IRF7342QPBF中文资料

?07/23/07

Description

IRF7342QPbF

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Parameter

Max.

Units

V DS

Drain- Source Voltage

-55V I D @ T C = 25°C Continuous Drain Current, V GS @ 10V -3.4I D @ T C = 70°C Continuous Drain Current, V GS @ 10V -2.7A I DM

Pulsed Drain Current -27P D @T C = 25°C Power Dissipation 2.0P D @T C = 70°C Power Dissipation 1.3Linear Derating Factor 0.016W/°C V GS Gate-to-Source Voltage

± 20V V GSM Gate-to-Source Voltage Single Pulse tp<10μs 30V E AS Single Pulse Avalanche Energy 114dv/dt Peak Diode Recovery dv/dt

5.0

V/ns T J, T STG

Junction and Storage Temperature Range

-55 to + 150

°C

Parameter

Typ.

Max.

Units

R θJA

Maximum Junction-to-Ambient

–––

62.5

°C/W

Thermal Resistance

Absolute Maximum Ratings

W SO-8

O Advanced Process Technology O Ultra Low On-Resistance O Dual P Channel MOSFET O Surface Mount

O Available in Tape & Reel

O 150°C Operating Temperature O Automotive [Q101] Qualified O

Lead-Free

Specifically designed for Automotive applications, these HEXFET ? Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

PD - 96109

IRF7342QPbF

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Parameter

Min.Typ.Max.Units Conditions V (BR)DSS

Drain-to-Source Breakdown Voltage -55––––––V V GS = 0V, I D = -250μA

?V (BR)DSS /?T J

Breakdown Voltage Temp. Coefficient –––-0.054–––V/°C Reference to 25°C, I D = -1mA –––0.0950.105V GS = -10V, I D = -3.4A

–––0.1500.170V GS = -4.5V, I D = -2.7A V GS(th)Gate Threshold Voltage -1.0––––––V V DS = V GS , I D = -250μA g fs Forward Transconductance 3.3––––––S V DS = -10V, I D

= -3.1A ––––––-2.0V DS = -55V, V GS = 0V

––––––-25V DS = -55V, V GS = 0V, T J = 55°C Gate-to-Source Forward Leakage ––––––-100V GS = -20V

Gate-to-Source Reverse Leakage ––––––100V GS = 20V Q g Total Gate Charge

–––2638I D = -3.1A Q gs Gate-to-Source Charge

––– 3.0 4.5nC V DS = -44V Q gd Gate-to-Drain ("Miller") Charge –––8.413V GS = -10V, See Fig. 10 t d(on)Turn-On Delay Time –––1422V DD = -28V t r

Rise Time

–––1015I D = -1.0A

t d(off)Turn-Off Delay Time –––4364R G = 6.0?t f Fall Time

–––2232R D = 16?, C iss Input Capacitance –––690–––V GS = 0V C oss Output Capacitance

–––210–––pF V DS = -25V C rss

Reverse Transfer Capacitance

–––86–––? = 1.0MHz, See Fig. 9

Electrical Characteristics @ T J = 25°C (unless otherwise specified)

I GSS μA

R DS(on)Static Drain-to-Source On-Resistance I DSS Drain-to-Source Leakage Current nA

Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ -3.4A, di/dt ≤ -150A/μs, V DD ≤ V (BR)DSS , T J ≤ 150°C

Notes:

Starting T J = 25°C, L = 20mH

R G = 25?, I AS = -3.4A. (See Figure 8)

Pulse width ≤ 300μs; duty cycle ≤ 2%.

When mounted on 1 inch square copper board, t<10 sec

IRF7342QPbF

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Forward Voltage

IRF7342QPbF

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Vs. Temperature

Fig 8. Maximum Avalanche Energy

Vs. Drain Current

Current

Fig 7. Typical On-Resistance Vs. Gate Voltage

R D S (o n ) , D r a i n -t o -S o u r c e O n R e s i s t a n c e ( ? )

0.05

0.15

0.250.35

0.45

-V , Gate-to-Source Voltage (V)

IRF7342QPbF

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Gate-to-Source Voltage

Drain-to-Source Voltage Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

IRF7342QPbF

SO-8 Package Outline

IRF7342QPbF

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330.00(12.992) MAX.

14.40 ( .566 )12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

TERMINAL NUMBER 1

12.3 ( .484 )11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

SO-8 Tape and Reel

Dimensions are shown in millimeters (inches)

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at https://www.360docs.net/doc/d25335322.html, for sales contact information .07/2007

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.

Qualification Standards can be found on IR’s Web site.

Note: For the most current drawing please refer to IR website at https://www.360docs.net/doc/d25335322.html,/package/