AOI472A规格书

= 10V) = 10V)Symbol Symbol

Typ Max 15204150R θJC 2.13Thermal Characteristics Units Maximum Junction-to-Ambient A t ≤ 10s °C/W Parameter

R θJA AOI472A

Absolute Maximum Ratings T A =25°C unless otherwise noted

Maximum Junction-to-Case

Steady-State

°C/W

Steady-State °C/W Maximum Junction-to-Ambient A D G

Top View

Symbol

Min Typ Max Units BV DSS 25

V DS =25V, V GS =0V

10T J =55°C

50I GSS 100

nA V GS(th)Gate Threshold Voltage 1.22

2.5

V I D(ON)

100

A 4.3

5.2T J =125°C

6.2

7.489.5

m ?g

FS 65S V SD 0.7

1V I S

A C iss 1500

18002200pF C oss 340445580pF C rss 200285400pF R g

1.1 1.6

2.4?Q g (10V)25

3140nC Q g (4.5V)121520nC Q gs 3.5 4.87nC Q gd 6.5

8.913nC t D(on)8ns t r 10.4ns t D(off)29ns t f 9

ns t rr 9.51215ns Q rr

26nC

Repetitive avalanche energy L=50uH C

Rev0 : Dec-08

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Charge I F =30A, dI/dt=500A/μs

Maximum Body-Diode Continuous Current

Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime V GS =10V, V DS =12.5V, R L =0.42?, R GEN =3?Gate resistance

V GS =0V, V DS =0V, f=1MHz

Turn-Off Fall Time

Total Gate Charge V GS =10V, V DS =12.5V, I D =30A

Gate Source Charge Gate Drain Charge Total Gate Charge m ?I S =1A,V GS =0V V DS =5V, I D =30A

V GS =4.5V, I D =20A

Forward Transconductance

Diode Forward Voltage R DS(ON)Static Drain-Source On-Resistance

I DSS μA V DS =V GS I D =250μA V DS =0V, V GS = ±20V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter

Conditions Body Diode Reverse Recovery Time

Drain-Source Breakdown Voltage On state drain current

I D =250μA, V GS =0V V GS =10V, V DS =5V V GS =10V, I D =30A

Reverse Transfer Capacitance I F =30A, dI/dt=500A/μs

V GS =0V, V DS =12.5V, f=1MHz SWITCHING PARAMETERS A. The value of R θJA is measured with the device mounted on 1in 2

FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial T J =25°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is limited by bond-wires.

H. These tests are performed with the device mounted on 1 in 2

FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

020

6080

V GS (Volts)

Figure 2: Transfer Characteristics (Note E)

I D (A )

02040

6080

100

V DS (Volts)

Fig 1: On-Region Characteristics (Note E)

I D (A )

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1520253035

Q g (nC)

V G S (V o l t s )

0400

800120016002000240028000

10152025

V DS (Volts)

C a p a c i t a n c e (p F )

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

Vds

Charge

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Vdd

Vds

Vgs

BV I Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

DSS

E = 1/2 LI Vdd

AR AR