FZT1151A中文资料
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
? The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 2 inches x 2 inches
*Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤ 2%.
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