ao8810规格书,mosfet规格书,双N管

Symbol

Typ Max 648389120R θJL 5370Maximum Junction-to-Lead C

Steady-State

°C/W

Thermal Characteristics Parameter

Units Maximum Junction-to-Ambient A t ≤ 10s R θJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W AO8810

Symbol

Min Typ

Max

Units BV DSS 20

V 1T J =55°C

5±1μA ±10

μA V GS(th)0.40.61V I D(ON)30

A 16.520T J =125°C

23282024m ?2432m ?g FS 29S V SD 0.76

1V I S

2.5

A C iss 1160

pF C oss 187pF C rss 146pF R g 1.5?Q g 16nC Q gs 0.8nC Q gd 3.8nC t D(on) 6.2ns t r 12.7ns t D(off)51.7ns t f 16ns t rr 17.7ns Q rr 6.7

nC

Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge

I F =7A, dI/dt=100A/μs

Drain-Source Breakdown Voltage On state drain current

I D =250μA, V GS =0V V GS =4.5V, V DS =5V V GS =4.5V, I D =7A

Reverse Transfer Capacitance I F =7A, dI/dt=100A/μs Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter

Conditions I DSS μA Gate Threshold Voltage V DS =V GS I D =250μA V DS =16V, V GS =0V

Zero Gate Voltage Drain Current I GSS Gate-Body leakage current V DS =0V, V GS =±4.5V R DS(ON)

Static Drain-Source On-Resistance

Forward Transconductance Diode Forward Voltage m ?V GS =2.5V, I D =5.5A I S =1A,V GS =0V V DS =5V, I D =7A V GS =1.8V, I D =5A

Turn-On Rise Time Turn-Off DelayTime V GS =5V, V DS =10V, R L =1.35?, R GEN =3?

Gate resistance V GS =0V, V DS =0V, f=1MHz

Turn-Off Fall Time SWITCHING PARAMETERS Total Gate Charge V GS =4.5V, V DS =10V, I D =7A

Gate Source Charge Turn-On DelayTime DYNAMIC PARAMETERS V GS =0V, V DS =10V, f=1MHz Gate Drain Charge V DS =0V, V GS =±8V Maximum Body-Diode Continuous Current

Input Capacitance Output Capacitance A: The value of R θJA is measured with the device mounted on 1in 2

FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 μs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2

FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating.