LM394BH中文资料

TL H 9241LM194 LM394Supermatch Pair

December 1994

LM194 LM394Supermatch Pair

General Description

The LM194and LM394are junction isolated ultra well-matched monolithic NPN transistor pairs with an order of magnitude improvement in matching over conventional tran-sistor pairs This was accomplished by advanced linear pro-cessing and a unique new device structure

Electrical characteristics of these devices such as drift ver-sus initial offset voltage noise and the exponential relation-ship of base-emitter voltage to collector current closely ap-proach those of a theoretical transistor Extrinsic emitter and base resistances are much lower than presently avail-able pairs either monolithic or discrete giving extremely low noise and theoretical operation over a wide current range Most parameters are guaranteed over a current range of 1m A to 1mA and 0V up to 40V collector-base voltage ensuring superior performance in nearly all applications To guarantee long term stability of matching parameters internal clamp diodes have been added across the emitter-base junction of each transistor These prevent degradation due to reverse biased emitter current the most common cause of field failures in matched devices The parasitic iso-lation junction formed by the diodes also clamps the sub-strate region to the most negative emitter to ensure com-plete isolation between devices

The LM194and LM394will provide a considerable improve-ment in performance in most applications requiring a closely

matched transistor pair In many cases trimming can be eliminated entirely improving reliability and decreasing costs Additionally the low noise and high gain make this device attractive even where matching is not critical

The LM194and LM394 LM394B LM394C are available in an isolated header 6-lead TO-5metal can package The LM394 LM394B LM394C are available in an 8-pin plastic dual-in-line package The LM194is identical to the LM394except for tighter electrical specifications and wider temper-ature range

Features

Y Emitter-base voltage matched to 50m V Y Offset voltage drift less than 0 1m V C Y Current gain (h FE )matched to 2%

Y Common-mode rejection ratio greater than 120dB

Parameters guaranteed over 1m A to 1mA collector current

Y Extremely low noise

Superior logging characteristics compared to conventional pairs

Plug-in replacement for presently available devices

Typical Applications

Low Cost Accurate Square Root Circuit

I OUT e 10b 5 010V IN

TL H 9241–1

Low Cost Accurate Squaring Circuit

I OUT e 10b 6(V IN )2

TL H 9241–2

Trim for full scale accuracy

C 1995National Semiconductor Corporation RRD-B30M115 Printed in U S A

Absolute Maximum Ratings

If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications (Note4)

Collector Current20mA Collector-Emitter Voltage V MAX Collector-Emitter Voltage35V LM394C20V Collector-Base Voltage35V LM394C20V Collector-Substrate Voltage35V LM394C20V Collector-Collector Voltage35V LM394C20V Base-Emitter Current g10mA Power Dissipation500mW Junction Temperature

LM194b55 C to a125 C LM394 LM394B LM394C b25 C to a85 C Storage Temperature Range b65 C to a150 C Soldering Information

Metal Can Package(10sec )260 C Dual-In-Line Package(10sec )260 C Small Outline Package

Vapor Phase(60sec )215 C Infrared(15sec )220 C See AN-450‘‘Surface Mounting and their Effects on Prod-uct Reliability’’for other methods of soldering surface mount devices

Electrical Characteristics(T J e25 C)

Parameter Conditions

LM194LM394LM394B 394C

Units Min Typ Max Min Typ Max Min Typ Max

Current Gain(h FE)V CB e0V to V MAX(Note1)

I C e1mA350700300700225500

I C e100m A350550250550200400

I C e10m A300450200450150300

I C e1m A200300150300100200

Current Gain Match V CB e0V to V MAX

(h FE Match)I C e10m A to1mA0 520 541 05%

100 D I B h FE(MIN)

I C

I C e1m A1 01 02 0%

Emitter-Base Offset V CB e0

251002515050200m V Voltage I C e1m A to1mA

Change in Emitter-Base(Note1)

Offset Voltage vs I C e1m A to1mA

1025105010100m V Collector-Base Voltage V CB e0V to V MAX

(CMRR)

Change in Emitter-Base V CB e0V

525550550m V Offset Voltage vs I C e1m A to0 3mA

Collector Current

Emitter-Base Offset I C e10m A to1mA(Note2)

0 080 30 081 00 21 5m V C Voltage Temperature I C1e I C2

Drift V OS Trimmed to0at25 C0 030 10 030 30 030 5m V C

Logging Conformity I C e3nA to300m A

150150150m V V CB e0 (Note3)

Collector-Base Leakage V CB e V MAX0 050 250 050 50 050 5nA

Collector-Collector V CC e V MAX0 12 00 15 00 15 0nA Leakage

Input Voltage Noise I C e100m A V CB e0V

1 81 81 8nV 0Hz

f e100Hz to100kHz

Collector to Emitter I C e1mA I B e10m A0 20 20 2V Saturation Voltage I C e1mA I B e100m A0 10 10 1V Note1 Collector-base voltage is swept from0to V MAX at a collector current of1m A 10m A 100m A and1mA

Note2 Offset voltage drift with V OS e0at T A e25 C is valid only when the ratio of I C1to I C2is adjusted to give the initial zero offset This ratio must be held to within0 003%over the entire temperature range Measurements taken at a25 C and temperature extremes

Note3 Logging conformity is measured by computing the best fit to a true exponential and expressing the error as a base-emitter voltage deviation

Note4 Refer to RETS194X drawing of military LM194H version for specifications

Typical Applications(Continued)

Fast Accurate Logging Amplifier V IN e10V to0 1mV or I IN e1mA to10nA

TL H 9241–3

1k X(g1%)at25 C a3500ppm C

Available from Vishay Ultronix

Grand Junction CO Q81Series

V OUT e b log10 V IN V REF J

Voltage Controlled Variable Gain Amplifier

TL H 9241–4 R8–R10and D2provide a temperature Distortion k0 1%

independent gain control Bandwidth l1MHz

G e b336V1(dB)100dB gain range

Typical Applications (Continued)

Precision Low Drift Operational Amplifier

Common-mode range 10V I BIAS 25nA I OS 0 5nA

V OS (untrimmed)125m V (D V OS D T)0 2m V C CMRR 120dB A VOL 2 500 000 C 200pF for unity gain C 30pF for A V 10C 5pF for A V 100TL H 9241–5

0pF for A V 1000

High Accuracy One Quadrant Multiplier Divider

TL H 9241–6

V OUT e (X)(Y)

(Z) positive inputs only

Typical linearity 0 1%

Typical Applications (Continued)

High Performance Instrumentation Amplifier

Gain e

106R S

TL H 9241–7

Performance Characteristics

G e 10 000G e 1 000G e 100G e 10Linearity of Gain (g 10V Output)

s 0 01s 0 01s 0 02s 0 05%

Common-Mode Rejection Ratio (60Hz)t 120t 120t 110t 90dB Common-Mode Rejection Ratio (1kHz)t 110t 110t 90t 70

Power Supply Rejection Ratio a Supply l 110l 110l 110l 110dB b Supply

l 110

l 90

l 70

Bandwidth (b 3dB)50505050kHz Slew Rate

0 30 30 30 3V m s Offset Voltage Drift

s 0 25s 0 42s 10m V C Common-Mode Input Resistance l 109l 109l 109l 109X Differential Input Resistance

l 3x 108

l 3x 108l 3x 108l 3x 108X

Input Referred Noise (100Hz s f s 10kHz)561270

0Hz

Input Bias Current 75757575nA Input Offset Current 1 51 51 51 5nA Common-Mode Range

g 11g 11g 11g 10V Output Swing (R L e 10k X )

g 13

g 13g 13g 13V

Assumes s 5ppm C tracking of resistors

Typical Performance Characteristics

Small Signal Current Gain vs Collector Current

DC Current Gain vs Temperature

Unity Gain Frequency (f t )vs Collector Current

Offset Voltage Drift vs Initial Offset Voltage Base-Emitter On Voltage vs Collector Current

Resistance (h ie )

Small Signal Input vs Collector Current

vs Collector Current

Small Signal Output Conductance vs Collector Current

Saturation Voltage Collector-Emitter Frequency

Input Voltage Noise vs vs Frequency Base Current Noise Collector Current

Noise Figure vs Bias Voltage

Capacitance vs Reverse Collector to Collector TL H 9241–8

Typical Performance Characteristics(Continued)

Collector to Collector Capacitance vs Collector-Substrate Voltage Emitter-Base Capacitance vs

Reverse Bias Voltage

Collector-Base Capacitance vs

Reverse Bias Voltage

Collector-Base Leakage vs Temperature

Collector to Collector Leakage

vs Temperature

Offset Voltage Long Term

Stability at High Temperature

TL H 9241–9 Emitter-Base Log Conformity

TL H 9241–10

Low Frequency Noise of Differential Pair

TL H 9241–11 Unit must be in still air environment so that differential

lead temperature is held to less than0 0003 C

Connection Diagrams

Metal Can Package

TL H 9241–12

Top View

Order Number LM194H 883 LM394H LM394BH or LM394CH See NS Package Number H06C

Dual-In-Line and Small Outline Packages

TL H 9241–13

Top View

Order Number LM394N or LM394CN See NS Package Number N08E

Available per SMD 5962-8777701

Physical Dimensions inches(millimeters)

Metal Can Package(H)

Order Number LM194H 883 LM394H LM394BH or LM394CH

NS Package Number H06C

L M 194 L M 394S u p e r m a t c h P a i r

Physical Dimensions inches (millimeters)(Continued)

Molded Dual-In-Line Package (N)Order Number LM394CN or LM394N

NS Package Number N08E

LIFE SUPPORT POLICY

NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or 2 A critical component is any component of a life systems which (a)are intended for surgical implant support device or system whose failure to perform can into the body or (b)support or sustain life and whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system or to affect its safety or with instructions for use provided in the labeling can effectiveness

be reasonably expected to result in a significant injury to the user

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