BUZ330中文资料

BUZ330中文资料
BUZ330中文资料

SIPMOS? Power Transistor

? N channel

? Enhancement mode

? Avalanche-rated

Type V DS I D R DS(on)Package Ordering Code BUZ 330500 V9.5 A0.6 ?TO-218 AA C67078-S3105-A2

Maximum Ratings

Parameter Symbol Values Unit

Continuous drain current T C = 28 °C I D

9.5

A

Pulsed drain current T C = 25 °C I Dpuls

38

Avalanche current,limited by T jmax I AR 9.5

Avalanche energy,periodic limited by T jmax E AR 13mJ

Avalanche energy, single pulse

I D = 9.5 A, V DD = 50 V, R GS = 25 ?L = 13.4 mH, T j = 25 °C E AS

670

Gate source voltage V GS± 20V

Power dissipation T C = 25 °C P tot

125

W

Operating temperature T j -55 ... + 150°C Storage temperature T stg -55 ... + 150 Thermal resistance, chip case R thJC ≤ 1K/W Thermal resistance, chip to ambient R thJA 75

DIN humidity category, DIN 40 040 E

IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Electrical Characteristics, at T j = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min.typ.max.

Static Characteristics

Drain- source breakdown voltage V GS = 0 V, I D = 0.25 mA, T j = 25 °C V(BR)DSS

500--

V

Gate threshold voltage V GS=V DS, I D = 1 mA V GS(th)

2.1 3 4

Zero gate voltage drain current

V DS = 500 V, V GS = 0 V, T j = 25 °C V DS = 500 V, V GS = 0 V, T j = 125 °C I DSS

-

-

10

0.1

100

1

μA

Gate-source leakage current V GS = 20 V, V DS = 0 V I GSS

- 10 100

nA

Drain-Source on-resistance V GS = 10 V, I D = 6 A R DS(on)

- 0.45 0.6

?

Electrical Characteristics, at T j = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min.typ.max. Dynamic Characteristics

Transconductance

V DS≥ 2 *I D * R DS(on)max, I D = 6 A g fs

5 9.3-

S

Input capacitance

V GS = 0 V, V DS = 25 V, f = 1 MHz C iss

- 1700 2300

pF

Output capacitance

V GS = 0 V, V DS = 25 V, f = 1 MHz C oss

- 220 330

Reverse transfer capacitance

V GS = 0 V, V DS = 25 V, f = 1 MHz C rss

- 95 140

Turn-on delay time

V DD = 30 V, V GS = 10 V, I D = 3 A R GS = 50 ?t d(on)

- 23 45

ns

Rise time

V DD = 30 V, V GS = 10 V, I D = 3 A R GS = 50 ?t r

- 95 145

Turn-off delay time

V DD = 30 V, V GS = 10 V, I D = 3 A R GS = 50 ?t d(off)

- 340 450

Fall time

V DD = 30 V, V GS = 10 V, I D = 3 A R GS = 50 ?t f

- 110 150

Electrical Characteristics, at T j = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min.typ.max. Reverse Diode

Inverse diode continuous forward current T C = 25 °C I S

-- 9.5

A

Inverse diode direct current,pulsed T C = 25 °C I SM

-- 38

Inverse diode forward voltage V GS = 0 V, I F = 19 A V SD

- 1 1.4

V

Reverse recovery time

V R = 100 V, I F=l S, d i F/d t = 100 A/μs t rr

- 400-

ns

Reverse recovery charge

V R = 100 V, I F=l S, d i F/d t = 100 A/μs Q rr

- 6-

μC

Drain current I D = ?(T C )

parameter: V GS ≥ 10 V

20406080100120°C 160

T C

0 1 2 3 4 5 6 7 8 A

10 I

D

Power dissipation P tot = ?(T C )

20

40

60

80

100

120

°C

160

T C

0 10 20 30 40 50 60 70 80 90 100 110

W 130 P tot

Safe operating area I D = ?(V DS )

parameter: D = 0.01, T C = 25°C

10 10 10 10 I D

10

10

10

10

V V DS Transient thermal impedance

Z th JC = ?(t p )

parameter: D = t p / T

10 10 10 10 10 Z thJC

10

10

10

10

10

10

10 10

s t p

Typ. output characteristics I D = ?(V DS )

parameter: t p = 80 μs

4

8

12

16

20

V 28V DS

I D

Typ. drain-source on-resistance R DS (on) = ?(I D )parameter: V GS

246810121416A 19

I D

R DS (on)

Typ. transfer characteristics I D = f (V GS )parameter: t p = 80 μs V DS ≥2 x I D x R DS(on)max

1

2

3

4

5

6

7

8

V

10

V GS

0 1 2 3 4 5 6 7 8 9 10 11

A 13 I D

Typ. forward transconductance g fs = f (I D )

parameter: t p = 80 μs,V DS ≥2 x I D x R DS(on)max

2468

A 12

I D

0 1 2 3 4 5 6 7 8 9 10 11 12 13

S 15 g fs

Gate threshold voltage

V GS (th) = ?(T j)

parameter: V GS = V DS, I D = 1 mA

V

GS(th)

-60-202060100°C160

T

j Drain-source on-resistance

R DS (on) = ?(T j)

parameter: I D = 6 A, V GS = 10 V

-60-202060100°C160

T

j

R

DS (on)

Typ. capacitances

C = f (V DS)

parameter:V GS = 0V, f = 1MHz

0510********V40

V

DS

10

10

10

10

C

Forward characteristics of reverse diode

I F = ?(V SD)

parameter: T j, t p = 80 μs

10

10

10

10

I

F

0.00.40.8 1.2 1.6 2.0 2.4V 3.0

V

SD

Avalanche energy E AS = ?(T j )parameter: I D = 9.5 A, V DD = 50 V R GS = 25 ?, L = 13.4 mH

20

406080100120°C 160T j

0 50 100 150 200 250 300 350 400 450 500 550 600

mJ 700 E

AS

Typ. gate charge V GS = ?(Q Gate )

parameter: I D puls = 14 A

4080120160nC 240

Q Gate

V GS

Drain-source breakdown voltage V (BR)DSS = ?(T j )

-60

-202060100°C 160

T j

450 460

470 480 490 500 510 520 530 540 550 560 570

580

V 600 V (BR)DSS

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