IXTK120N25P中文资料

Maximum Ratings

V DSS T J = 25°C to 175°C

250

V V DGR T J = 25°C to 175°C; R GS = 1 M ?250V V GS Continuous ±20V V GSM Transient ±30V I D25T C = 25°C

120A I D(RMS)External lead current limit

75A I DM T C = 25°C, pulse width limited by T JM 300A I AR T C = 25°C 60A E AR T C = 25°C 60mJ E AS T C = 25°C

2.5J dv/dt I S ≤ I DM , di/dt ≤ 100 A/μs, V DD ≤ V DSS ,10V/ns T J ≤ 150°C, R G = 4 ?P D T C = 25°C

700

W T J -55 ... +175

°C T JM 175

°C T stg -55 ... +150

°C T L

1.6 mm (0.062 in.) from case for 10 s 300°C T SOLD Plastic body for 10 s 260

°C

M d Mounting torque

1.13/10Nm/lb.in.

Weight

G = Gate D = Drain S = Source TAB = Drain

DS99175E(12/05)

Symbol Test Conditions

Characteristic Values (T J = 25°C, unless otherwise specified) Min. Typ.Max.BV DSS V GS = 0 V, I D = 250 μA 250V V GS(th)V DS = V GS , I D = 500μA 2.5

5.0V I GSS V GS = ±20 V DC , V DS = 0±200nA I DSS V DS = V DSS 25

μA V GS = 0 V

T J = 125°C

250

μA R DS(on)

V GS = 10 V, I D = 0.5 I D2519

m ?

Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %

PolarHT TM

Power MOSFET

IXTK 120N25P

N-Channel Enhancement Mode Avalanche Rated

Features

l International standard package

Unclamped Inductive Switching (UIS)rated

Low package inductance -easy to drive and to protect

Advantages

l Easy to mount l

Space savings l

High power density

V DSS =250V I D25=120A R DS(on)≤24m ?

TO-264 (IXTK)

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol

Test Conditions Characteristic Values (T

= 25°C, unless otherwise specified)

Source-Drain Diode Characteristic Values

(T = 25°C, unless otherwise specified)

Millimeter Inches

Min.Max.Min.Max.4.82 5.13.190.202A1 2.54 2.89.100.114A2 2.00 2.10.079.0831.12 1.42.044.056b1 2.39 2.69.094.106b2 2.90 3.09.114.1220.530.83.021.03325.9126.16 1.020 1.03019.8119.96.780.7865.46 BSC .215 BSC 0.000.25.000.0100.000.25.000.01020.3220.83.800.820L1 2.29 2.59.090.1023.17 3.66.125.1446.07 6.27.239.247Q18.388.69.330.3423.81 4.32.150.170R1 1.78 2.29.070.0906.04 6.30.238.2481.57 1.83

.062.072

Dim.IXYS MOSFETs and IGBTs are covered by 4,835,5924,931,8445,049,9615,237,4816,162,6656,404,065 B16,683,3446,727,585 one or moreof the following U.S. patents:4,850,072

5,017,5085,063,3075,381,0256,259,123 B16,534,3436,710,405B26,759,6924,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2