? 2003 IXYS All rights reserved

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more 4,850,0724,931,8445,034,796 5,063,3075,237,4815,381,025 6,404,065B16,162,6656,534,3436,583,505 of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B16,259,123B16,306,728B16,683,344

? 2003 IXYS All rights reserved

Fig. 23Transient thermal resistance junction to case

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more4,850,0724,931,8445,034,7965,063,3075,237,4815,381,0256,404,065B16,162,6656,534,3436,583,505 of the following U.S. patents:4,835,5924,881,1065,017,5085,049,9615,187,1175,486,7156,306,728B16,259,123B16,306,728B16,683,344

分销商库存信息:

IXYS

IXGQ28N120B IXGQ28N120BD1

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