ATF-54143-TR1中文资料

Agilent ATF-54143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet

Description

Agilent Technologies’s ATF-54143 is a high dynamic range, low noise, E-PHEMT housed in a

4-lead SC-70 (SOT-343) surface mount plastic package.

The combination of high gain, high linearity and low noise makes the ATF-54143 ideal for cellular/PCS base stations, MMDS, and other systems in the 450 MHz to 6 GHz frequency range.

Features

?High linearity performance

?Enhancement Mode Technology[1]

?Low noise figure

?Excellent uniformity in product

specifications

?800 micron gate width

?Low cost surface mount small

plastic package SOT-343 (4 lead

SC-70)

?Tape-and-Reel packaging option

available

Specifications

2 GHz; 3V, 60mA (Typ.)

?36.2 dBm output 3rd order intercept

?20.4 dBm output power at 1 dB

gain compression

?0.5 dB noise figure

?16.6 dB associated gain

Applications

?Low noise amplifier for cellular/

PCS base stations

?LNA for WLAN, WLL/RLL and

MMDS applications

?General purpose discrete E-PHEMT

for other ultra low noise applications

Note:

1.Enhancement mode technology requires

positive Vgs, thereby eliminating the need for

the negative gate voltage associated with

conventional depletion mode devices. Surface Mount Package

SOT-343

Pin Connections and

Package Marking

SOURCE

DRAIN

GATE

SOURCE

Note:

T op View. Package marking provides orientation

and identification

“4F” = Device Code

“x” = Date code character

identifies month of manufacture.

ATF-54143 Absolute Maximum Ratings [1]Absolute Symbol

Parameter

Units

Maximum

V DS Drain - Source Voltage [2]V 5V GS Gate - Source Voltage [2]V -5 to 1V GD Gate Drain Voltage [2]V 5I DS Drain Current [2]

mA 120P diss Total Power Dissipation [3]mW 360P in max.RF Input Power dBm 10[5]I GS Gate Source Current mA 2[5]T CH Channel Temperature °C 150T STG Storage Temperature °C -65 to 150θjc

Thermal Resistance [4]

°C/W

162

Notes:

1.Operation of this device in excess of any one of these parameters may cause permanent damage.

2.Assumes DC quiescent conditions.

3.Source lead temperature is 25°C. Derate 6mW/°C for T L > 92°C.

4.Thermal resistance measured using

150°C Liquid Crystal Measurement method.5.The device can handle +10 dBm RF Input Power provided I GS is limited to 2 mA. I GS at P 1dB drive level is bias circuit dependent. See application section for additional information.

Product Consistency Distribution Charts [6, 7]

V DS (V)

Figure 1. Typical I-V Curves. (V GS = 0.1 V per step)

I D S (m A )

0.4V 0.5V

0.6V

0.7V

0.3V

146537

1201008060

40200

OIP3 (dBm)

Figure 2. OIP3 @ 2 GHz, 3 V, 60 mA.LSL = 33.0, Nominal = 36.575

160

120

GAIN (dB)

Figure 3. Gain @ 2 GHz, 3 V, 60 https://www.360docs.net/doc/4e10374350.html,L = 18.5, LSL = 15, Nominal = 16.6

141615

1719

200160

120

NF (dB)

Figure 4. NF @ 2 GHz, 3 V, 60 https://www.360docs.net/doc/4e10374350.html,L = 0.9, Nominal = 0.49

0.25

0.650.450.85 1.05

160

120

0Notes:

6.Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits.

7.Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on production test equipment. Circut losses have been de-embeaded from actual measurements.

ATF-54143 Electrical Specifications

T A = 25°C, RF parameters measured in a test circuit for a typical device

Symbol Parameter and Test Condition Units Min.Typ.[2]Max. Vgs Operational Gate Voltage Vds = 3V, Ids = 60 mA V0.40.590.75 Vth Threshold Voltage Vds = 3V, Ids = 4 mA V0.180.380.52 Idss Saturated Drain Current Vds = 3V, Vgs = 0VμA—15

Gm Transconductance Vds = 3V, gm = ?Idss/?Vgs;mmho230410560

?Vgs = 0.75-0.7 = 0.05V

Igss Gate Leakage Current Vgd = Vgs = -3VμA——200 NF Noise Figure[1] f = 2 GHz Vds = 3V, Ids = 60 mA dB—0.50.9

f = 900 MHz Vds = 3V, Ids = 60 mA dB—0.3—Ga Associated Gain[1] f = 2 GHz Vds = 3V, Ids = 60 mA dB1516.618.5

f = 900 MHz Vds = 3V, Ids = 60 mA dB—23.4—OIP3Output 3rd Order f = 2 GHz Vds = 3V, Ids = 60 mA dBm3336.2—Intercept Point[1] f = 900 MHz Vds = 3V, Ids = 60 mA dBm—35.5—

P1dB1dB Compressed f = 2 GHz Vds = 3V, Ids = 60 mA dBm—20.4—Output Power[1] f = 900 MHz Vds = 3V, Ids = 60 mA dBm—18.4—Notes:

1.Measurements obtained using production test board described in Figure 5.

2.T ypical values measured from a sample size of 450 parts from 9 wafers.

Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit repre-sents a trade-off between an optimal noise match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measurements.

ATF-54143 Typical Performance Curves

Figure 8. Gain vs. I ds and V ds Tuned for Max OIP3 and Fmin at 2 GHz.

Figure 10. OIP3 vs. I ds and V ds Tuned for Max OIP3 and Fmin at 2 GHz.

Figure 12. P1dB vs. I dq and V ds Tuned for Max OIP3 and Fmin at 2 GHz.Figure 9. Gain vs. I ds and V ds Tuned for Max OIP3 and Fmin at 900 MHz.

I ds (mA)

G A I N (d B )

0100

40208060191817

16151413

I ds (mA)

O I P 3 (d B m )

0100

40208060423732

27221712

I dq (mA)[1]P 1d B (d B m )

0100

40208060242220181614

I ds (mA)

G A I N (d B )

0100

40208060252423

2221201918

Figure 11. OIP3 vs. I ds and V ds Tuned for

Max OIP3 and Fmin at 900 MHz.

I ds (mA)

O I P 3 (d B m )

0100

4020806040

Figure 13. P1dB vs. I dq and V ds Tuned for Max OIP3 and Fmin at 900 MHz.Figure 14. Gain vs. Frequency and Temp Tuned for Max OIP3 and Fmin at 3V, 60 mA.

I dq (mA)[1]

P 1d B (d B m )

010040208060232221

2019181716

FREQUENCY (GHz)

G A I N (d B )

21453353025

2015105

Figure 7. Fmin vs. I ds and V ds Tuned for

Max OIP3 and Min NF at 900 MHz.

I d (mA)

F m i n (d B )

0100402080600.60.50.4

0.30.2

0.10

Figure 6. Fmin vs. I ds and V

ds Tuned for Max OIP3 and Fmin at 2 GHz.

I d (mA)

F m i n (d B )

0100402080600.7

0.6

0.5

0.4

0.3

0.2

Notes:

1.I dq represents the quiescent drain current without RF drive applied. Under low values of I ds , the application of RF drive will cause I d to increase substantially as P1dB is approached.

2.Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2GHz based on a set of 16 noise figure measure-ments made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.Refer to the noise parameter application section for more information.

ATF-54143 Typical Performance Curves, continued

Note:

1.Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measure-ments made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.Refer to the noise parameter application section for more information.

ATF-54143 Reflection Coefficient Parameters tuned for Maximum Output IP3,V DS = 3V, I DS = 60 mA Freq ΓOut_Mag.[1]ΓOut_Ang.[1]OIP3P1dB (GHz)

(Mag)

(Degrees)

(dBm)

0.90.01711535.5418.42.00.026-8536.2320.383.90.01317337.5420.285.8

0.025

102

35.75

18.09

Note:

1.Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.

Figure 17. P1dB vs. Frequency and Temp Tuned for Max OIP3 and Fmin at 3V, 60 mA.

FREQUENCY (GHz)

P 1d B (d B m )

2120.520

19.51918.51817.5

17Figure 18. Fmin [1] vs. Frequency and I

ds at 3V.

FREQUENCY (GHz)

F m i n (d B )

02145637

1.41.21.0

0.80.60.40.20

Figure 15. Fmin [2] vs. Frequency and Temp

Tuned for Max OIP3 and Fmin at 3V, 60 mA.

FREQUENCY (GHz)F m i n (d B )

214532

1.5

1.0

0.5

Figure 16. OIP3 vs. Frequency and Temp Tuned for Max OIP3 and Fmin at 3V, 60 mA.

FREQUENCY (GHz)

O I P 3 (d B m )

2145345403530252015

11211222GHz

Mag.Ang.

Mag.

Ang.

Mag.Ang.

0.10.99-17.627.9925.09168.50.00980.20.59-12.834.450.50.83-76.925.4718.77130.10.03652.40.44-54.627.170.90.72-11422.5213.371080.04740.40.33-78.724.541.00.70-120.621.8612.39103.90.04938.70.31-83.224.031.50.65-146.519.099.0187.40.05733.30.24-99.521.991.90.63-162.117.387.4076.60.06330.40.20-108.620.702.00.62-165.617.007.0874.20.06529.80.19-110.920.372.50.61178.515.33 5.8462.60.07226.60.15-122.619.093.00.61164.213.91 4.9651.50.08022.90.12-137.517.924.00.63138.411.59 3.80310.094140.10176.516.065.00.66116.59.65 3.0411.60.106 4.20.14138.414.576.00.6997.98.01 2.51-6.70.118-6.10.17117.613.287.00.7180.8 6.64 2.15-24.50.128-17.60.2098.612.258.00.7262.6 5.38 1.86-42.50.134-29.30.2273.411.429.00.7645.2 4.20 1.62-60.80.145-40.60.2752.810.4810.00.8328.2 2.84 1.39-79.80.150-56.10.3738.39.6611.00.8513.9 1.42 1.18-96.90.149-69.30.4525.88.9812.00.88-0.50.23 1.03-112.40.150-81.60.5112.78.3513.00.89-15.1-0.860.91-129.70.149-95.70.54-4.17.8414.00.87-31.6-2.180.78-1480.143-110.30.61-20.17.3615.00.88-46.1-3.850.64-164.80.132-1240.65-34.9 6.8716.00.87-54.8-5.610.52-178.40.121-134.60.70-45.6 6.3717.00.87-62.8-7.090.44170.10.116-144.10.73-55.9 5.8118.0

0.92

-73.6

-8.34

0.38

156.1

0.109

-157.4

0.76

-68.7

5.46

Freq F min Γopt Γopt R n/50

G a GHz

Mag.

Ang.

0.50.170.3434.800.0427.830.90.220.3253.000.0423.571.00.240.3260.500.0422.931.90.420.29108.100.0418.352.00.450.29111.100.0417.912.40.510.30136.000.0416.393.00.590.32169.900.0515.403.90.690.34-151.600.0513.265.00.900.45-119.500.0911.895.8 1.140.50-101.600.1610.956.0 1.170.52-99.600.1810.647.0 1.240.58-79.500.339.618.0 1.570.60-57.900.568.369.0 1.640.69-39.700.877.7710.0

1.8

0.80

-22.20

1.34

7.68

Notes:

1.F min values at 2GHz and higher are based on measurements while the F mins below 2 GHz have been extrapolated. The F min values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true F min is calculated.Refer to the noise parameter application section for more information.

2.S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate Typical Noise Parameters, V DS = 3V, I DS = 40 mA Figure 19. MSG/MAG and |S 21|2 vs. Frequency at 3V, 40 mA.

FREQUENCY (GHz)

M S G /M A G a n d S 21 (d B )

11211222GHz

Mag.Ang.

Mag.

Ang.

Mag.Ang.

0.10.99-18.928.8427.66167.60.0180.00.54-14.034.880.50.81-80.826.0420.05128.00.0352.40.40-58.827.840.90.71-117.922.9314.01106.20.0441.80.29-83.825.131.00.69-124.422.2412.94102.20.0540.40.27-88.524.591.50.64-149.819.409.3486.10.0536.10.21-105.222.461.90.62-164.917.667.6475.60.0633.80.17-114.721.052.00.62-168.317.287.3173.30.0633.30.17-117.020.712.50.60176.215.58 6.0161.80.0730.10.13-129.719.343.00.60162.314.15 5.1051.00.0826.50.11-146.518.154.00.62137.111.81 3.9030.80.0917.10.10165.216.175.00.66115.59.87 3.1111.70.11 6.80.14131.514.646.00.6997.28.22 2.58-6.40.12-3.90.18112.413.367.00.7080.2 6.85 2.20-24.00.13-15.80.2094.312.298.00.7262.2 5.58 1.90-41.80.14-28.00.2370.111.459.00.7645.0 4.40 1.66-59.90.15-39.60.2950.610.5310.00.8328.4 3.06 1.42-78.70.15-55.10.3836.89.7111.00.8513.9 1.60 1.20-95.80.15-68.60.4624.49.0412.00.88-0.20.43 1.05-111.10.15-80.90.5111.38.4313.00.89-14.6-0.650.93-128.00.15-94.90.55-5.27.9414.00.88-30.6-1.980.80-146.10.14-109.30.61-20.87.4315.00.88-45.0-3.620.66-162.70.13-122.90.66-35.0 6.9816.00.88-54.5-5.370.54-176.60.12-133.70.70-45.8 6.4917.00.88-62.5-6.830.46171.90.12-143.20.73-56.1 5.9518.0

0.92

-73.4

-8.01

0.40

157.9

0.11

-156.3

0.76

-68.4

5.66

Freq F min Γopt Γopt R n/50

G a GHz

Mag.

Ang.

0.50.150.3442.30.0428.500.90.200.3262.80.0424.181.00.220.3267.60.0423.471.90.420.27116.30.0418.672.00.450.27120.10.0418.292.40.520.26145.80.0416.653.00.590.29178.00.0515.563.90.700.36-145.40.0513.535.00.930.47-116.00.1012.135.8 1.160.52-98.90.1811.106.0 1.190.55-96.50.2010.957.0 1.260.60-77.10.379.738.0 1.630.62-56.10.628.569.0 1.690.70-38.50.957.9710.0

1.73

0.79

-21.5

1.45

7.76

Notes:

2.S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate Typical Noise Parameters, V DS = 3V, I DS = 60 mA Figure 20. MSG/MAG and |S 21|2 vs. Frequency at 3V, 60 mA.

FREQUENCY (GHz)

M S G /M A G a n d S 21 (d B )

11211222GHz

Mag.Ang.

Mag.

Ang.

Mag.Ang.

0.10.98-20.428.3226.05167.10.0179.40.26-27.634.160.50.80-85.925.3218.45126.80.0453.30.29-104.927.100.90.72-123.422.1012.73105.20.0543.90.30-138.824.151.00.70-129.921.4011.75101.30.0542.70.30-144.323.631.50.66-154.618.558.4685.40.0638.60.30-165.021.351.90.65-169.516.81 6.9274.90.0735.70.29-177.619.892.00.64-172.816.42 6.6272.60.0735.00.29179.419.522.50.64172.114.69 5.4261.10.0930.60.29164.418.053.00.63158.513.24 4.5950.10.1025.50.29150.216.804.00.66133.810.81 3.4729.90.1213.40.33126.114.765.00.69112.58.74 2.7411.10.13 1.20.39107.813.206.00.7294.37.03 2.25-6.50.14-11.30.4291.811.967.00.7377.4 5.63 1.91-23.50.15-24.50.4475.510.978.00.7459.4 4.26 1.63-41.10.16-38.10.4755.510.149.00.7842.1 2.98 1.41-58.70.17-51.10.5237.89.3210.00.8425.6 1.51 1.19-76.40.16-66.80.5924.08.6011.00.8611.40.00 1.00-92.00.16-79.80.6411.88.0412.00.88-2.6-1.150.88-105.90.16-91.70.68-0.87.5213.00.89-17.0-2.180.78-121.70.15-105.60.70-16.77.1214.00.87-33.3-3.480.67-138.70.14-119.50.73-31.7 6.7715.00.87-47.3-5.020.56-153.90.13-132.30.76-44.9 6.4216.00.86-55.6-6.650.47-165.90.12-141.70.78-54.9 5.9917.00.86-63.4-7.920.40-175.90.11-150.40.79-64.2 5.5518.0

0.91

-74.2

-8.92

0.36

171.2

0.10

-163.0

0.81

-76.2

5.37

Freq F min Γopt Γopt R n/50

G a GHz

Mag.

Ang.

0.50.190.2366.90.0427.930.90.240.2484.30.0424.131.00.250.2587.30.0423.301.90.430.28134.80.0418.552.00.420.29138.80.0418.152.40.510.30159.50.0316.443.00.610.35-1730.0315.133.90.700.41-141.60.0612.975.00.940.52-113.50.1311.425.8 1.200.56-97.10.2310.486.0 1.260.58-94.80.2610.117.0 1.340.62-75.80.468.868.0 1.740.63-55.50.767.599.0 1.820.71-37.7 1.17 6.9710.0

1.94

0.79

-20.8

1.74

6.65

Notes:

2.S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source Typical Noise Parameters, V DS = 3V, I DS = 80 mA Figure 21. MSG/MAG and |S 21|2 vs. Frequency at 3V, 80 mA.

FREQUENCY (GHz)

M S G /M A G a n d S 21 (d B )

11211222GHz

Mag.Ang.

Mag.

Ang.

Mag.Ang.

0.10.99-18.628.8827.80167.80.0180.10.58-12.635.410.50.81-80.226.1120.22128.30.0352.40.42-52.328.140.90.71-117.323.0114.15106.40.0441.70.31-73.325.381.00.69-123.822.3313.07102.40.0440.20.29-76.924.831.50.64-149.219.499.4386.20.0536.10.22-89.422.751.90.62-164.517.757.7275.70.0634.00.18-95.521.322.00.61-167.817.367.3873.30.0633.50.18-97.021.042.50.60176.615.66 6.0761.90.0730.70.14-104.019.643.00.60162.614.23 5.1551.10.0727.30.11-113.418.484.00.62137.411.91 3.9430.90.0918.70.07-154.716.465.00.65115.910.00 3.1611.70.109.00.09152.514.966.00.6897.68.36 2.62-6.60.11-1.40.12127.913.617.00.7080.67.01 2.24-24.30.12-12.90.15106.912.578.00.7262.6 5.76 1.94-42.30.13-24.70.1778.911.679.00.7645.4 4.60 1.70-60.50.14-36.10.2356.810.7210.00.8328.5 3.28 1.46-79.60.15-51.80.3242.19.8811.00.8614.1 1.87 1.24-97.00.15-65.40.4129.49.1712.00.88-0.40.69 1.08-112.80.15-78.00.4716.08.5313.00.90-14.9-0.390.96-130.20.15-92.20.51-1.17.9914.00.87-31.4-1.720.82-148.80.15-107.30.58-17.67.4615.00.88-46.0-3.380.68-166.00.14-121.20.63-32.6 6.9716.00.88-54.8-5.170.55179.80.13-132.20.69-43.7 6.4117.00.87-62.8-6.730.46168.40.12-142.30.72-54.2 5.8518.0

0.92

-73.7

-7.93

0.40

154.3

0.11

-155.6

0.75

-67.2

5.54

Freq F min Γopt Γopt R n/50

G a GHz

Mag.

Ang.

0.50.170.3334.300.0328.020.90.250.3160.300.0424.121.00.270.3168.100.0423.431.90.450.27115.000.0418.722.00.490.27119.800.0418.352.40.560.26143.500.0416.713.00.630.28176.800.0415.583.90.730.35-145.900.0513.625.00.960.47-116.200.1112.255.8 1.200.52-98.800.1911.236.0 1.230.54-96.900.2111.027.0 1.330.60-77.400.389.948.0 1.660.63-56.200.648.819.0 1.710.71-38.600.998.2210.0

1.85

0.82

-21.30

1.51

8.12

Notes:

2.S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate Typical Noise Parameters, V DS = 4V, I DS = 60 mA Figure 22. MSG/MAG and |S 21|2 vs. Frequency at 4V, 60 mA.

FREQUENCY (GHz)

M S G /M A G a n d S 21 (d B )

ATF-54143 Applications Information

Introduction

Agilent Technologies’s ATF-54143 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in the VHF through 6 GHz frequency range. As opposed to a typical depletion mode PHEMT where the gate must be made negative with respect to the source for proper operation, an enhancement mode PHEMT requires that the gate be made more positive than the source for normal operation. Therefore a negative power supply voltage is not required for an enhancement mode device. Biasing an enhancement mode PHEMT is much like biasing the typical bipolar junction transistor. Instead of a 0.7V base to emitter voltage, the ATF-54143 enhance-ment mode PHEMT requires about a 0.6V potential between the gate and source for a nominal drain current of 60 mA. Matching Networks

The techniques for impedance matching an enhancement mode device are very similar to those for matching a depletion mode device. The only difference is in the method of supplying gate bias. S and Noise Parameters for various bias conditions are listed in this data sheet. The circuit shown in Figure 1 shows a typical LNA circuit normally used for 900 and 1900 MHz applications (Consult the Agilent Technologies website for application notes covering specific applications). High pass impedance matching networks consisting of L1/C1 and L4/C4 provide the appropriate match for noise figure, gain, S11 and S22. The high pass structure also provides low frequency gain reduction which can be beneficial from the standpoint of improving

Figure 1. Typical ATF-54143 LNA with Passive

Biasing.

Capacitors C2 and C5 provide a

low impedance in-band RF

bypass for the matching net-

works. Resistors R3 and R4

provide a very important low

frequency termination for the

device. The resistive termination

improves low frequency stability.

Capacitors C3 and C6 provide

the low frequency RF bypass for

resistors R3 and R4. Their value

should be chosen carefully as C3

and C6 also provide a termina-

tion for low frequency mixing

products. These mixing products

are as a result of two or more in-

band signals mixing and produc-

ing third order in-band distortion

products. The low frequency or

difference mixing products are

bypassed by C3 and C6. For best

suppression of third order

distortion products based on the

CDMA 1.25 MHz signal spacing,

C3 and C6 should be 0.1 μF in

value. Smaller values of capaci-

tance will not suppress the

generation of the 1.25 MHz

difference signal and as a result

will show up as poorer two tone

IP3 results.

Bias Networks

One of the major advantages of

the enhancement mode technol-

ogy is that it allows the designer

to be able to dc ground the

source leads and then merely

apply a positive voltage on the

gate to set the desired amount of

quiescent drain current I d.

Whereas a depletion mode

PHEMT pulls maximum drain

current when V gs = 0V, an en-

hancement mode PHEMT pulls

only a small amount of leakage

current when V gs=0V. Only when

V gs is increased above V to, the

device threshold voltage, will

drain current start to flow. At a

V ds of 3V and a nominal V gs of

0.6V, the drain current I d will be

approximately 60 mA. The data

sheet suggests a minimum and

maximum V gs over which the

desired amount of drain current

will be achieved. It is also impor-

tant to note that if the gate

terminal is left open circuited,

the device will pull some amount

of drain current due to leakage

current creating a voltage differ-

ential between the gate and

source terminals.

Passive Biasing

Passive biasing of the ATF-54143

is accomplished by the use of a

voltage divider consisting of R1

and R2. The voltage for the

divider is derived from the drain

voltage which provides a form of

voltage feedback through the use

of R3 to help keep drain current

constant. Resistor R5 (approxi-

mately 10k?) provides current

limiting for the gate of enhance-

ment mode devices such as the

ATF-54143. This is especially

important when the device is

driven to P1dB or P SAT.

Resistor R3 is calculated based

on desired V ds, I ds and available

power supply voltage.

R3 =

– V ds

(1)

I ds + I

is the power supply voltage.

V ds is the device drain to source

voltage.

I ds is the desired drain current.

is the current flowing through

the R1/R2 resistor voltage

The values of resistors R1 and R2are calculated with the following formulas R1 = V gs (2)

I BB

R2 =

(V ds – V gs ) R1

(3)

V gs

Example Circuit V DD = 5V V ds = 3V I ds = 60 mA V gs = 0.59V

Choose I BB to be at least 10X the normal expected gate leakage current. I BB was chosen to be 2mA for this example. Using equations (1), (2), and (3) the resistors are calculated as follows R1 = 295?R2 = 1205?R3 = 32.3?

Active Biasing

Active biasing provides a means of keeping the quiescent bias point constant over temperature and constant over lot to lot variations in device dc perfor-mance. The advantage of the

active biasing of an enhancement mode PHEMT versus a depletion mode PHEMT is that a negative power source is not required. The techniques of active biasing an enhancement mode device are very similar to those used to bias a bipolar junction transistor.

Figure 2. Typical ATF-54143 LNA with Active Biasing.

An active bias scheme is shown in Figure 2. R1 and R2 provide a constant voltage source at the base of a PNP transistor at Q2.The constant voltage at the base of Q2 is raised by 0.7 volts at the emitter. The constant emitter voltage plus the regulated V DD supply are present across resis-tor R3. Constant voltage across R3 provides a constant current supply for the drain current.Resistors R1 and R2 are used to set the desired Vds. The com-bined series value of these

resistors also sets the amount of extra current consumed by the bias network. The equations that describe the circuit’s operation are as follows.

V E = V ds + (I ds ? R4) (1)R3 =

V DD – V E

(2)

I ds

V B = V E – V BE (3)V B = R1 V DD

(4)

R1 + R2V DD = I BB (R1 + R2) (5)Rearranging equation (4)

provides the following formula R2 =

R 1 (V DD – V B )

(4A)

V B

and rearranging equation (5)provides the following formula R1 = V DD

(5A) 9 I BB (1 +

V DD – V B

)

V B

Example Circuit V DD = 5V

V ds = 3V I ds = 60 mA R4 = 10?V BE = 0.7V

Equation (1) calculates the

required voltage at the emitter of the PNP transistor based on desired V ds and I ds through resistor R4 to be 3.6V. Equation (2) calculates the value of resis-tor R3 which determines the drain current I ds . In the example R3=23.3?. Equation (3) calcu-lates the voltage required at the junction of resistors R1 and R2.This voltage plus the step-up of the base emitter junction deter-mines the regulated V ds . Equa-tions (4) and (5) are solved

simultaneously to determine the value of resistors R1 and R2. In the example R1=1450? and R2=1050?. R7 is chosen to be 1k ?. This resistor keeps a small amount of current flowing

through Q2 to help maintain bias stability. R6 is chosen to be

10k ?. This value of resistance is necessary to limit Q1 gate

current in the presence of high RF drive level (especially when Q1 is driven to P 1dB gain com-pression point).

T=0.15 mil TanD=0Rough=0 mil

NFET=yes PFET=no Vto=0.3Beta=0.9Lambda=82e-3

Alpha=13

Tau=

Tnom=16.85

Idstc=

Ucrit=-0.72

Vgexp=1.91Gamds=1e-4Vtotc=Betatce=

Rgs=0.25 Ohm

Rf=Gscap=2Cgs=1.73 pF Cgd=0.255 pF Gdcap=2

Fc=0.65Rgd=0.25 Ohm Rd=1.0125 Ohm Rg=1.0 Ohm Rs=0.3375 Ohm Ld=Lg=0.18 nH Ls=

Cds=0.27 pF Rc=250 Ohm

Crf=0.1 F Gsfwd=Gsrev=Gdfwd=Gdrev=R1=R2=Vbi=0.8Vbr=Vjr=Is=Ir=Imax=Xti=Eg=

Fnc=1 MHz R=0.08P=0.2C=0.1

Taumdl=no wVgfwd=wBvgs=wBvgd=wBvds=wldsmax=wPmax=AllParams=

Advanced_Curtice2_Model MESFETM1ATF-54143 Die Model

ATF-54143 curtice ADS Model

Designing with S and Noise Parameters and the Non-Linear Model The non-linear model describing the ATF-54143 includes both the die and associated package model. The package model includes the effect of the pins but does not include the effect of the additional source inductance associated with grounding the source leads through the printed circuit board. The device S and Noise Parameters do include the effect of 0.020inch thickness printed circuit board vias. When comparing simulation results between the measured S param-

VIA2

D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0

W=40.0 mil

T=0.15 mil

Rho=1.0

W=40.0 mil

H=25.0 mil

Er=9.6

Mur=1

Cond=1.0E+50

Hu=3.9e+034 mil

T=0.15 mil

TanD=0

Rough=0 mil

VIA2

D=20.0 mil

H=25.0 mil

T=0.15 mil

eters and the simulated non-

linear model, be sure to include

the effect of the printed circuit

board to get an accurate compari-son. This is shown schematically

in Figure 3.

For Further Information

The information presented here is

an introduction to the use of the

ATF-54143 enhancement mode PHEMT. More detailed application circuit information is available

from Agilent Technologies.

Consult the web page or your

local Agilent Technologies sales representative.

Figure 3. Adding Vias to the ATF-54143 Non-Linear Model for Comparison to Measured S and Noise Parameters.

Noise Parameter Applications Information

F min values at 2GHz and higher are based on measurements while the F mins below 2 GHz have been extrapolated. The F min values are based on a set of

16noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements, a true F min is calculated. F min repre-sents the true minimum noise figure of the device when the device is presented with an impedance matching network that transforms the source impedance, typically 50?, to an impedance represented by the reflection coefficient G o. The designer must design a matching network that will present G o to the device with minimal associ-ated circuit losses. The noise figure of the completed amplifier is equal to the noise figure of the device plus the losses of the matching network preceding the device. The noise figure of the device is equal to F min only when the device is presented with G o.If the reflection coefficient of the

matching network is other than

, then the noise figure of the

device will be greater than F min

based on the following equation.

NF = F min + 4 R n |Γs – Γo | 2

Zo (|1 + Γo|2)(1 -|Γs|2)

Where R n/Z o is the normalized

noise resistance, Γo is the opti-

mum reflection coefficient

required to produce F min and Γs is

the reflection coefficient of the

source impedance actually

presented to the device. The

losses of the matching networks

are non-zero and they will also

add to the noise figure of the

device creating a higher amplifier

noise figure. The losses of the

matching networks are related to

the Q of the components and

associated printed circuit board

loss. Γo is typically fairly low at

higher frequencies and increases

as frequency is lowered. Larger

gate width devices will typically

have a lower Γo as compared to

narrower gate width devices.

Typically for FETs, the higher Γo

usually infers that an impedance

much higher than 50? is required

for the device to produce F min. At

VHF frequencies and even lower

L Band frequencies, the required

impedance can be in the vicinity

of several thousand ohms. Match-

ing to such a high impedance

requires very hi-Q components in

order to minimize circuit losses.

As an example at 900 MHz, when

airwwound coils (Q>100) are

used for matching networks, the

loss can still be up to 0.25 dB

which will add directly to the

noise figure of the device. Using

muiltilayer molded inductors with

Qs in the 30 to 50 range results in

additional loss over the airwound

coil. Losses as high as 0.5 dB or

greater add to the typical 0.15 dB

F min of the device creating an

amplifier noise figure of nearly

0.65 dB. A discussion concerning

calculated and measured circuit

losses and their effect on ampli-

fier noise figure is covered in

Agilent Application 1085.

DIMENSIONS ARE IN MILLIMETERS (INCHES)

DIMENSIONS

MIN.

0.80 (0.031)

0 (0)

0.25 (0.010)

0.10 (0.004)

1.90 (0.075)

2.00 (0.079)

0.55 (0.022)

0.450 TYP (0.018)

1.15 (0.045)

0.10 (0.004)

MAX.1.00 (0.039)0.10 (0.004)0.35 (0.014)0.20 (0.008)2.10 (0.083)2.20 (0.087)0.65 (0.025)1.35 (0.053)0.35 (0.014)10SYMBOL

A A1b C D E e h E1L θPackage Dimensions Outline 43

SOT-343 (SC70 4-lead)

Ordering Information Part Number

No. of Devices

Container

ATF-54143-TR130007” Reel ATF-54143-TR21000013”Reel ATF-54143-BLK

100

antistatic bag

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BOTTOM HOLE DIAMETER A 0B 0K 0P D 1 2.24 ± 0.102.34 ± 0.101.22 ± 0.104.00 ± 0.101.00 + 0.250.088 ± 0.0040.092 ± 0.0040.048 ± 0.0040.157 ± 0.0040.039 + 0.010CAVITY

DIAMETER PITCH POSITION D P 0E 1.55 ± 0.054.00 ± 0.101.75 ± 0.100.061 ± 0.0020.157 ± 0.0040.069 ± 0.004PERFORATION

WIDTH

THICKNESS W t 18.00 ± 0.300.255 ± 0.0130.315 ± 0.0120.010 ± 0.0005CARRIER TAPE CAVITY TO PERFORATION (WIDTH DIRECTION)CAVITY TO PERFORATION (LENGTH DIRECTION)

F P 2

3.50 ± 0.052.00 ± 0.05

0.138 ± 0.0020.079 ± 0.002

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WIDTH

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C T t 5.4 ± 0.100.062 ± 0.0010.205 ± 0.0040.0025 ± 0.00004COVER TAPE Device Orientation

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