STB100NF03L-03中文资料
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February 2003
.
STB100NF03L-03 STP100NF03L-03
STB100NF03L-03-1
N-CHANNEL 30V - 0.0026 ? -100A D2PAK/I2PAK/TO-220
STripFET? II POWER MOSFET
s TYPICAL R DS (on) = 0.0026 ?s LOW THRESHOLD DRIVE s 100% AVALANCHE TESTED s LOGIC LEVEL DEVICE
s
THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1")
s
SURFACE-MOUNTING D 2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size?"strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark-able manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS TYPE
V DSS R DS(on)I D STB100NF03L-03STP100NF03L-03STB100NF03L-03-01
30 V 30 V 30 V
<0.0032 ?<0.0032 ?<0.0032 ?
100 A 100 A 100 A
ABSOLUTE MAXIMUM RATINGS
Pulse width limited by safe operating area
(1) Current Limited by Package
(2) Starting T j = 25 o C, I AR = 50A, V DD = 50V
Symbol Parameter
Value Unit V DS Drain-source Voltage (V GS = 0)30V V DGR Drain-gate Voltage (R GS = 20 k ?)30V V GS Gate- source Voltage
± 16V I D (1)Drain Current (continuous) at T C = 25°C 100A I D (1)Drain Current (continuous) at T C = 100°C 100A I DM (?)Drain Current (pulsed)400A P tot Total Dissipation at T C = 25°C 300W Derating Factor
2W/°C E AS (2) Single Pulse Avalanche Energy 1.9J T stg Storage Temperature
-55 to 175
°C
T j
Operating Junction Temperature
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
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THERMAL DATA
ELECTRICAL CHARACTERISTICS (T case = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
Rthj-case Rthj-amb
T l
Thermal Resistance Junction-case Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max Max
0.562.5300
°C/W °C/W °C
Symbol Parameter
Test Conditions
Min.Typ.
Max.
Unit V (BR)DSS Drain-source
Breakdown Voltage I D = 250 μA, V GS = 0
30
V I DSS Zero Gate Voltage
Drain Current (V GS = 0)V DS = Max Rating
V DS = Max Rating T C = 125°C 110μA μA I GSS
Gate-body Leakage Current (V DS = 0)
V GS = ± 16V
±100
nA
Symbol Parameter
Test Conditions
Min.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS = V GS I D = 250 μA 1
1.7
2.5V R DS(on)
Static Drain-source On Resistance
V GS = 10 V I D = 50 A V GS = 4.5 V
I D = 50 A
0.00260.0032
0.00320.0045
??
Symbol Parameter
Test Conditions
Min.Typ.Max.Unit g fs (*)Forward Transconductance V DS >I D(on)xR DS(on)max I D =10 A
10
S
C iss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
V DS = 25V f = 1 MHz V GS = 0
62001720300pF pF pF
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.(?)Pulse width limited by safe operating area.
Symbol Parameter
Test Conditions
Min.
Typ.Max.
Unit t d(on)t r Turn-on Time Rise Time
V DD = 15 V
I D = 50 A R G =4.7 ?
V GS = 4.5 V (Resistive Load, Figure 3)35315ns ns Q g Q gs Q gd
Total Gate Charge Gate-Source Charge Gate-Drain Charge
V DD = 24V I D = 100A V GS = 5V
8822.536
nC nC nC
Symbol Parameter
Test Conditions
Min.
Typ.Max.
Unit t d(off)t f Turn-off Delay Time Fall Time
V DD = 20 V
I D = 50 A R G =4.7?,
V GS = 4.5 V (Resistive Load, Figure 3)11595ns ns t r(Voff)t f t c
Off-Voltage Rise Time Fall Time
Cross-over Time
V clamp = 24 V I D = 100 A
R G =4.7?
V GS = 4.5 V (Inductive Load, Figure 5)
11055100
ns ns ns
Symbol Parameter
Test Conditions
Min.
Typ.
Max.Unit I SD I SDM (?)Source-drain Current
Source-drain Current (pulsed)100400A A V SD (*)Forward On Voltage I SD = 100 A
V GS = 0
1.3
V t rr Q rr I RRM
Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current
I SD = 100 A
di/dt = 100A/μs V DD = 20 V
T j = 150°C (see test circuit, Figure 5)
751504
ns nC A
ELECTRICAL CHARACTERISTICS (continued)
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
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Fig. 3: Switching Times Test Circuits For Resistive
Fig. 5: Test Circuit For Inductive Load Switching
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STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1DIM.mm.
inch.
MIN.TYP. MAX.
MIN.TYP. TYP .
A 4.4 4.60.1730.181A1 2.49 2.690.0980.106
A20.030.230.0010.009B 0.70.930.0280.037B2 1.14 1.70.0450.067C 0.450.60.0180.024C2 1.21 1.360.0480.054D 8.95
9.35
0.352
0.368
D18
0.315
E 10
10.4
0.394
0.409
E18.5
0.334
G 4.88 5.280.1920.208L 1515.850.5910.624L2 1.27 1.40.0500.055L3 1.4 1.750.0550.069M 2.4
3.2
0.094
0.126
R 0.4
0.015
V2
0°8°
0°
8°
D 2PAK MECHANICAL DATA
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STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1DIM.mm.
inch.
MIN.TYP. MAX.
MIN.TYP. TYP .
A 4.4 4.60.1730.181C 1.23 1.320.0480.051D 2.40 2.720.0940.107E 0.490.700.0190.027F 0.610.880.0240.034F1 1.14 1.700.0440.067F2 1.14 1.700.0440.067G 4.95 5.150.1940.203G1 2.40 2.700.0940.106H210
10.40
0.393
0.409
L216.400.645L328.90
1.137
L413140.5110.551L5 2.65 2.950.1040.116L615.2515.750.6000.620L7 6.20 6.600.2440.260L9 3.50 3.930.1370.154DIA
3.75
3.85
0.147
0.151
TO-220 MECHANICAL DATA
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
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DIM.
mm inch
MIN.MAX.MIN.MAX.
A010.510.70.4130.421
B015.715.90.6180.626
D 1.5 1.60.0590.063
D1 1.59 1.610.0620.063
E 1.65 1.850.0650.073
F11.411.60.4490.456
K0 4.8 5.00.1890.197
P0 3.9 4.10.1530.161
P111.912.10.4680.476
P2 1.9 2.100750.082
R50 1.574
T0.250.35.0.00980.0137
W23.724.30.9330.956
DIM.
mm inch
MIN.MAX.MIN.MAX.
A33012.992
B 1.50.059
C12.813.20.5040.520
D20.20.795
G24.426.40.960 1.039
N100 3.937
T30.4 1.197
BASE QTY BULK QTY
10001000
REEL MECHANICAL DATA
* on sales type
TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)*
D2PAK FOOTPRINT
TAPE MECHANICAL DATA
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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