贴片三极管封装上的印字
贴片三极管封装上的印字，与真实名称的对照表印字器件名厂家类型封装器件用途及参数
T2 HSMS-286C HP D SOT323 dual series HSMS-286B
T2 HSMS-2862 HP D SOT23 dual series HSMS-286B
N PDTA114TU Phi t23 SOT323 pnp dtr R1 10k
PDTC114TU Phi N SOT323 npn dtr R1 10k t24
PMBT3906 t2A Phi N SOT23 2N3906
PMST3906 Phi N t2A SOT323 2N3906
PMBT2907 Phi N SOT23 2N2907
t2B
PMBTA92 t2D Phi N SOT23 MPSA92 pnp Vce 300V
PMSTA92 Phi t2D N SOT323 MPSA92 pnp Vce 300V
PMBTA93 Phi N SOT23 t2E MPSA93 pnp Vce 200V
PMSTA93 Phi N t2E SOT323 MPSA93 pnp Vce 200V
PMBT2907A t2F Phi N SOT23 2N2907A
PMBT2907A Phi N t2F SOT323 2N2907A
PMBTA56 Phi N SOT23 t2G MPSA56
PMSTA56 Phi N t2G SOT323 MPSA56
PMBTA55 t2H Phi N SOT23 MPSA55
PMSTA55 Phi t2H N SOT323 MPSA55
PMBT5401 Phi N SOT23 t2L 2N5401 pnp 150V
PMST5401 Phi N SOT323 2N5401 pnp 150V t2L
BCX18 T2p Phi N SOT23 BC328
PMBT4403 t2T Phi N SOT23 2N4403
PMST4403 Phi t2T N SOT323 2N4403
BCX18 Phi N T2t SOT23 BC328
PMBTA63 Phi N SOT23 t2U MPSA63 darlington
PMBTA* Phi H SOT23 MPSA* darlington t2V
PMBT4401 Phi t2X N SOT23 2N4401
PMST4401 t2X Phi N SOT323 2N4401
T3 BSS63 Phi N SOT23 BSS68
T3 HSMS-286E HP A SOT323 ca dual HSMS-286B
T3 HSMS-2863 HP A SOT23 ca dual HSMS-286B
t31 PDTA143XT Phi N SOT23 pnp dtr4k7+10k
PDTC143XT Phi t32 N SOT23 pnp dtr 4k7+10ks
2SC4182 Nec N SOT23 T32 npn RF fT @3V hfe 60-105
2SC4182 Nec T33 N SOT23 npn RF fT @3V hfe 85-150
2SC4182 T34 Nec N SOT23 npn RF fT @3V hfe 120-220
T4 BCX17R Phi R SOT23R BC327
T4 HSMS-286F HP B SOT323 cc dual HSMS-286B
T4 HSMS-28* HP B SOT23 cc dual HSMS-286B
dual UHF schottky diode
SOT363 DL Mot MBD330DW T4
npn RF fT 2GHz hfe 50-100
- N Nec 2SC3545P T42
T42 2SC4184 Nec N SOT323 npn RF hfe 40-80
Nec 2SC3545Q N - UHF osc/mix fT 2GHz hfe 70-140 T43 Nec N 2SC4184 T43 SOT323 npn hfe 60-120
Nec N T44 2SC3545R - npn RF fT 2GHz hfe 120-250
Nec N SOT323 T44 2SC4184 npn RF hfe 100-200
T5 HSMS-2865 HP S SOT143 separate dual HSMS-286B
T5 Phi R SOT23R BC328 BCX18R
T6 BSS63R R Phi SOT23R BSS68
T62 2SC3841P npn RF fT 4GHz hfe 40-80 Nec N SOT23
T62 2SC4186 Nec SOT323 npn RF fT 4GHz hfe 40-80 N N npn RF fT 4GHz hfe 60-120
Nec SOT23 T63 2SC3841Q
N npn RF fT 4GHz hfe 60-120 SOT323 T63 2SC4186 Nec N npn RF fT 4GHz hfe 100-200 Nec SOT23 T* 2SC3841R N SOT323 npn RF fT 4GHz hfe 100-200 2SC4186 Nec T* N 2N2907 SGS T7 BSR15 SOT23
2N2907
SGS R SOT23R T71 BSR15R
T72 2SC4568 N Nec SOT23 npn RF ft hfe 40-80
npn RF ft hfe 40-80 Nec T72 2SC4570 SOT323 N
SOT23 npn RF ft hfe 60-120 Nec N 2SC4568 T73
npn RF ft hfe 60-120 N 2SC4570 Nec SOT323 T73
N T74 2SC4568 SOT23 Nec npn RF ft hfe 100-200
SOT323 npn RF ft hfe 100-200 N T74 2SC4570 Nec
npn RF fT 5GHz hfe 40-80 N SOT23 Nec 2SC4569 T75
SOT323 npn RF fT 5GHz hfe 40-80 2SC4571 N Nec T75 T76 2SC4569 SOT23 npn RF fT 5GHz hfe 60-120 N Nec npn RF fT 5GHz hfe 60-120 T76 2SC4571 Nec N SOT323 Nec N 2SC4571 T76 SOT323 npn RF fT 5GHz hfe 100-200 npn RF fT 5GHz hfe 100-200 Nec N T77 2SC4569 SOT23 SOT343 Nec npn RF fT 25GHz 3V 10mA 2SC5507 T78 WQ Nec WQ SOT343 T79 2SC5508 npn RF fT 25GHz 3V 30mA Phi 2N2907 N SOT23 BSR15 T7p
Phi SOT23 2N2907
N BSR15 T7t
N SGS 2N2907A SOT23 BSR16 T8
WQ Nec SOT343 npn RF fT 17GHz 3V 90mA 2SC5507 T80
R SOT23R SGS BSR16R T81 2N2907A
SOT23 N 2SC4954 T82 Nec npn RF fT12GHz @3V 5mA
T82 2SC4956 npn RF fT 12GHz @3V 5mA SOT143 Nec WQ 2SC4958 T82 N Nec SOT323 npn RF fT 12GHz @3V 5mA T82 SOT343 WQ Nec npn RF fT 12GHz @3V 5mA 2SC5014 SOT23 Nec N 2SC4955 T83 npn RF fT 12GHz @3V 10mA npn RF fT 12GHz @3V 10mA 2SC4957 T83 Nec SOT143 WQ T83 Nec SOT323 N 2SC4959 npn RF fT 12GHz @3V 10mA Nec WQ 2SC5015 T83 SOT343 npn RF fT 12GHz @3V 10mA npn RF fT 13GHz @2V 7mA
SOT23 N Nec 2SC5177 T84
T84 2SC5179 Nec N SOT323 npn RF fT 13GHz @2V 7mA Nec 2SC5178 WQ SOT143 T84 npn RF fT 13GHz @2V 7mA Nec 2SC5180 WQ T84 SOT343 npn RF fT 13GHz @2V 7mA Nec N 2SC5182 T86 SOT23 npn RF fT 12GHz @2V 20mA Nec WQ 2SC5183 SOT143 npn RF fT 12GHz @2V 20mA T86 Nec T86 N 2SC5184 SOT323 npn RF fT 12GHz @2V 20mA Nec WQ 2SC5183 T86 SOT343 npn RF fT 12GHz @2V 20mA Nec N T88 SOT23 2SC5191 npn RF fT @3V 20mA
Nec WQ T88 SOT143 2SC5192 npn RF fT @3V 20mA
T88 2SC5193 Nec N SOT323 npn RF fT @3V 20mA
Nec npn RF fT @3V 20mA SOT343 WQ T88 2SC5193
T89 2SC5288 Nec npn RF SOT143 WQ
Phi SOT23 2N2907A N T8p BSR16
T8t BSR16 2N2907A
SOT23 N Phi
WQ npn RF SOT143 T90 2SC5289 Nec
N T92 SOT23 2N3904
BSR18A Fch
pnp RF fT SOT23 N Nec T92 2SA1977
2N3904 SOT23 N BSR18A Phi T92P
pnp RF fT
N T93 2SA1978 Nec SOT23
N npn RF fT 12V 60mA Nec SC59 TA 2SC5431EB
N TB 2SC5431FB Nec npn RF fT 12V 60mA SC59
N npn RF fT 12V 100mA SC59 TC 2SC5432EB Nec
N npn RF fT 12V 100mA SC59 Nec 2SC5432FB TD
N SC59 TE 2SC5433EB Nec npn RF fT 7GHz 10V 65mA
N npn RF fT 7GHz 10V 65mA SC59 TF 2SC5433FB Nec
switching diode SOT23 V BAL99 Mot TFX
PMBT5551 tG1 Phi N 2N5551 npn Vce 140V SOT23
2N5551 npn Vce 140V
SOT323 tG1 PMST5551 Phi N
N Nec 2SC5434EB TH npn RF fT 8GHz 10V 35mA SC59
N npn RF fT 8GHz 10V 35mA SC59 TJ 2SC5434FB Nec
N npn RF fT 12GHz 9V 30mA SC59 2SC5435EB TK Nec
N npn RF fT 12GHz 9V 30mA
SC59 TL 2SC5435FB Nec
N npn RF fT 14GHz 5V 30mA SC59 Nec 2SC5436EB TN N SC59 npn RF fT 14GHz 5V 30mA Nec 2SC5436FB TP N npn RF fT 9V 50mA SC59 Nec 2SC5437EB TS
npn RF fT 9V 50mA SC59 Nec 2SC5437FB TT N
N SC-70 Nec 2SC5599 TV npn RF fT 5GHz 5mA
N TV 2SC5600 Nec npn RF fT 5GHz 15mA
SC-59
TV RF jfet
SOT23 F Mot MMBF112L
SC-70 Nec 2SC5602 TW N npn RF fT 6V 5mA
SC-59 npn RF fT 6V 15mA N 2SC5603 TW Nec
SOD323 20-2pF varicap
I Sie BB545 U
N BC337
SOT23 Mot BCX19 U1
quad ring Si sw diodes
SOT143 BQ Sie BGX50A U1
U16 2SC4183 Nec N - npn RF 5V fT1GHz hFE 60-120 Nec 2SC4183 N - U17 npn RF 5V fT1GHz hFE 90-180 Nec N 2SC4183 U18 - npn RF 5V fT1GHz hFE 120-240 Nec UQ 3SK230A U1A SOT143 dg RF mosfet
Nec UQ 3SK230B SOT143 dg RF mosfet U1B
Nec U1C UQ SOT143 3SK231C dg RF mosfet
Nec UQ SOT143 3SK231D U1D dg RF mosfet
Nec UQ SOT143 U1E 3SK252E dg RF mosfet
Nec UQ U1E SOT343 dg RF mosfet 3SK254E
U1G 3SK253G Nec UQ SOT143 dg RF mosfet
dg RF mosfet
Nec UQ U1G 3SK255G SOT343
SOT23 BCX19 Phi BC337 N U1p
BC337 U1t BCX19 N Phi SOT23
N BC338
Phi SOT23 U2 BCX20
Nec N - U21 2SC4185 npn RF 10V hFE 40-80
npn RF 10V hFE 60-120 U22 2SC4185 Nec - N
npn RF 10V hFE 90-180 - Nec N U23 2SC4185
BC338
N BCX20 SOT23 Phi U2t
N U3 BSS* Phi SOT23 120V 0.25A
R Phi BC337 U4 BCX19R SOT23R
R BC338 SOT23R BCX20R Phi U5
U55 3SK134B dg mosfet UQ SOT143 Nec
UQ SOT343 3SK245 U55 dg mosfet Nec
dg mosfet Nec UQ U56 3SK134B SOT143
UQ SOT343 dg mosfet 3SK245 U56 Nec
R SOT23R 120V 0.25A
Phi BSS*R U6
U65 SOT143 Nec UQ 3SK135A dg mosfet
3SK135A U66 SOT143 Nec dg mosfet
UQ
N 2N2222
U7 BSR13 SGS SOT23
R BSR13R U71 SOT23R SGS 2N2222
SOT143 3SK177 U71 dg GaAsfet Idss 5-15mA Nec UQ 3SK299 U71 UQ Nec SOT343 dg GaAsfet Idss 5-15mA 3SK177 U72 SOT143 Nec dg GaAsfet Idss10-25mA UQ 3SK299 U72 UQ Nec SOT343 dg GaAsfet Idss 10-25mA 3SK177 U73 SOT143 dg GaAsfet Idss 20-35mA Nec UQ UQ Nec SOT343 3SK299 dg GaAsfet Idss 20-35mA U73 U74 SOT143 Nec UQ dg GaAsfet Idss 30-40mA 3SK177 dg GaAsfet Idss 30-40mA Nec SOT343 UQ 3SK299 U74 dg GaAsfet Idss 10-25mA Nec 3SK206 U76 SOT143 UQ Nec 3SK206 U77 dg GaAsfet Idss 20-35mA SOT143 UQ Nec dg GaAsfet Idss 30-50mA SOT143 3SK206 UQ U78 SOT143 UQ dg GaAsfet Idss 45-80mA 3SK206 U79 Nec 2N2222 BSR13 U7p SOT23 N Phi
2N2222
SOT23 N Phi BSR13 U7t
U8 BSR14 SGS N SOT23 2N2222A
U81 BSR14R SGS R SOT23R 2N2222A
3SK176A Nec UQ U87 SOT143 dg mosfet
3SK176A Nec UQ U88 SOT143 dg mosfet
Phi U8p N SOT23 2N2222A BSR14
BSR14 Phi N SOT23 2N2222A
U8t
dg mosfet U90 UQ SOT143 Nec 3SK223
dg mosfet UQ SOT343 Nec U90 3SK243
dg mosfet UQ U91 SOT143 Nec 3SK223
U91 3SK243 Nec UQ SOT143 dg mosfet
2N3904 Fch SOT23 U92 BSR17A N
SOT23 Phi 2N3904 BSR17A N U92p
dg mosfet U94 3SK224D Nec UQ SOT143
UQ dg mosfet Nec SOT343 U94 3SK244D
dg mosfet Nec 3SK224E U95 UQ SOT143
UQ U95 3SK244E SOT143 Nec dg mosfet
N pnp darlington comp 2SD1383K - Roh UB 2SB852K
H - Mot MSC2404-C npn RF 450MHz fT 20V UC
n-ch enh mosfet 500V 22mA Sil V01 VN50300T M -
- Sil n-ch enh mosfet 60V/0.18A V02 VN0605T M
Sil n-ch enh mosfet 450V 20mA M - VN45350T V04
N V1 npn RF fT 9GHz
Mot MRF959 SC75
dg VHF mosfet V11 3SK131 SOT143 Nec UQ
dg VHF mosfet UQ SOT343 V11 3SK242 Nec
dg VHF mosfet SOT143 UQ Nec 3SK131 V12
dg VHF mosfet UQ 3SK242 SOT343 Nec V12
V13 dg VHF mosfet
SOT143 3SK131 UQ Nec
V13 ZC932 SOT23 C Zet 5 - 17pF hyperabrupt varicap dg VHF mosfet V13 3SK242 SOT343 Nec UQ
Zet C ZC931 V14 4 hyperabrupt varicap SOT23
C Zet ZC930 V15 SOT23 3 - 9pF hyperabrupt varicap
25 - 95pF hyperabrupt varicap Zet ZC934 V16 C SOT23
C Zet ZC933 V17 12 - 42pF hyperabrupt varicap SOT23 SOT23 npn RF 5V BFT25 V1p Phi N
N BFQ67 V2 - Tfk npn RF fT GHz 50mA
dg VHF mosfet 3SK222 V21 UQ Nec SOT143
V21 3SK246 dg VHF mosfet SOT343 Nec UQ
UQ SOT143 dg VHF mosfet Nec 3SK222 V22
dg VHF mosfet
SOT343 Nec 3SK246 V22 UQ
X SOT143 BFG67 V3 Phi npn RF fT 8GHz 50mA
X BFG197 V5 SOT143 npn RF 100mA
Phi
V50 M p-ch enh mosfet -60V 120mA
- VP0610T Sil
H - MSC2295-B VB npn RF 150MHz fT 20V Mot
H npn RF 150MHz fT 20V
- Mot MSC2295-C VC
W0F TSDF1205RW Tfk WQ SOT343 12GHz npn 5mA 4V
BFP181TW Tfk X - W18 npn RF fT 10V 20mA
BFP181TRW Tfk WQ - W18 npn RF fT 10V 20mA
BFT92 Sie N W1s SOT23 BFQ51/BFQ76
BCR10PN Sie DP W1s SOT363 pnp/npn dig 0.1A 10k+10k W2 TSDF1220RW Tfk WQ SOT343 12GHz npn 6V 20mA
npn rf fT GHz 6V 8mA - S822TW Tfk W22 X
npn rf fT GHz 6V 8mA - S822TRW Tfk W22 WQ
npn rf fT 7 GHz 8V 10mA - BFP280TRW W28 Tfk WQ
npn rf fT 7 GHz 8V 10mA
- Tfk BFP280TW X W28
W3 Phi C SOT23 zener ±5% BZX84-C2V4
W4 BZX84-C2V7 Phi C SOT23 zener ±5%
W5 BZX84-C3V0 Phi C SOT23 zener ±5%
W52 S852TW Tfk X - npn rf fT GHz 6V 8mA
W6 BZX84-C3V3 Phi C SOT23 zener ±5%
npn rf fT GHz 10V 50mA
X W67 - BFP67W Tfk
W7 BZX84-C3V6 Phi C SOT23 zener ±5%
W8 BZX84-C3V9 Phi C SOT23 zener ±5%
W8 BZV49C3V9 Zet O SOT89 1W zener ±5%
W82 BFP182TRW Tfk WQ - npn rf fT GHz 10V 35mA
BFP182TW Tfk X - npn rf fT GHz 10V 35mA W82
BFP183TRW W83 Tfk WQ - npn rf fT GHz 10V 65mA
BFP183T Tfk X - npn rf fT GHz 10V 65mA
W83
W9 BZX84-C4V3 Phi C SOT23 zener ±5%
W9 BZV49C4V3 Zet O SOT89 1W zener ±5%
W92 BFP92AW Tfk X SOT343 npn rf fT 6 GHz 15V 30mA WB 2SD1383K Roh N - npn darlington comp 2SB852K
npn dig 50V 0.1A 10k+10k SOT23 BCR133 WCs Sie N npn dig 50V 0.1A 10k+10k SC75 Sie N BCR133T WCs
npn dig 50V 0.1A 10k+10k WCs SOT457 Sie N BCR133U npn dig 50V 0.1A 10k+10k N SOT323 WCs Sie BCR133W dual BCR133
SOT363 BCR133S WCs Sie DN
npn 50V 0.1A dig 22k +22k SOT23 BCR141 Sie N WDs npn 50V 0.1A dig 22k +22k WDs SC75 BCR141T Sie N npn 50V 0.1A dig 22k +22k Sie BCR141W WDs N SOT323 dual BCR141 DN SOT363 WDs BCR141S Sie
npn rf fT SOT-323 - Tfk BFS17W WE1 N
npn rf fT SOT-323
- BFS17AW Tfk N WE2
BCR148 Sie N SOT23 WEs npn 50V 0.1A dig 47k +47k BCR148T Sie N SC75 npn 50V 0.1A dig 47k +47k WEs BCR148U Sie N SOT457 npn 50V 0.1A dig 47k +47k WEs BCR148W Sie WEs N SOT323 npn 50V 0.1A dig 47k +47k BCR148S Sie DN SOT363 dual BCR148 WEs
12 GHz npn 5mA 4V
SOT343 X Tfk TSDF1205W WF0
WF2 TSDF1220W Tfk X SOT343 12GHz npn 6V 20mA
BFP93A Tfk X WFE SOT343 BFP93A (FE) in 6GHz npn BCR08PN Sie DP WFs SOT363 pnp/npn dig 0.1A 2k2+47k BCR112 Sie WFs N SOT23 npn dig 50V 0.1A 4k7+4k7
2SC4617贴片三极管 SOT-523三极管封装2SC4617参数
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors 2SC4617 TRANSISTOR (NPN) FEATURES z Low Cob:Cob=2.0pF(Typ) z Complement to 2SA1774 MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions M in T yp M ax U nit Collector-base breakdown voltage V (BR)CBO I C =50uA, I E = 0 60 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B =0 50 V Emitter-base breakdown voltage V (BR)EBO I E =50uA, I C =0 7 V Collector cut-off current I CBO V CB =60V, I E =0 0.1 μA Emitter cut-off current I EBO V EB =7V, I C =0 0.1 μA DC current gain h FE V CE =6V, I C = 1mA 120 560 Collector-emitter saturation voltage V CE(sat) I C =50mA, I B = 5mA 0.4 V Transition frequency f T V CE =12V, I C =2mA, f=100MHz 180 MHz Collector output capacitance C ob V CB =12V, I E =0, f=1MHz 3.5 pF CLASSIFICATION OF h FE Rank Q R S Range 120-270 180-390 270-560 Marking BQ BR BS A,May,2011
贴片三极管上的印字,与真实型号对照表
?? ? ?p ? ? W[W ?p μ ń -c? 3'7$ :83KL1627 SQS GWU 3'7& 783KL1627 QSQ GWU 5 N 3'7$ 783KL1627 SQS GWU 5 N 3'7& :83KL1627 QSQ GWU 3066 3KL1627 1 3066 3KL1627 1 6& 1HF &; 627 1SQ 5) I7 *+] *DOL 0&$=627 '& *+] 00,& DPS G% JDLQ 6& 1HF&; QSQ 5) I7 *+] %$ 3KL,62' 9+) 7XQHU EDQG VZLWFK GLRGH %67 3KL 0 Q FK PRVIHW 9 P$ 05) / 0RW ; 627 QSQ 5) 05) '7&& 7 5RK 1 9 P$ QSQ VZ N EDVH UHV *DOL 0&$=627 '& *+] 00,& DPS G% JDLQ %$7 :6LH,6&' %$7 VFKRWWN\ GLRGH 6& 1HF&; QSQ 5) I7 *+] G%# *+] *DOL 0&$=627 '& *+] 00,& DPS G% JDLQ '7& 7(5RK1(07 QSQ GWU 5 N 9 P$ '7& 78$5RK16& QSQ GWU 5 N 9 P$ '7& 7.$5RK16& QSQ GWU 5 N 9 P$ %$7 $6LH,62' 9 $ VZ VFKRWWN\ %$7 :6LH,6&' '7& 7&$ 5RK 1 627 QSQ GWU 5 N 9 P$ '7& 7( 5RK 1 (07 QSQ GWU 5 N 9 P$ '7& 78$ 5RK 1 6& QSQ GWU 5 N 9 P$ '7& 7.$ 5RK 1 6& QSQ GWU 5 N 9 P$ 05) / 0RW ; 627 SQS 5) 05) *DOL 0&$=627 '& *+] 00,& DPS G%P %% 6LH,6&' 9DULFDS S) 6673$' 6LO - 3$' S$ OHDNDJH GLRGH *DOL 0&$=627 '& *+] 00,& DPS G%P R S '7& 7( 5RK 1 (07 QSQ GWU 5 N 9 P$ '7& 78$ 5RK 1 6& QSQ GWU 5 N 9 P$ '7& 7.$ 5RK 1 6& QSQ GWU 5 N 9 P$ *DOL 0&$=627 '& *+] 00,& DPS G%P R S '7& 7( 5RK 1 (07 QSQ GWU 5 N 9 P$ '7& 78$ 5RK 1 6& QSQ GWU 5 N 9 P$ '7& 7.$ 5RK 1 6& QSQ GWU 5 N 9 P$ '7& 78$ 5RK 1 6& QSQ GWU 5 N 9 P$ '7& 7.$ 5RK 1 6& QSQ GWU 5 N 9 P$ %& 0RW1627 %& % 6673$' 6LO - 3$' S$ OHDNDJH GLRGH 05) /0RW;627 QSQ 5I *+] 05) 62 5 6*6 5 627 5 1 05) /0RW;627 QSQ 5) *+] 05) 081 ': 0RW'3627 QSQ SQS GWU N N 3'7$ (83KL1627 SQS GWU 081 ': 0RW'3627 QSQ SQS GWU N N '7$ (8$5KR16& SQS GWU N N 9 PD '7$ (.$5KR16& SQS GWU N N UHV 9 PD '7$ (8$5KR16& SQS GWU N N 9 PD '7$ (.$5KR16& SQS GWU N N 9 PD '7$ (&$5KR1627 SQS GWU N N 9 PD 0$ &6 $0 $&627 6FKRWWN\ 5) 9 P$ 081 ': 0RW'3627 QSQ SQS GWU N N %$7 56LH'4 4XDG 6FKRWWN\ FURVVRYHU ULQJ '7$ (8$5RK16& SQS GWU N N '7$ (.$5RK16& SQS GWU N N 081 ': 0RW'3627 QSQ SQS GWU N 5 '7$ (&$5RK1627 SQS GWU N N '7$ (8$5RK16& SQS GWU 9 P$ N N '7$ (.$5RK16& SQS GWU 9 P$ N N '7$ (&$5RK1627 SQS GWU 9 P$ N N 081 ': 0RW'3627 QSQ SQS GWU N 5 00%7 0RW1 1 081 ': 0RW'3627 QSQ SQS GWU N 5 '7$ (8$5RK16& SQS GWU 9 P$ N N '7$ (.$5RK16& SQS GWU 9 P$ N N %)3 77IN; QSQ 5I I7 *+] 9 P$ 3'7& =.3KL1627 QSQ GWU N N 3'7$ =.3KL1627 SQS GWU N N '7$ (8$5KR16& SQS GWU N N 9 PD '7$ (.$5KR16& SQS GWU N N 9 PD 6673$' 6LO - 3$' S$ OHDNDJH GLRGH
贴片三极管代码查找贴片,三极管资料及其封装
JX SOT23 BAV170 B dual cc Si diode low Ir JY SOT23 BAV199 dioda-2x JY SOT23 BAV199 D dual series Si diode lowIr JZ SOT23 BAW 156 JZ SOT23 BAW156 A dual ca Si diode low Ir K SCD80 BBY52-02W I UHF varicap 1.75-1.25pF K SOD323 BAT68-03W I BAT68 Schottky K SOT23 2SK211 JFET K SOT323 MRF917 N npn RF fT 6GHz K0 SOT23 HSMP-3830 C gp pin diode HP3830 K1 SOT23 BCW71 NPN K1 SOT23 BCW71 N BC107A K1 SOT23 HSMP-3831 K gp pin diode HP3830 K14 DTA114G N pnp sw 50V 100mA w. b-eres K15 DTA124G N pnp sw 50V 50mA w. b-e res K1p SOT23 BCW71 N BC107A K1t SOT23 BCW71 N BC107A K1X SOT23 KSC3265 NPN K2 SOT23 BCW72 NPN K2 SOT23 BCW72 N BC107B ZXT300 K2 SOT23 HSMP-3832 D dual HP3830 pin diode K24 DTC114G N npn sw 50V 100mA w. b-eres K25 DTA124G N pnp sw 50V 50mA w. b-e res K2p SOT23 BCW72 N BC107B ZXT300
印字16贴片三极管
A,Jun,2012 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT1616 TRANSISTOR (NPN) FEATURES z Audio frequency power amplifier z Medium speed switching MARKING:16· MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =10μA, I E =0 60 V Collector-emitter breakdown voltage V (BR)CEO I C =2mA, I B =0 50 V Emitter-base breakdown voltage V (BR)EBO I E =10μA, I C =0 6 V Collector cut-off current I CBO V CB = 60V, I E =0 100 nA Emitter cut-off current I EBO V EB =6V, I C =0 100 nA h FE(1) V CE =2V, I C =100mA 135 600 DC current gain h FE(2) V CE =2V, I C =1A 81 Collector-emitter saturation voltage V CE(sat) I C =1A, I B =50mA 0.3 V Collector-emitter saturation voltage V BE(sat) I C =1A, I B =50mA 1.2 V Base-emitter voltage V BE V CE =2V, I C =50mA 0.6 0.7 V Transition frequency f T V CE =2V,I C =100mA, f=100MHz 100 MHz Collector output capacitance C ob V CB =10V, I E =0, f=1MHz 19 pF CLASSIFICATION OF h FE(1) RANK Y G L RANGE 135~270 200~400 300~600 Symbol Parameter Value Unit V CBO Collector-Base Voltage 60 V V CEO Collector-Emitter Voltage 50 V V EBO Emitter-Base Voltage 6 V I C Collector Current 1 A P C Collector Power Dissipation 750 mW R ΘJA Thermal Resistance From Junction To Ambient 167 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55～+150℃ https://www.360docs.net/doc/eb5055022.html, 【南京南山半导体有限公司 — 长电贴片三极管选型资料】
贴片三极管上的印字与真实型号对照手册
贴片三极管上的印字与真实名称的对照表 印字器件厂商类型封装器件用途及参数 -28 PDTA114WU Phi N SOT323 pnp dtr -24 PDTC114TU Phi N SOT323 npn dtr R1 10k -23 PDTA114TU Phi N SOT323 pnp dtr R1 10k -20 PDTC114WU Phi N SOT323 npn dtr -6 PMSS3906 Phi N SOT323 2N3906 -4 PMSS3904 Phi N SOT323 2N3904 0 2SC3603 Nec CX SOT173 Npn RF fT 7GHz 1 Gali-1 MC AZ SOT89 DC-8GHz MMIC amp 12dB gain 1 2SC3587 Nec CX - npn RF fT10GHz 1 BA277 Phi I SOD523 VHF Tuner band switch diode 2 BST82 Phi M - n-ch mosfet 80V 175mA 2 MRF5711L Mot X SOT14 3 npn RF MRF571 2 DTCC114T Roh N - 50V 100mA npn sw + 10k base res 2 Gali-2 MC AZ SOT89 DC-8GHz MMIC amp 16dB gain 2 BAT62-02W Sie I SCD80 BAT16 schottky diode 2 2SC3604 Nec CX - npn RF fT8GHz 12dB@2GHz 3 Gali-3 MC AZ SOT89 DC-3GHz MMIC amp 22dB gain 3 DTC143TE Roh N EMT3 npn dtr R1 4k7 50V 100mA 3 DTC143TUA Roh N SC70 npn dtr R1 4k7 50V 100mA 3 DTC143TKA Roh N SC59 npn dtr R1 4k7 50V 100mA 3 BAT60A Sie I SOD323 10V 3A sw schottky 3 BAT62-02W Sie I SCD80 - 4 DTC114TCA Roh N SOT23 npn dtr R1 10k 50V 100mA 4 DTC114TE Roh N EMT3 npn dtr R1 10k 50V 100mA 4 DTC114TUA Roh N SC70 npn dtr R1 10k 50V 100mA 4 DTC114TKA Roh N SC59 npn dtr R1 10k 50V 100mA 4 MRF5211L Mot X SOT143 pnp RF MRF521 4 Gali-4 MC AZ SOT89 DC-4GHz MMIC amp 17. 5 dBm 4 BB664 Sie I SCD80 Varicap 42-2.5pF 5 SSTPAD5 Sil J - PAD-5 5pA leakage diode 5 Gali-4 MC AZ SOT89 DC-4GHz MMIC amp 18 dBm o/p 5 DTC124TE Roh N EMT3 npn dtr R1 22k 50V 100mA 5 DTC124TUA Roh N SC70 npn dtr R1 22k 50V 100mA 5 DTC124TKA Roh N SC59 npn dtr R1 22k 50V 100mA 6 Gali-6 MC AZ SOT89 DC-4GHz MMIC amp 115 dBm o/p 6 DTC144TE Roh N EMT3 npn dtr R1 47k 50V 100mA 6 DTC144TUA Roh N SC70 npn dtr R1 47k 50V 100mA 6 DTC144TKA Roh N SC59 npn dtr R1 47k 50V 100mA 9 DTC115TUA Roh N SC70 npn dtr R2 100k 50V 100mA 9 DTC115TKA Roh N SC59 npn dtr R2 100k 50V 100mA
三极管的封装形式
三极管的封装形式 是指三极管的外形参数，也就是安装半导体三极管用的外壳。材料方面，三极管的封装形式主要有金属、陶瓷和塑料形式；结构方面，三极管的封装为TO×××，×××表示三极管的外形；装配方式有通孔插装（通孔式）、表面安装（贴片式）和直接安装；引脚形状有长引线直插、短引线或无引线贴装等。常用三极管的封装形式有TO－92、TO－126、TO－3、TO－220TO等。 国产晶体管按原部标规定有近30种外形和几十种规格，其外形结构和规格分别用字母和数字表示，如TO－162、TO－92等。晶体管的外形及尺寸如图1所示。
图1 晶体管的外形及尺寸 1 封装 1.金属封装 （1）B型：B型分为B－1、B－2、…、B－6共6种规格，主要用于1W及1W以下的高频小功率晶体管，其中B－1、B－3型最为常用。引脚排列：管底面对自己，由管键起，按顺时针方向依次为E、B、C、D（接地极）。其封装外形如图2（a）所示。 （2）C型：引脚排列与B型相同，主要用于小功率。其封装外形如图2（b）所示。 （3）D型：外形结构与B型相同。引脚排列：管底面对自己，等腰三角形的底面朝下，按顺时针方向依次为E、B、C。其封装外形如图2（c）所示。 （4）E型：引脚排列与D型相同，封装外形如图3（d）所示。 （5）F型：该型分为F－0、F－1～F－4共5种规格，各规格外形相同而尺寸不同，主要用于低频大功率管封装，使用最多的是F－2型封装。引脚排列：管底面对自己，小等腰三角形的庵面朝下，左为E，右为B，两固定孔为C。其封装外形如图2（e）所示。¨ （6）G型：分为G－1～G－6共6种规格，主要用于低频大功率晶体管封装，使用最多的是G－3、G－4型。其中G－1、G－2为圆形引出线，G－3～G－6为扁形引出线。引脚排列：管底面对自己，等腰三角形的底面朝下，按顺时针方向依次为E、B、C。其封装外形如图2（f）所示。 2.塑料封装
二,三极管,IC印字对型号
贴片3个脚 C001 A06 M073 QFN-6封装 IC表面编码 CCQ 09K E7E0 AR982 SOT-143 61HL SOT-143 B83 4脚 10A10 22A15 F5H3 F5HE 222 SOT-23 MARK为ECIG,封装为SOT-23 BU1H SOT-323 39BBAE AO 4MQU，封装为SOT-23的IC B8SN7 SOT-23封装, 丝印:B8TX4 SOT-23封装, 丝印:W2H SOT-23封装, 丝印:ZTW SOT-23封装, 丝印:L231 SOT-23封装 ,丝印:EA2 SOT-23封装, 丝印:8F SOT-23封装 M762 SCD7 BE30C N611 10 8Z FJKB1 FJJK5 TFT 3H0015 BA7 sot-23封装的，上标是X1YV与他垂直是10，标有A1FV与他垂直是16的是什么管子 贴片二极管上写着ZE20J 贴片二极管CCD MZ 贴片二极管第一行03A 第2行F6 5D 贴片二极管ACX K7JA SOT-23
C251A 5V的稳压芯片，贴片封装,印字为8C032 NC SN 36W D.P S3 J7 P03B XP D:P 62Z A7 S3 KW 8C032 J7 27EI WC AFPL AFPL E601 E605 28C26 XB LY AP 2 ABNJ KS5R SOT23封装的丝印28G2G BAs87 BAs88 BAs89 W3W 贴片二极管封装是1206的丝印是T72是什么型号SOT－23的上面标有OOOI 贴片二极管标有16LE4 00BC，封装SOT-23 丝印Txw3F，这个x看不清，像0也像U，用x代替了与二极管上面写着D写或5.5 SOT-89的，上面丝印为：BD S2L 和 DD S3F 2314 贴片三极管印字76ee,8626 贴片三极管标HG18
贴片三极管封装上的印字,与真实名称的对照表
贴片三极管封装上的印字，与真实名称的对照表 印字器件名厂家类型封装器件用途及参数 T2 HSMS-286C HP D SOT323 dual series HSMS-286B T2 HSMS-2862 HP D SOT23 dual series HSMS-286B t23 PDTA114TU Phi N SOT323 pnp dtr R1 10k t24 PDTC114TU Phi N SOT323 npn dtr R1 10k t2A PMBT3906 Phi N SOT23 2N3906 t2A PMST3906 Phi N SOT323 2N3906 t2B PMBT2907 Phi N SOT23 2N2907 t2D PMBTA92 Phi N SOT23 MPSA92 pnp Vce 300V t2D PMSTA92 Phi N SOT323 MPSA92 pnp Vce 300V t2E PMBTA93 Phi N SOT23 MPSA93 pnp Vce 200V t2E PMSTA93 Phi N SOT323 MPSA93 pnp Vce 200V t2F PMBT2907A Phi N SOT23 2N2907A t2F PMBT2907A Phi N SOT323 2N2907A t2G PMBTA56 Phi N SOT23 MPSA56 t2G PMSTA56 Phi N SOT323 MPSA56 t2H PMBTA55 Phi N SOT23 MPSA55 t2H PMSTA55 Phi N SOT323 MPSA55 t2L PMBT5401 Phi N SOT23 2N5401 pnp 150V t2L PMST5401 Phi N SOT323 2N5401 pnp 150V T2p BCX18 Phi N SOT23 BC328 t2T PMBT4403 Phi N SOT23 2N4403 t2T PMST4403 Phi N SOT323 2N4403 T2t BCX18 Phi N SOT23 BC328 t2U PMBTA63 Phi N SOT23 MPSA63 darlington t2V PMBTA* Phi H SOT23 MPSA* darlington t2X PMBT4401 Phi N SOT23 2N4401 t2X PMST4401 Phi N SOT323 2N4401 T3 BSS63 Phi N SOT23 BSS68 T3 HSMS-286E HP A SOT323 ca dual HSMS-286B T3 HSMS-2863 HP A SOT23 ca dual HSMS-286B t31 PDTA143XT Phi N SOT23 pnp dtr4k7+10k t32 PDTC143XT Phi N SOT23 pnp dtr 4k7+10ks T32 2SC4182 Nec N SOT23 npn RF fT @3V hfe 60-105 T33 2SC4182 Nec N SOT23 npn RF fT @3V hfe 85-150 T34 2SC4182 Nec N SOT23 npn RF fT @3V hfe 120-220 T4 BCX17R Phi R SOT23R BC327 T4 HSMS-286F HP B SOT323 cc dual HSMS-286B T4 HSMS-28* HP B SOT23 cc dual HSMS-286B T4 MBD330DW Mot DL SOT363 dual UHF schottky diode T42 2SC3545P Nec N - npn RF fT 2GHz hfe 50-100
常见贴片二、三极管的封装
www.mccsemi .com PACKAGE OUTLINES Note: Drawings Are Not To Scale C DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A ----- .166 ----- 4.20 B ----- .079 ----- 2.00 ? C ----- .020 ----- 0.52 ? D 1.000 --- 25.40 --- DO-35 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .166 .205 4.10 5.20 B .080 .107 2.00 2.70 ? C .028 .034 .70 .90 ? D 1.000 --- 25.40 --- DO-41 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .166 .205 4.10 5.20 B .080 .107 2.00 2.70 ? C .021 .025 .53 .64 ? D 1.000 --- 25.40 --- A-405 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .230 .300 5.80 7.60 B .104 .140 2.60 3.60 ? C .026 .034 .70 .90 ? D 1.000 --- 25.40 --- DO-15 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A ----- .300 ----- 7.62 B ----- .107 ----- 2.72 ? C .018 .022 0.46 0.56 ? D 1.000 --- 25.40 --- DO-7 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A ----- .370 ----- 9.50 B ----- .250 ----- 6.40 ? C .048 .052 1.20 1.30 ? D 1.000 --- 25.40 --- DO-201AD
贴片三极管上的印字与真实名称的对照表2
贴片三极管上的印字，与真实名称的对照表2 印字器件厂商类型封装器件用途及参数 A MRF947 Mot N SOT323 npn RF 8 GHz A BA892 Sie I SCD80 35V 100mA pin A 1SS355 Roh I USM 100V 50mA sw A0 HSMS-2800 HP C SOT23 HP2800 schottky A0 HSMS-280B HP C SOT323 HP2800 schottky A03 V AM-03 MC AQ - modamp MAR 3 Similar A06 V AM-06 MC AQ - modamp MAR 6 Similar A07 V AM-07 MC AQ - modamp MAR 7 Similar A1 HSMS-2801 HP K - HP2800 schottky A1 BA W56W Phi A SOT323 dual ca BA W62 (1N4148) A1 BA W56 Phi A SOT23 dual ca BA W62 (1N4148) A1 BA W56 Phi A SOT23 dual ca BA W62 (1N4148) A11 MMBD1501A Fch C SOT23 180V 200mA diode A13 MMBD1503A Fch D SOT23 180V 200mA dual diode series A14 MMBD1504A Fch B SOT23 180V 200mA dual diode cc A15 MMBD1505A Fch A SOT23 180V 200mA dual diode ca A16 ZC934A Zet C SOT23 25-95pF hyperabrupt varicap A17 ZC933A Zet C SOT23 12-42pF hyperabrupt varicap A1p BA W56 Phi A SOT23 dual ca BA W62 (1N4148) A1s BAW56W Sie A SOT323 dual ca BAW62 (1N4148) A1s BAW56 Sie A SOT23 dual ca BAW62 (1N4148) A1s BAW56U Sie A SC74 dual ca BA W62 (1N4148) A1t BA W56T Phi A SOT416 dual ca BA W62 (1N4148) A1t BA W56S Phi SOT363 dual ca BAW62 (1N4148) A1X MBAW56 Mot A - ditto A2 HSMS-2802 HP D SOT23 dual HP2800 A2 HSMS-280C HP D SOT323 dual HP2800 A2 BA T18 Phi C SOT23 BA482 A2 MMBD2836 Mot A SOT23 dual ca sw diode 75V A2 CFY30 Sie CQ SOT143 n-ch GaAsfet 6 GHz A2 MBT3906DW1 Mot DO SOT363 dual 2N3906 A22 BAS21 Phi C SOD27 BA V21 A2s BA T18 Sie C SOT23 BA482 A2X MMBD2836 Mot A SOT23 dual ca sw 75V 100mA 15ns A3 BAP64-03 Phi I SOD323 3 GHz pin diode A3 HSMS-2803 HP D SOT23 HP2800 ser pair A3 MMBD1005 Mot A SOT23 dual ca Si diode low leakage A3 BAS16 Zet C - Si sw 75V 100mA A3 BA T17 Phi C SOT23 BA481 A3 MBT3906DW Mot N SOT363 dual 2N3906 A3p BA T17 Phi C SOT23 BA481 A3t BA T17 Phi C SOT23 BA481
MMBT2907AT贴片三极管 SOT-523三极管封装MMBT2907AT参数
A,Jan,2013 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT2907AT TRANSISTOR (PNP) FEATURES z Complementary to NPN Type (MMBT2222AT) z Small Package MARKING:2F MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-10μA, I E =0 -60 V Collector-emitter breakdown voltage V (BR)CEO I C =-10mA, I B =0 -60 V Emitter-base breakdown voltage V (BR)EBO I E =-10μA, I C =0 -5 V Collector cut-off current I CBO V CB =-50V, I E =0 -10 nA Emitter cut-off current I EBO V EB =-5V, I C =0 -10 nA h FE(1) V CE =-10V, I C =-0.1mA 75 h FE(2) V CE =-10V, I C =-1mA 100 h FE(3) V CE =-10V, I C =-10mA 100 h FE(4) V CE =-10V, I C =-150mA 100 300 DC current gain h FE(5) V CE =-10V, I C =-500mA 50 I C =-150mA, I B =-15mA -0.4 V Collector-emitter saturation voltage V CE(sat) I C =-500mA, I B =-50mA -1.6 V I C =-150mA, I B =-15mA -1.3 V Base-emitter saturation voltage V BE(sat) I C =-500mA, I B =-50mA -2.6 V Transition frequency f T V CE =-20V,I C =-50mA, f=100MHz 200 MHz Collector output capacitance C ob V CB =-10V, I E =0, f=1MHz 8 pF Emitter input capacitance C ib V EB =-2V, I C =0, f=1MHz 30 pF Delay time t d 10 ns Rise time t r V CC =-30V, I C =-150mA, I B1=-15mA 40 ns Storage time t s 225 ns Fall time t f V CC =-6V, I C =-150mA, I B1=I B2=-15mA 30 ns Symbol Parameter Value Unit V CBO Collector-Base Voltage -60 V V CEO Collector-Emitter Voltage -60 V V EBO Emitter-Base Voltage -5 V I C Collector Current -600 mA P C Collector Power Dissipation 150 mW R ΘJA Thermal Resistance From Junction To Ambient 833 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55～+150 ℃ 3. COLLECTOR
MMST4403贴片三极管 SOT-323三极管封装MMST4403规格参数
A,Oct,2010 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors MMST4403 TRANSISTOR (PNP) FEATURES ● Complementary To MMST4401 ● Small Surface Mount Package MARKING:K3T MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -40 V V EBO Emitter-Base Voltage -5 V I C Collector Current -600 mA P C Collector Power Dissipation 200 mW R ΘJA Thermal Resistance From Junction To Ambient 625 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-100μA, I E =0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA, I B =0 -40 V Emitter-base breakdown voltage V (BR)EBO I E =-100μA, I C =0 -5 V Collector cut-off current I CBO V CB =-35V, I E =0 -100 nA Collector cut-off current I CEO V CE =-35V, I B =0 -500 nA V CE =-1V, I C =-100μA 30 V CE =-1V, I C =-1mA 60 V CE =-1V, I C =-10mA 100 V CE =-2V, I C =-150mA 100 300 DC current gain h FE V CE =-2V, I C =-500mA 20 I C =-150mA, I B =-15mA -0.4 V Collector-emitter saturation voltage V CE(sat) I C =-500mA, I B =-50mA -0.75 V I C =-150mA, I B =-15mA -0.75 -0.95 V Base-emitter saturation voltage V BE(sat) I C =-500mA, I B =-50mA -1.3 V Transition frequency f T V CE =-10V,I C =-20mA , f=100MHz 200 MHz Collector output capacitance C ob V CB =-10V, I E =0, f=1MHz 8.5 pF https://www.360docs.net/doc/eb5055022.html, 【南京南山半导体有限公司 — 长电三极管选型资料】
BV4贴片三极管印字
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 TRANSISTOR (PNP) FEATURES z High DC current gain. h FE :200 TYP .(V CE =-1V,I C =-100mA) z Complimentary to 2SD596. MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage -30 V V CEO Collector-Emitter Voltage -25 V V EBO Emitter-Base Voltage -5 V I C Collector Current -Continuous -700 mA P D Total Device Dissipation 200 mW T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (T a =25 unless otherwise specified ) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-100μA,I E =0 -30 V Collector-emitter breakdown voltage V (BR)CEO I C = -1mA, I B =0 -25 V Emitter-base breakdown voltage V (BR)EBO I E = -100μA, I C =0 -5 V Collector cut-off current I CBO V CB =-30 V ,I E =0 -0.1 μA Emitter cut-off current I EBO V EB = -5V , I C =0 -0.1 μA h FE(1)* V CE = -1V,I C = -100mA 110 400 DC current gain h FE(2)* V CE =-1V,I C = -700mA 50 Collector-emitter saturation voltage V CE(sat) * I C =-700 mA, I B = -70mA -0.6 V Base-emitter voltage V BE * V CE =-6V, I C =-10mA -0.6 -0.7 V Transition frequency f T V CE = -6V,I C = -10mA 160 MHz Collector Output Capacitance C ob V CB =-6V,I E =0,f=1MH Z 17 pF * Pulse test : Pulse width ≤350μs,Duty Cycle ≤2%. CLASSIFICATION OF h FE (1) Marking BV1 BV2 BV3 BV4 BV5 Range 110-180 135-220 170-270 200-320 250-400 ℃ A,May,2011