IXFM12N100中文资料

Symbol Test Conditions

Maximum Ratings

V DSS T J = 25°C to 150°C

1000V V DGR T J = 25°C to 150°C; R GS = 1 M W 1000V V GS Continuous ±20V V GSM Transient ±30V I D25T C = 25°C

10N10010A 12N10012A 13N10012.5A I DM T C = 25°C, pulse width limited by T JM 10N10040A 12N10048A 13N10050A I AR

T C = 25°C

10N10010A 12N10012A 13N100

12.5A E

AR T C = 25°C

30mJ dv/dt I S ￡ I DM , di/dt ￡ 100 A/m s, V DD ￡ V DSS ,5V/ns T J ￡ 150°C, R G = 2 W P D T C = 25°C

300

W T J -55 ... +150°C T JM 150

°C T stg -55 ... +150

°C T L 1.6 mm (0.062 in.) from case for 10 s 300

°C

M d Mounting torque

1.13/10 Nm/lb.in.

Weight

TO-204 = 18 g, TO-247 = 6 g

Symbol Test Conditions

Characteristic Values

(T J = 25°C, unless otherwise specified)

min.typ.max.

V DSS V GS = 0 V, I D = 3 mA 1000V V GS(th)V DS = V GS , I D = 4 mA 2.0

4.5V I GSS V GS = ±20 V DC , V DS = 0±100

nA I DSS V DS = 0.8 ? V DSS T J

=25°C 250m A V GS = 0 V

T J =125°C

1mA R DS(on)

V GS = 10 V, I D = 0.5 ? I D25

10N100 1.20W 12N100 1.05W 13N100

0.90

Pulse test, t ￡ 300 m s, duty cycle d ￡ 2 %

N-Channel Enhancement Mode

High dv/dt, Low t rr , HDMOS TM Family

TO-247 AD (IXFH)

TO-204 AA (IXFM)

G = Gate, D = Drain,S = Source,

TAB = Drain

Features q

International standard packages q

Low R DS (on) HDMOS TM process q

Rugged polysilicon gate cell structure q

Unclamped Inductive Switching (UIS)rated q

Low package inductance -easy to drive and to protect q

Fast intrinsic Rectifier

Applications q

DC-DC converters q

Synchronous rectification q

Battery chargers q

Switched-mode and resonant-mode power supplies q

DC choppers q

AC motor control q

Temperature and lighting controls q

Low voltage relays

Advantages q

Easy to mount with 1 screw (TO-247)(isolated mounting screw hole)q

Space savings q

High power density

V DSS

I D25R DS(on)

IXFH/IXFM

N1001000 V 10 A 1.20 W IXFH/IXFM

N1001000 V 12 A 1.05 W IXFH

N100

1000 V 12.5 A 0.90 W t rr ￡ 250 ns

HiPerFET TM

Power MOSFETs

91531F(4/99)

IXYS reserves the right to change limits, test conditions, and dimensions.

TO-247 AD (IXFH) Outline

https://www.360docs.net/doc/1e8590331.html,limeter

Inches Min.Max.Min.Max.A 19.8120.320.7800.800B 20.8021.460.8190.845C 15.7516.260.6100.640D 3.55 3.650.1400.144E 4.32 5.490.1700.216F 5.4 6.20.2120.244G 1.65 2.130.0650.084H

- 4.5-0.177J 1.0 1.40.0400.055K 10.811.00.4260.433L 4.7 5.30.1850.209M 0.4

0.8

0.0160.031N

1.5

2.49

0.0870.102

https://www.360docs.net/doc/1e8590331.html,limeter Inches Min.Max.Min.Max.A 38.6139.12 1.520 1.540

B 19.4319.94-0.785

C 6.409.140.2520.360

D 0.97 1.090.0380.043

E 1.53 2.920.0600.115

F 30.15BSC 1.187BSC

G 10.6711.170.4200.440

H 5.21 5.710.2050.225J 16.6417.140.6550.675K 11.1812.190.4400.480Q 3.84 4.190.1510.165R 25.1625.900.991 1.020

Symbol

Test Conditions

Characteristic Values

(T J = 25°C, unless otherwise specified)

min.typ.max.

g fs V DS = 10 V; I D = 0.5 ? I D25, pulse test

10S C iss 4000

pF C oss V GS

= 0 V, V DS = 25 V, f = 1 MHz

310pF C rss 70pF t d(on)2150ns t r V GS

= 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25

3350ns t d(off)R G = 2 W (External),

62100ns t f 3250ns Q g(on)122

155nC Q gs V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25

3045nC Q gd 50

80nC R thJC 0.42K/W R thCK

0.25

K/W

Source-Drain Diode Characteristic Values

(T J = 25°C, unless otherwise specified)

Symbol Test Conditions min.typ.max.I S

V GS = 0 V

10N10010A 12N10012A 13N10012.5A I SM

Repetitive;

10N10040A pulse width limited by T JM

12N10048A 13N100

50A V SD I F = I S , V GS = 0 V,

1.5

Pulse test, t ￡ 300 m s, duty cycle d ￡ 2 %

t rr T J

=25°C 250ns T J =125°C 400ns Q RM T J

=25°C 1m C T J =125°C 2m C I RM

T J

=25°C 10A T J =125°C

I F = I S

-di/dt = 100 A/m s,V R = 100 V

Fig. 1Output Characteristics

Fig. 2 Input Admittance

Fig. 5Drain Current vs.

Fig. 6Temperature Dependence of

Case Temperature

Breakdown and Threshold Voltage

Fig. 3

R DS(on) vs. Drain Current

Fig. 4

Temperature Dependence of Drain to Source Resistance

T J - Degrees C

-50

-250255075100125150

B V /V G (t h ) - N o r m a l i z e d

0.50.6

0.70.80.91.01.1

1.2BV DSS

V GS(th)

T C - Degrees C -50

-250

100125150

I D - A m p e r e s

0246810121416

20T J - Degrees C

-50

-25

100125150

R D S (o n ) - N o r m a l i z e d

0.50

0.751.001.251.501.752.002.25

2.50

I D - Amperes 0

R D S (o n ) - N o r m a l i z e d

0.9

1.01.11.21.31.4

1.5

V GS - Volts

012345678910

I D - A m p e r e s

2468101214161820V DS - Volts 05101520

I D - A m p e r e s

24681012141618206V

7V V GS = 10V

T J = 25°C

Fig.7Gate Charge Characteristic Curve

Fig.8Capacitance Curves

Fig.9 Source Current vs. Source

to Drain Voltage

Fig.10 Transient Thermal Impedance

Gate Charge - nCoulombs

100

125

150

V G S - V o l t s

01234567

8910V SD - Volts

0.0

0.20.40.60.8 1.0 1.2 1.4

I D - A m p e r e s

02468101214161820V DS - Volts 0

101520

C a p a c i t a n c e - p F

050010001500200025003000

3500

40004500Time - Seconds

0.00001

0.00010.0010.010.1110

T h e r m a l R e s p o n s e - K /W

0.001

0.010.11

C rss

C oss C iss

f = 1MHz V DS = 25V