BUZ330中文资料
SIPMOS? Power Transistor
? N channel
? Enhancement mode
? Avalanche-rated
Type V DS I D R DS(on)Package Ordering Code BUZ 330500 V9.5 A0.6 ?TO-218 AA C67078-S3105-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current T C = 28 °C I D
9.5
A
Pulsed drain current T C = 25 °C I Dpuls
38
Avalanche current,limited by T jmax I AR 9.5
Avalanche energy,periodic limited by T jmax E AR 13mJ
Avalanche energy, single pulse
I D = 9.5 A, V DD = 50 V, R GS = 25 ?L = 13.4 mH, T j = 25 °C E AS
670
Gate source voltage V GS± 20V
Power dissipation T C = 25 °C P tot
125
W
Operating temperature T j -55 ... + 150°C Storage temperature T stg -55 ... + 150 Thermal resistance, chip case R thJC ≤ 1K/W Thermal resistance, chip to ambient R thJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
Electrical Characteristics, at T j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min.typ.max.
Static Characteristics
Drain- source breakdown voltage V GS = 0 V, I D = 0.25 mA, T j = 25 °C V(BR)DSS
500--
V
Gate threshold voltage V GS=V DS, I D = 1 mA V GS(th)
2.1 3 4
Zero gate voltage drain current
V DS = 500 V, V GS = 0 V, T j = 25 °C V DS = 500 V, V GS = 0 V, T j = 125 °C I DSS
-
-
10
0.1
100
1
μA
Gate-source leakage current V GS = 20 V, V DS = 0 V I GSS
- 10 100
nA
Drain-Source on-resistance V GS = 10 V, I D = 6 A R DS(on)
- 0.45 0.6
?
Electrical Characteristics, at T j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min.typ.max. Dynamic Characteristics
Transconductance
V DS≥ 2 *I D * R DS(on)max, I D = 6 A g fs
5 9.3-
S
Input capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz C iss
- 1700 2300
pF
Output capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz C oss
- 220 330
Reverse transfer capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz C rss
- 95 140
Turn-on delay time
V DD = 30 V, V GS = 10 V, I D = 3 A R GS = 50 ?t d(on)
- 23 45
ns
Rise time
V DD = 30 V, V GS = 10 V, I D = 3 A R GS = 50 ?t r
- 95 145
Turn-off delay time
V DD = 30 V, V GS = 10 V, I D = 3 A R GS = 50 ?t d(off)
- 340 450
Fall time
V DD = 30 V, V GS = 10 V, I D = 3 A R GS = 50 ?t f
- 110 150
Electrical Characteristics, at T j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min.typ.max. Reverse Diode
Inverse diode continuous forward current T C = 25 °C I S
-- 9.5
A
Inverse diode direct current,pulsed T C = 25 °C I SM
-- 38
Inverse diode forward voltage V GS = 0 V, I F = 19 A V SD
- 1 1.4
V
Reverse recovery time
V R = 100 V, I F=l S, d i F/d t = 100 A/μs t rr
- 400-
ns
Reverse recovery charge
V R = 100 V, I F=l S, d i F/d t = 100 A/μs Q rr
- 6-
μC
Drain current I D = ?(T C )
parameter: V GS ≥ 10 V
20406080100120°C 160
T C
0 1 2 3 4 5 6 7 8 A
10 I
D
Power dissipation P tot = ?(T C )
20
40
60
80
100
120
°C
160
T C
0 10 20 30 40 50 60 70 80 90 100 110
W 130 P tot
Safe operating area I D = ?(V DS )
parameter: D = 0.01, T C = 25°C
10 10 10 10 I D
10
10
10
10
V V DS Transient thermal impedance
Z th JC = ?(t p )
parameter: D = t p / T
10 10 10 10 10 Z thJC
10
10
10
10
10
10
10 10
s t p
Typ. output characteristics I D = ?(V DS )
parameter: t p = 80 μs
4
8
12
16
20
V 28V DS
I D
Typ. drain-source on-resistance R DS (on) = ?(I D )parameter: V GS
246810121416A 19
I D
R DS (on)
Typ. transfer characteristics I D = f (V GS )parameter: t p = 80 μs V DS ≥2 x I D x R DS(on)max
1
2
3
4
5
6
7
8
V
10
V GS
0 1 2 3 4 5 6 7 8 9 10 11
A 13 I D
Typ. forward transconductance g fs = f (I D )
parameter: t p = 80 μs,V DS ≥2 x I D x R DS(on)max
2468
A 12
I D
0 1 2 3 4 5 6 7 8 9 10 11 12 13
S 15 g fs
Gate threshold voltage
V GS (th) = ?(T j)
parameter: V GS = V DS, I D = 1 mA
V
GS(th)
-60-202060100°C160
T
j Drain-source on-resistance
R DS (on) = ?(T j)
parameter: I D = 6 A, V GS = 10 V
-60-202060100°C160
T
j
R
DS (on)
Typ. capacitances
C = f (V DS)
parameter:V GS = 0V, f = 1MHz
0510********V40
V
DS
10
10
10
10
C
Forward characteristics of reverse diode
I F = ?(V SD)
parameter: T j, t p = 80 μs
10
10
10
10
I
F
0.00.40.8 1.2 1.6 2.0 2.4V 3.0
V
SD
Avalanche energy E AS = ?(T j )parameter: I D = 9.5 A, V DD = 50 V R GS = 25 ?, L = 13.4 mH
20
406080100120°C 160T j
0 50 100 150 200 250 300 350 400 450 500 550 600
mJ 700 E
AS
Typ. gate charge V GS = ?(Q Gate )
parameter: I D puls = 14 A
4080120160nC 240
Q Gate
V GS
Drain-source breakdown voltage V (BR)DSS = ?(T j )
-60
-202060100°C 160
T j
450 460
470 480 490 500 510 520 530 540 550 560 570
580
V 600 V (BR)DSS