SUP65P06-20中文资料
Document Number: 70289P-Channel 60-V (D-S), 175_C MOSFET
SUP65P06-20
SUB65P06-20
DRAIN connected to TAB
S
G
P-Channel MOSFET
TO-220AB
Top View G D S TO-263
S
G Top View D
Notes:
a.Package limited.
b.Duty cycle v 1%.
c.When mounted on 1” square PCB (FR-4 material).
d.See SOA curve for voltage derating.
For SPICE model information via the Worldwide Web: https://www.360docs.net/doc/c015093210.html,/www/product/spice.htm
Notes:
a.Pulse test; pulse width v300 m s, duty cycle v2%.
b.Guaranteed by design, not subject to production testing d.Independent of operating temperature.
Document Number: 70289
04
8
12
16
20
25
50
75
100
125
150
175
0.000
0.005
0.010
0.015
0.020
0.025
0.030
20
40
60
80
100
01000
2000
3000
4000
50006000
10
20
30
40
50
60
020
40
60
80
100
20
40
60
80
100
040
80
120
160
200
2
4
6
8
10
040
80
120
160200
2
4
6
8
10
Output Characteristics
Transfer Characteristics
Capacitance Gate Charge
Transconductance
On-Resistance vs. Drain Current
V DS – Drain-to-Source Voltage (V)
– D r a i n C u r r e n t (A )
I D V GS – Gate-to-Source Voltage (V)
– D r a i n C u r r e n t (A )
I D – G a t e -t o -S o u r c e V o l t a g e (V )
– O n -R e s i s t a n c e (Q g – Total Gate Charge (nC)
I D – Drain Current (A)
V DS – Drain-to-Source Voltage (V)C – C a p a c i t a n c e (p F )
r D S (o n )W )
V G S V GS – Gate-to-Source Voltage (V)
– T r a n s c o n d u c t a n c e (S )
g f s
–50
–25
25
50
75
100
125
150
175
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
(N o r m
a l i z e d )
– O n -R e s i s t a n c e (T J – Junction Temperature (_C)
V SD – Source-to-Drain Voltage (V)
r D S (o n )W )– S o u r c e C u r r e n t (A )
I S 100
101
0.3
0.6
0.9
1.2
1.5
0.3
Square Wave Pulse Duration (sec)
10–5
10–410–310–210–11N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c e
3
Safe Operating Area
vs. Case Temperature
– D r a i n C u r r e n t (A )
I D